LM5110-1MX

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LM5110-1MX

IC GATE DRVR LOW-SIDE 8SOIC

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  • Mfr。パート #LM5110-1MX
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仕様

Part Status Obsolete
DigiKey Programmable Not Verified
Driven Configuration Low-Side
Channel Type Independent
Number of Drivers 2
Gate Type MOSFET (N-Channel)
Voltage - Supply 3.5V ~ 14V
Logic Voltage - VIL, VIH 0.8V, 2.2V
Current - Peak Output (Source, Sink) 3A, 5A
Input Type Non-Inverting
Rise / Fall Time (Typ) 14ns, 12ns
Operating Temperature -40°C ~ 125°C (TJ)
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Base Product Number LM5110

概要

Description

The LM5110-1MX is a high-speed, dual, low-side gate driver designed for enhancing the performance of power MOSFETs and IGBTs in various switching applications. This device is part of Texas Instruments' LM5110 series, known for its ability to deliver large peak currents into capacitive loads, thereby reducing switching times and increasing efficiency in power conversion systems. The LM5110-1MX features independent input control for each channel, providing flexibility in driving each MOSFET separately.
Key specifications include a typical propagation delay of 25 ns, ensuring low latency in switching applications, and it can operate at frequencies up to several megahertz. The device operates over a wide supply voltage range, typically from 4.5 V to 14 V, making it suitable for a broad range of applications. Additionally, it is equipped with undervoltage lockout (UVLO) protection to prevent erratic operation when the supply voltage is too low.
The LM5110-1MX is packaged in a space-efficient, thermally enhanced package, facilitating its use in compact designs. It's used in applications such as DC-DC converters, motor control, and other power management systems where fast, efficient MOSFET switching is critical.

Features

The LM5110-1MX is a high-speed dual gate driver designed to drive MOSFETs and IGBTs. Key features include:
1. High-Speed Performance: Capable of driving large capacitive loads with high frequency due to its fast rise and fall times.
2. Dual Channels: Contains two independent channels, allowing it to drive two separate MOSFETs or IGBTs.
3. Drive Current: Offers strong drive capability with peak current up to 3 A, ensuring efficient switching of power devices.
4. Low Propagation Delay: Provides minimal delay between the input control signal and the output, enhancing system responsiveness.
5. Wide Operating Voltage Range: Supports a wide input voltage range from 4.5V to 14V, making it versatile for various applications.
6. TTL/CMOS Compatible Inputs: Can interface easily with digital control circuits.
7. Shoot-Through Protection: Integrates features to prevent simultaneous conduction of high-side and low-side transistors, reducing the risk of short circuits.
8. Thermal Shutdown: Includes protection against overheating, ensuring reliability.
These features make the LM5110-1MX suitable for applications in switching power supplies, DC-DC converters, and motor control systems.

Package

The LM5110-1MX is a high-speed dual gate driver IC typically available in a small outline package (SOIC-8). This package type provides a compact solution for driving MOSFETs and IGBTs, suitable for various high-speed switching applications.

Pinout

The LM5110-1MX is a high-speed dual MOSFET driver from Texas Instruments. It is specifically designed to drive both low-side and high-side N-channel MOSFETs. The device comes in an 8-pin SOIC (Small Outline Integrated Circuit) package.
Here's a brief overview of its pin configuration and functions:
1. INA: Input A - Controls the state of output A.
2. INB: Input B - Controls the state of output B.
3. VDD: Supply Voltage - Power supply input for the device.
4. GND: Ground - Ground reference for the device.
5. OUTA: Output A - Drives the gate of the MOSFET connected to channel A.
6. OUTB: Output B - Drives the gate of the MOSFET connected to channel B.
7. VDD: Connected to the power supply.
8. GND: Provides the ground connection for the device.
The LM5110-1MX is used to provide efficient, high-speed switching for MOSFET gates, making it suitable for applications like DC-DC converters and motor drivers. Its ability to quickly drive MOSFETs helps reduce switching losses, improving the overall efficiency of the system.

Manufacturer

The LM5110-1MX is manufactured by Texas Instruments, a global technology company renowned for its development and production of semiconductors and integrated circuits. Texas Instruments designs and produces a wide range of electronic components utilized in various electronic systems and devices across numerous industries, including automotive, consumer electronics, industrial, and communications. The company is known for its innovation and extensive portfolio of products that support advancements in technology, power management, and processing capabilities.

Application

The LM5110-1MX is a high-speed, dual gate driver designed for applications requiring efficient, fast switching of power devices, such as MOSFETs and IGBTs. Key application areas include DC-DC converters, synchronous rectification, motor drives, power inverters, and switched-mode power supplies (SMPS). Its ability to drive large capacitive loads with low propagation delay makes it suitable for high-frequency power conversion and efficient power management in various industrial and automotive systems.

Equivalent

The LM5110-1MX is a high-speed MOSFET driver. Equivalent products include the TC4420 by Microchip, the FAN3111 by ON Semiconductor, and the MIC4420 by Microchip. These alternatives offer similar functionality with variations in speed, voltage range, and packaging, so it's important to verify compatibility with your specific application requirements.

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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