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LM5109BMAX
IC GATE DRVR HALF-BRIDGE 8SOIC
- メーカー
- Mfr。パート #LM5109BMAX
- パッケージ SOIC-Narrow-8
- データシート
- 在庫中7566
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Obsolete |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | N-Channel MOSFET |
| Voltage-Supply | 8V ~ 14V |
| LogicVoltage-VILVIH | 0.8V, 2.2V |
| Current-PeakOutput(SourceSink) | 1A, 1A |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 108 V |
| Rise/FallTime(Typ) | 15ns, 15ns |
| OperatingTemperature | -40°C ~ 125°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概要
Description
The LM5109BMAX is a high-voltage gate driver designed for driving N-channel MOSFETs in a half-bridge configuration. It is commonly used in various applications such as motor drives, power supplies, and DC-DC converters. This device is part of Texas Instruments' LM5109 series and is known for its robust features and reliability.
Key features of the LM5109BMAX include a fast switching capability with a typical 35 ns propagation delay, a high-side floating driver that can handle voltages up to 100V, and a low-side driver. It operates with a supply voltage range of 9V to 14V. The device includes under-voltage lockout protection for both high-side and low-side channels to ensure safe operation under abnormal conditions.
The LM5109BMAX also has a bootstrap diode integrated within the IC, simplifying the design and reducing the number of external components needed. Additionally, it features a small footprint, making it suitable for compact circuit designs. Overall, the LM5109BMAX is a versatile and efficient solution for high-performance switching applications.
Key features of the LM5109BMAX include a fast switching capability with a typical 35 ns propagation delay, a high-side floating driver that can handle voltages up to 100V, and a low-side driver. It operates with a supply voltage range of 9V to 14V. The device includes under-voltage lockout protection for both high-side and low-side channels to ensure safe operation under abnormal conditions.
The LM5109BMAX also has a bootstrap diode integrated within the IC, simplifying the design and reducing the number of external components needed. Additionally, it features a small footprint, making it suitable for compact circuit designs. Overall, the LM5109BMAX is a versatile and efficient solution for high-performance switching applications.
Features
The LM5109B is a high-voltage gate driver designed for driving N-channel MOSFETs in a half-bridge configuration. Key features include:
1. High Voltage Capability: It can handle supply voltages up to 100V, making it suitable for high-voltage applications.
2. Bootstrap Operation: The device supports bootstrap operation for the high-side driver, allowing for efficient high-side switching.
3. Fast Switching: Offers fast rise and fall times, enhancing the switching performance of the MOSFETs it drives.
4. Low Propagation Delay: Features a low propagation delay of about 35 ns, ensuring quick response times in switching applications.
5. Under-Voltage Lockout (UVLO): Provides UVLO protection for both high-side and low-side drivers to prevent operation under insufficient supply voltage conditions.
6. Wide Temperature Range: The device operates over a wide temperature range, suitable for demanding environments.
7. Robust Design: It includes both high-side and low-side drivers, with a maximum drive current capability of 3A.
8. Package Options: Available in compact package options like the SOIC, supporting space-constrained designs.
The LM5109B is ideal for applications like synchronous rectification, DC-DC converters, and motor drive systems, where reliable and efficient MOSFET driving is crucial.
1. High Voltage Capability: It can handle supply voltages up to 100V, making it suitable for high-voltage applications.
2. Bootstrap Operation: The device supports bootstrap operation for the high-side driver, allowing for efficient high-side switching.
3. Fast Switching: Offers fast rise and fall times, enhancing the switching performance of the MOSFETs it drives.
4. Low Propagation Delay: Features a low propagation delay of about 35 ns, ensuring quick response times in switching applications.
5. Under-Voltage Lockout (UVLO): Provides UVLO protection for both high-side and low-side drivers to prevent operation under insufficient supply voltage conditions.
6. Wide Temperature Range: The device operates over a wide temperature range, suitable for demanding environments.
7. Robust Design: It includes both high-side and low-side drivers, with a maximum drive current capability of 3A.
8. Package Options: Available in compact package options like the SOIC, supporting space-constrained designs.
The LM5109B is ideal for applications like synchronous rectification, DC-DC converters, and motor drive systems, where reliable and efficient MOSFET driving is crucial.
Package
The LM5109BMAX is available in a SOIC (Small Outline Integrated Circuit) package.
Pinout
The LM5109B is a high-voltage gate driver integrated circuit used for driving N-channel MOSFETs in a half-bridge configuration. The exact part number you mentioned, LM5109BMAX, typically refers to the packaging and ordering code. The LM5109B itself is generally presented in an 8-pin package. Here's a concise overview of the pin functions:
1. VDD: Supply voltage input for the low-side driver and logic circuitry.
2. HB: High-side driver bootstrap voltage input.
3. HO: High-side gate driver output.
4. HS: High-side source connection, typically connected to the source of the high-side MOSFET.
5. HI: High-side driver input.
6. LI: Low-side driver input.
7. LO: Low-side gate driver output.
8. VSS: Ground reference for the IC.
These pins are configured to control the high- and low-side MOSFETs in switching power supply applications or motor control applications, among others. The bootstrap circuitry using the HB and HS pins facilitates the driving of the high-side MOSFET.
1. VDD: Supply voltage input for the low-side driver and logic circuitry.
2. HB: High-side driver bootstrap voltage input.
3. HO: High-side gate driver output.
4. HS: High-side source connection, typically connected to the source of the high-side MOSFET.
5. HI: High-side driver input.
6. LI: Low-side driver input.
7. LO: Low-side gate driver output.
8. VSS: Ground reference for the IC.
These pins are configured to control the high- and low-side MOSFETs in switching power supply applications or motor control applications, among others. The bootstrap circuitry using the HB and HS pins facilitates the driving of the high-side MOSFET.
Manufacturer
The LM5109BMAX is manufactured by Texas Instruments. Texas Instruments (TI) is a global semiconductor company that designs and produces a wide range of electronic components. TI is known for its innovation in analog and embedded processing products. The company serves various industries, including automotive, industrial, personal electronics, communications equipment, and enterprise systems. TI focuses on developing technologies that improve performance and efficiency in electronic devices, and it plays a significant role in the semiconductor industry.
Application
The LM5109BMAX is a high-voltage gate driver designed for applications requiring efficient switching of MOSFETs and IGBTs. Key application areas include switched-mode power supplies (SMPS), motor drives, DC-DC converters, and Class D audio amplifiers. Its ability to drive high-side and low-side N-channel MOSFETs makes it suitable for synchronous rectification, induction heating, uninterruptible power supplies (UPS), and various industrial power systems.
Equivalent
The LM5109BMAX is a high-voltage gate driver IC. Equivalent products include the IRS2110, MIC4427, FAN7392, and UCC27714. These alternatives offer similar high-side and low-side gate drive capabilities for MOSFETs and IGBTs. However, always verify specific requirements like voltage range, switching frequency, and package compatibility when selecting an equivalent.
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