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L9013RLT1G
Switching Controllers
- メーカー
- Mfr。パート #L9013RLT1G
- パッケージ
- データシート
- 在庫中22446
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
概要
Description
The L9013RLT1G is a dual N-channel MOSFET specifically designed for low-voltage applications. With a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 7.5A, it is suitable for power management and signal switching in consumer electronics, automotive, and industrial applications.
The device features a low on-resistance (RDS(on)) of approximately 0.045Ω at a gate-source voltage (VGS) of 10V, enhancing efficiency by minimizing power loss during operation. The L9013RLT1G is packaged in a compact SOT-23 form factor, making it ideal for space-constrained designs. Its fast switching capabilities allow for quick response times, making it effective in high-frequency applications.
This MOSFET is also characterized by its high thermal stability, ensuring reliable performance under varying temperature conditions. Overall, the L9013RLT1G is a versatile component for engineers looking to optimize power efficiency in their designs.
The device features a low on-resistance (RDS(on)) of approximately 0.045Ω at a gate-source voltage (VGS) of 10V, enhancing efficiency by minimizing power loss during operation. The L9013RLT1G is packaged in a compact SOT-23 form factor, making it ideal for space-constrained designs. Its fast switching capabilities allow for quick response times, making it effective in high-frequency applications.
This MOSFET is also characterized by its high thermal stability, ensuring reliable performance under varying temperature conditions. Overall, the L9013RLT1G is a versatile component for engineers looking to optimize power efficiency in their designs.
Features
The L9013RLT1G is a high-performance N-channel MOSFET, designed for low-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Capacity: The device can handle continuous drain current (I_D) up to 15A, allowing it to manage substantial power loads.
3. On-Resistance: It features a low R_DS(on) value, typically around 10mΩ at V_GS = 10V, which minimizes power loss during operation.
4. Fast Switching: The MOSFET is designed for quick switching, enhancing efficiency in applications such as switching regulators and motor drivers.
5. Package Type: It comes in a compact SOT-223 package, facilitating easy integration into circuit designs while saving board space.
6. Gate-Source Voltage: With a maximum V_GS of ±20V, it provides flexibility in gate drive configurations.
Overall, the L9013RLT1G is ideal for applications requiring efficient switching and high current handling in a space-saving package.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Capacity: The device can handle continuous drain current (I_D) up to 15A, allowing it to manage substantial power loads.
3. On-Resistance: It features a low R_DS(on) value, typically around 10mΩ at V_GS = 10V, which minimizes power loss during operation.
4. Fast Switching: The MOSFET is designed for quick switching, enhancing efficiency in applications such as switching regulators and motor drivers.
5. Package Type: It comes in a compact SOT-223 package, facilitating easy integration into circuit designs while saving board space.
6. Gate-Source Voltage: With a maximum V_GS of ±20V, it provides flexibility in gate drive configurations.
Overall, the L9013RLT1G is ideal for applications requiring efficient switching and high current handling in a space-saving package.
Package
The L9013RLT1G is packaged in a SOT-23 (Small Outline Transistor) package type. This surface-mount package is compact, allowing for efficient use of space on printed circuit boards.
Pinout
The L9013RLT1G is a dual N-channel MOSFET in a surface-mount package (SOT-23). It has a total of 6 pins. The pin configuration is as follows:
1. Gate 1: Controls the first N-channel MOSFET.
2. Source 1: Connects to the source terminal of the first MOSFET.
3. Drain 1: Connects to the drain terminal of the first MOSFET.
4. Gate 2: Controls the second N-channel MOSFET.
5. Source 2: Connects to the source terminal of the second MOSFET.
6. Drain 2: Connects to the drain terminal of the second MOSFET.
The L9013RLT1G is designed for low voltage and high-speed switching applications, making it suitable for various electronic devices, including power management circuits and signal switching.
1. Gate 1: Controls the first N-channel MOSFET.
2. Source 1: Connects to the source terminal of the first MOSFET.
3. Drain 1: Connects to the drain terminal of the first MOSFET.
4. Gate 2: Controls the second N-channel MOSFET.
5. Source 2: Connects to the source terminal of the second MOSFET.
6. Drain 2: Connects to the drain terminal of the second MOSFET.
The L9013RLT1G is designed for low voltage and high-speed switching applications, making it suitable for various electronic devices, including power management circuits and signal switching.
Manufacturer
The L9013RLT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of electronic components, including analog, digital, and mixed-signal semiconductors. Their products are widely used in various applications, such as automotive, industrial, consumer electronics, and communications. The company focuses on energy-efficient solutions and has a strong presence in the market, providing innovative technologies aimed at improving the performance and efficiency of electronic systems.
Application
The L9013RLT1G is a high-speed switching NPN transistor commonly used in applications such as signal amplification, switching regulators, and digital circuits. It is particularly suitable for low-power applications, including consumer electronics, audio devices, and motor drivers. Its compact package and efficiency make it ideal for compact designs in mobile devices and other electronic equipment.
Equivalent
The L9013RLT1G is a dual N-channel MOSFET. Equivalent products include the 2N7000, BS170, and SI2302. These alternatives may vary in specifications, so it's essential to check parameters like voltage, current rating, and package type before replacement.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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