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L6393DTR
IC GATE DRVR HALF-BRIDGE 14SO
- メーカー
- Mfr。パート #L6393DTR
- パッケージ SOP-14
- データシート L6393DTR DataSheet
- 在庫中5503
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Synchronous |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VILVIH | 1.1V, 1.9V |
| Current-PeakOutput(SourceSink) | 290mA, 430mA |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 75ns, 35ns |
| OperatingTemperature | -40°C ~ 125°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 14-SOIC (0.154, 3.90mm Width) |
概要
Description
"L6393DTR" does not appear to correspond to a recognized term, concept, or specific topic outside of possibly being a code or title from a specialized context such as a course, document, project, or product. Without additional context or information, it is challenging to provide a precise introduction. If "L6393DTR" relates to a course or technical subject, it could involve a specialized area in fields like technology, science, or academia. For a more accurate and helpful response, please provide further details or context surrounding "L6393DTR."
Features
The L6393DTR is a high-voltage gate driver IC designed primarily for driving IGBTs and power MOSFETs. Key features include:
1. High Voltage Capability: It can handle high voltages up to 600V, making it suitable for industrial and consumer applications.
2. Integrated Bootstrap Diode: This feature simplifies the design and reduces the number of external components required.
3. Undervoltage Lockout (UVLO): Ensures stable operation by preventing the driver from operating if supply voltages are below safe levels.
4. CMOS/TTL Compatible Inputs: Enables easy interfacing with microcontrollers and digital signal processors.
5. Low Propagation Delay: Ensures efficient switching and reduced power loss.
6. High Current Drive Capability: Provides robust drive to power devices, enhancing system reliability.
7. Protection Features: Includes features such as dV/dt immunity and negative VS transient immunity for improved reliability.
8. 2A Sink/Source Current: Capable of driving large MOSFETs and IGBTs effectively.
These features make the L6393DTR suitable for motor control, lighting applications, and power conversion systems.
1. High Voltage Capability: It can handle high voltages up to 600V, making it suitable for industrial and consumer applications.
2. Integrated Bootstrap Diode: This feature simplifies the design and reduces the number of external components required.
3. Undervoltage Lockout (UVLO): Ensures stable operation by preventing the driver from operating if supply voltages are below safe levels.
4. CMOS/TTL Compatible Inputs: Enables easy interfacing with microcontrollers and digital signal processors.
5. Low Propagation Delay: Ensures efficient switching and reduced power loss.
6. High Current Drive Capability: Provides robust drive to power devices, enhancing system reliability.
7. Protection Features: Includes features such as dV/dt immunity and negative VS transient immunity for improved reliability.
8. 2A Sink/Source Current: Capable of driving large MOSFETs and IGBTs effectively.
These features make the L6393DTR suitable for motor control, lighting applications, and power conversion systems.
Package
The L6393DTR is provided in a SO-8 package type. This package is a small outline integrated circuit with eight pins, commonly used for surface mounting in electronic devices.
Pinout
The L6393DTR is a high-voltage half-bridge gate driver IC commonly used for driving MOSFETs or IGBTs in a bridge configuration. It typically comes in a SO-8 package and has 8 pins. Here is a brief overview of the pin functions:
1. VCC: Supply voltage for the low-side section.
2. GND: Common ground for both low-side and logic sections.
3. IN: Logic input for controlling the high-side and low-side outputs.
4. BOOT: High-side bootstrap supply.
5. VS: High-side floating supply return.
6. HO: High-side output for driving the gate of the high-side MOSFET/IGBT.
7. LO: Low-side output for driving the gate of the low-side MOSFET/IGBT.
8. VBOOT: Bootstrap supply voltage for high-side driver.
The L6393DTR is designed to drive high-side and low-side switches with complementary PWM signals, and it includes built-in features for protection and dead-time management.
1. VCC: Supply voltage for the low-side section.
2. GND: Common ground for both low-side and logic sections.
3. IN: Logic input for controlling the high-side and low-side outputs.
4. BOOT: High-side bootstrap supply.
5. VS: High-side floating supply return.
6. HO: High-side output for driving the gate of the high-side MOSFET/IGBT.
7. LO: Low-side output for driving the gate of the low-side MOSFET/IGBT.
8. VBOOT: Bootstrap supply voltage for high-side driver.
The L6393DTR is designed to drive high-side and low-side switches with complementary PWM signals, and it includes built-in features for protection and dead-time management.
Manufacturer
The L6393DTR is manufactured by STMicroelectronics. STMicroelectronics is a global semiconductor company that designs, develops, manufactures, and markets a broad range of semiconductor products and solutions. They provide microchips for various applications, including automotive, industrial, personal electronics, and communication equipment. The company is known for its innovation in integrated circuits and has a significant presence in the technology and electronics industry.
Application
The L6393DTR is a high-voltage half-bridge gate driver IC commonly used in applications like motor control, power supply units, induction heating, lighting, and other industrial automation systems. It provides efficient and reliable gate driving for MOSFETs or IGBTs, making it suitable for use in various industrial and consumer electronics where precise control of high-power components is essential.
Equivalent
The L6393DTR is a high-voltage half-bridge gate driver IC. Equivalent products include:
1. IRS2183 by Infineon Technologies.
2. FAN7380 by ON Semiconductor.
3. IR2304 by Infineon Technologies.
4. MIC4100 by Microchip Technology.
These alternatives offer similar functionality, but ensure to check the datasheets for compatibility with specific circuit requirements.
1. IRS2183 by Infineon Technologies.
2. FAN7380 by ON Semiconductor.
3. IR2304 by Infineon Technologies.
4. MIC4100 by Microchip Technology.
These alternatives offer similar functionality, but ensure to check the datasheets for compatibility with specific circuit requirements.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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2. クレジット・デビットカード
3. ワイヤー 転送
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