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K4B4G0846E-BCNB
4Gbit 1.5V DDR3 SDRAM FBGA-78 Memory (ICs) RoHS
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- Mfr。パート #K4B4G0846E-BCNB
- パッケージ
- データシート
- 在庫中22444
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Packaging | FBGA-78 |
| Memory Format | DDR3 SDRAM |
| Memory Size | 4Gbit |
| Operating temperature | 0℃~+85℃ |
| Voltage - Supply | 1.5V |
概要
Description
K4B4G0846E-BCNB is a type of NAND Flash memory chip produced by Samsung. Specifically, it is a 4 gigabit (Gb) device that typically utilizes a multi-level cell (MLC) architecture. This chip is designed for use in various applications, including smartphones, tablets, and other consumer electronics, providing efficient data storage solutions with high read and write speeds. The "BCNB" suffix generally indicates specific features or configurations, such as temperature range or packaging type.
In terms of performance, this memory chip offers reliable endurance and is often utilized in environments requiring fast data access and high storage capacity. Its compatibility with various interfaces makes it a versatile choice for manufacturers looking to integrate NAND Flash memory into their products. Overall, K4B4G0846E-BCNB plays a critical role in enhancing the performance and efficiency of electronic devices.
In terms of performance, this memory chip offers reliable endurance and is often utilized in environments requiring fast data access and high storage capacity. Its compatibility with various interfaces makes it a versatile choice for manufacturers looking to integrate NAND Flash memory into their products. Overall, K4B4G0846E-BCNB plays a critical role in enhancing the performance and efficiency of electronic devices.
Features
The K4B4G0846E-BCNB is a DRAM memory chip produced by Samsung, commonly used in mobile devices. Here are its key features:
1. Type: It is a low-power DDR (LPDDR) DRAM, designed for mobile applications.
2. Capacity: The chip offers a density of 4 Gb (gigabits), making it suitable for smartphones and tablets.
3. Data Rate: It supports high data rates, enhancing performance for multitasking and graphics-intensive applications.
4. Voltage: Operates at a low voltage, which helps in power efficiency and extends battery life.
5. Package: Typically comes in a compact package, contributing to smaller device form factors.
6. Technology: Utilizes advanced manufacturing processes for improved reliability and speed.
This combination of features makes the K4B4G0846E-BCNB ideal for high-performance mobile computing while maintaining energy efficiency.
1. Type: It is a low-power DDR (LPDDR) DRAM, designed for mobile applications.
2. Capacity: The chip offers a density of 4 Gb (gigabits), making it suitable for smartphones and tablets.
3. Data Rate: It supports high data rates, enhancing performance for multitasking and graphics-intensive applications.
4. Voltage: Operates at a low voltage, which helps in power efficiency and extends battery life.
5. Package: Typically comes in a compact package, contributing to smaller device form factors.
6. Technology: Utilizes advanced manufacturing processes for improved reliability and speed.
This combination of features makes the K4B4G0846E-BCNB ideal for high-performance mobile computing while maintaining energy efficiency.
Package
The K4B4G0846E-BCNB is a DRAM memory device packaged in a 78-ball FBG (Fine Pitch Ball Grid Array) format, which is suitable for mobile applications. This packaging allows for efficient heat dissipation and compact integration in various electronic devices.
Pinout
The K4B4G0846E-BCNB is a 4Gb DDR4 SDRAM memory chip manufactured by Samsung. It features a pin count of 96 balls in a BGA (Ball Grid Array) package. The primary functions of this chip include providing high-speed data storage and retrieval for various applications, including smartphones, tablets, and other computing devices. It operates at a voltage of 1.2V and supports data rates up to 2400 MT/s. The chip is designed for use in systems that require efficient memory solutions, offering low power consumption and high performance.
Manufacturer
The manufacturer of the K4B4G0846E-BCNB is Samsung Electronics. Samsung is a South Korean multinational conglomerate that operates in various sectors, including consumer electronics, information technology, telecommunications, and semiconductor manufacturing. The company is one of the largest producers of memory chips globally, including DRAM and NAND flash memory. Samsung Electronics is renowned for its innovation and high-quality products in the electronics market, making it a key player in the global technology landscape.
Application
The K4B4G0846E-BCNB is a mobile DRAM (Dynamic Random-Access Memory) chip primarily used in applications such as smartphones, tablets, and other portable devices. It supports high-performance computing needs and is suitable for gaming, multimedia processing, and data-intensive tasks. Additionally, it can be utilized in laptops and compact computing devices where efficient power consumption and high speed are essential.
Equivalent
The K4B4G0846E-BCNB chip is a 4 Gb DDR3 SDRAM memory chip. Equivalent products include:
1. MT41K256M16HA-125 (Micron)
2. H5TQ4G83EFR-PBA (SK Hynix)
3. IS43TR16640B-125B (ISSI)
Ensure to check specifications for compatibility, as variations in timing and packaging may exist.
1. MT41K256M16HA-125 (Micron)
2. H5TQ4G83EFR-PBA (SK Hynix)
3. IS43TR16640B-125B (ISSI)
Ensure to check specifications for compatibility, as variations in timing and packaging may exist.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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