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K4A8G085WB-BIRC
FBGA-78 Memory (ICs) RoHS
- メーカー
- Mfr。パート #K4A8G085WB-BIRC
- パッケージ
- データシート K4A8G085WB-BIRC DataSheet
- 在庫中16991
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
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仕様
| Packaging | FBGA-78 |
概要
Description
The K4A8G085WB-BIRC is a 1Gb DDR3 DRAM (Dynamic Random Access Memory) chip manufactured by Samsung. It features a 64-bit data bus and operates at a speed of 800 MT/s (mega-transfers per second), making it suitable for a variety of applications, including consumer electronics, computers, and industrial devices. This memory chip is designed for power efficiency, with a typical operating voltage of 1.5V, which helps reduce energy consumption in devices.
The BIRC in the part number typically indicates a specific package type or design variant, which can influence thermal performance and layout considerations in circuit design. DDR3 memory is widely used due to its balance of speed and cost-effectiveness, and it supports various memory controller architectures. Overall, the K4A8G085WB-BIRC is a reliable choice for systems requiring solid performance and efficiency in memory operations.
The BIRC in the part number typically indicates a specific package type or design variant, which can influence thermal performance and layout considerations in circuit design. DDR3 memory is widely used due to its balance of speed and cost-effectiveness, and it supports various memory controller architectures. Overall, the K4A8G085WB-BIRC is a reliable choice for systems requiring solid performance and efficiency in memory operations.
Features
The K4A8G085WB-BIRC is a 16Gb DDR4 SDRAM memory chip designed for high-performance applications. Key features include:
1. Density: 16 gigabits (2 GB) per die.
2. Data Rate: Supports data rates of up to 2400 MT/s.
3. Operating Voltage: Operates at a voltage of 1.2V, which enhances power efficiency.
4. Package: Available in a compact 78-ball TFBGA package, facilitating space-saving designs.
5. Timing: Standard CAS latency of 15 (CL15), ensuring efficient data access.
6. Architecture: Utilizes a x8 organization, making it suitable for various memory architectures.
7. Temperature Range: Designed to operate within a wide temperature range, suitable for various environments.
8. Features: Includes built-in features like write leveling, on-die termination, and self-refresh capabilities for enhanced performance and reliability.
This memory chip is ideal for use in applications such as mobile devices, laptops, and other consumer electronics demanding high-speed and efficient memory solutions.
1. Density: 16 gigabits (2 GB) per die.
2. Data Rate: Supports data rates of up to 2400 MT/s.
3. Operating Voltage: Operates at a voltage of 1.2V, which enhances power efficiency.
4. Package: Available in a compact 78-ball TFBGA package, facilitating space-saving designs.
5. Timing: Standard CAS latency of 15 (CL15), ensuring efficient data access.
6. Architecture: Utilizes a x8 organization, making it suitable for various memory architectures.
7. Temperature Range: Designed to operate within a wide temperature range, suitable for various environments.
8. Features: Includes built-in features like write leveling, on-die termination, and self-refresh capabilities for enhanced performance and reliability.
This memory chip is ideal for use in applications such as mobile devices, laptops, and other consumer electronics demanding high-speed and efficient memory solutions.
Package
The K4A8G085WB-BIRC is packaged in a BGA (Ball Grid Array) format. This type of packaging allows for a compact design with a high pin count, improving performance and reliability in electronic applications.
Pinout
The K4A8G085WB-BIRC is a 1GB DDR3 SDRAM memory chip produced by Samsung. It comes in a 78-ball FBGA (Fine Ball Grid Array) package.
### Pin Count:
- Ball Count: 78 balls
### Function:
- This memory chip is designed for use in various electronics, including computers and mobile devices, providing high-speed data storage and retrieval. It operates at a data rate of 1066 MT/s (megatransfers per second) and supports various features such as burst lengths and read/write operations. The chip typically has a power supply voltage of 1.5V, making it suitable for energy-efficient applications.
In summary, the K4A8G085WB-BIRC is a 1GB DDR3 memory with 78 balls, primarily used for high-performance data processing in consumer electronics.
### Pin Count:
- Ball Count: 78 balls
### Function:
- This memory chip is designed for use in various electronics, including computers and mobile devices, providing high-speed data storage and retrieval. It operates at a data rate of 1066 MT/s (megatransfers per second) and supports various features such as burst lengths and read/write operations. The chip typically has a power supply voltage of 1.5V, making it suitable for energy-efficient applications.
In summary, the K4A8G085WB-BIRC is a 1GB DDR3 memory with 78 balls, primarily used for high-performance data processing in consumer electronics.
Manufacturer
The K4A8G085WB-BIRC is manufactured by Samsung Electronics, a South Korean multinational conglomerate. Samsung is primarily known for its electronics, particularly in the fields of semiconductors, consumer electronics, and telecommunications. The company is one of the largest manufacturers of memory chips and plays a significant role in the global semiconductor market. In addition to memory products, Samsung also produces a wide range of consumer devices, including smartphones, televisions, and home appliances. The K4A8G085WB-BIRC specifically refers to a type of DRAM (Dynamic Random Access Memory) chip used in various electronic applications, highlighting Samsung's extensive involvement in cutting-edge technology and innovation.
Application
The K4A8G085WB-BIRC is a 1GB DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip primarily used in consumer electronics, including smartphones, tablets, and laptops. It is also suitable for various applications in automotive electronics, networking devices, and embedded systems where high-speed data processing and memory are required.
Equivalent
The K4A8G085WB-BIRC chip, a 1GB DDR3 SDRAM, has several equivalent products, including:
1. MT41K1G8
2. H5TQ2G83BFR
3. HY5S1G831C
4. K4B4G0846B
These alternatives typically share similar specifications in terms of capacity, speed, and architecture, but always check datasheets for specific compatibility before substitution.
1. MT41K1G8
2. H5TQ2G83BFR
3. HY5S1G831C
4. K4B4G0846B
These alternatives typically share similar specifications in terms of capacity, speed, and architecture, but always check datasheets for specific compatibility before substitution.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
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