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K4A4G165WF-BCWE
4Gbit 1.2V 1.6GHz DDR4 SDRAM FBGA-96 Memory (ICs) RoHS
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- Mfr。パート #K4A4G165WF-BCWE
- パッケージ
- データシート
- 在庫中12730
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Packaging | FBGA-96 |
| Clock Frequency | 1.6GHz |
| Memory Format | DDR4 SDRAM |
| Memory Size | 4Gbit |
| Operating temperature | 0℃~+85℃ |
| Voltage - Supply | 1.2V |
概要
Description
The K4A4G165WF-BCWE is a 4GB DDR4 SDRAM (Synchronous Dynamic Random Access Memory) chip developed by Samsung. It is designed for high-performance applications, commonly used in smartphones, tablets, and other mobile devices. The memory operates at a voltage of 1.2V, contributing to energy efficiency and lower power consumption compared to earlier DDR generations.
With a data transfer rate of up to 2400 MT/s (megatransfers per second), it ensures quick read and write operations, enhancing overall device performance. The device comes in a small form factor, typically in a BGA (Ball Grid Array) package, facilitating integration into compact electronic designs.
The K4A4G165WF-BCWE is built with advanced manufacturing processes, ensuring reliability and durability under various operating conditions. It supports various features like burst read/write modes, which optimize data throughput and efficiency, making it a suitable choice for modern computing and mobile applications.
With a data transfer rate of up to 2400 MT/s (megatransfers per second), it ensures quick read and write operations, enhancing overall device performance. The device comes in a small form factor, typically in a BGA (Ball Grid Array) package, facilitating integration into compact electronic designs.
The K4A4G165WF-BCWE is built with advanced manufacturing processes, ensuring reliability and durability under various operating conditions. It supports various features like burst read/write modes, which optimize data throughput and efficiency, making it a suitable choice for modern computing and mobile applications.
Features
The K4A4G165WF-BCWE is a DRAM memory chip from Samsung, specifically designed for mobile applications. Here are its key features:
1. Type: LPDDR4 (Low Power Double Data Rate 4) memory, which provides efficient power consumption and high performance.
2. Capacity: 4GB (Gigabytes), suitable for modern mobile devices requiring substantial memory.
3. Data Rate: Supports a data rate of up to 3200 MT/s (megatransfers per second), enabling fast data processing.
4. Package: Available in a compact package type, ideal for space-constrained mobile designs.
5. Voltage: Operates at a low voltage of 1.1V, contributing to energy efficiency and prolonging battery life in portable devices.
6. Architecture: Utilizes a 16-bit I/O interface, enhancing bandwidth and overall system performance.
7. Applications: Commonly used in smartphones, tablets, and other mobile devices requiring high-speed memory solutions.
These features make the K4A4G165WF-BCWE a reliable choice for enhancing the performance of mobile computing systems.
1. Type: LPDDR4 (Low Power Double Data Rate 4) memory, which provides efficient power consumption and high performance.
2. Capacity: 4GB (Gigabytes), suitable for modern mobile devices requiring substantial memory.
3. Data Rate: Supports a data rate of up to 3200 MT/s (megatransfers per second), enabling fast data processing.
4. Package: Available in a compact package type, ideal for space-constrained mobile designs.
5. Voltage: Operates at a low voltage of 1.1V, contributing to energy efficiency and prolonging battery life in portable devices.
6. Architecture: Utilizes a 16-bit I/O interface, enhancing bandwidth and overall system performance.
7. Applications: Commonly used in smartphones, tablets, and other mobile devices requiring high-speed memory solutions.
These features make the K4A4G165WF-BCWE a reliable choice for enhancing the performance of mobile computing systems.
Package
The K4A4G165WF-BCWE is a 4Gb DDR3 SDRAM memory chip packaged in a Fine-Pitch Ball Grid Array (FBGA) form factor. This compact packaging allows for efficient space utilization and high-density applications in electronic devices.
Pinout
The K4A4G165WF-BCWE is a DRAM memory chip produced by Samsung, specifically a 4Gb DDR4 SDRAM device. It comes in a 78-ball FBGAA (Fine Pitch Ball Grid Array) package. The pin count for this device is 78 balls.
The primary functions of the K4A4G165WF-BCWE include serving as volatile memory for data storage in various electronic devices such as computers, servers, and mobile devices. It operates at a voltage of 1.2V and supports various data rates, providing efficient performance for high-speed applications. The device is designed for use in memory modules like DIMMs and SoDIMMs, making it suitable for both desktop and laptop configurations.
The primary functions of the K4A4G165WF-BCWE include serving as volatile memory for data storage in various electronic devices such as computers, servers, and mobile devices. It operates at a voltage of 1.2V and supports various data rates, providing efficient performance for high-speed applications. The device is designed for use in memory modules like DIMMs and SoDIMMs, making it suitable for both desktop and laptop configurations.
Manufacturer
The K4A4G165WF-BCWE is manufactured by Samsung Electronics, a South Korean multinational company. Samsung is known for its wide range of products, including semiconductors, consumer electronics, and telecommunications equipment. The company is one of the largest manufacturers of memory chips globally, producing DRAM, NAND flash memory, and other semiconductor products. Samsung Electronics is a key player in the technology sector, renowned for its innovation and research in electronics and digital technologies.
Application
The K4A4G165WF-BCWE is a DDR4 SDRAM memory chip commonly used in applications such as smartphones, tablets, laptops, and other consumer electronics. It supports high-speed data processing and is ideal for gaming devices, networking equipment, and server applications due to its energy efficiency and performance. Additionally, it is utilized in automotive and industrial electronics for data storage and processing tasks.
Equivalent
The K4A4G165WF-BCWE is a 4Gb DDR4 SDRAM chip. Equivalent products include similar 4Gb DDR4 chips from various manufacturers, such as:
1. Micron MT40A4G8
2. Hynix H5AN4G8NFD
3. Samsung K4A4G165WF-BCEU
Ensure to check specifications like voltage, package type, and speed for compatibility.
1. Micron MT40A4G8
2. Hynix H5AN4G8NFD
3. Samsung K4A4G165WF-BCEU
Ensure to check specifications like voltage, package type, and speed for compatibility.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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