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JS28F256M29EWHA
IC FLASH 256MBIT PARALLEL 56TSOP
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- Mfr。パート #JS28F256M29EWHA
- パッケージ
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仕様
| Part Status | Obsolete |
| Base Product Number | JS28F256M29 |
| DigiKey Programmable | Verified |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 256Mbit |
| Memory Organization | 32M x 8, 16M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 110ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package | 56-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 56-TSOP |
| Packaging | Tray |
| Access Time | 110 ns |
概要
Description
The JS28F256M29EWHA is a 256 megabit (Mb) NOR Flash memory device from the Intel family of flash memories, designed for high-performance storage applications. It features a x8 data bus interface and is commonly used in embedded systems, providing reliable non-volatile storage for firmware, application code, and other critical data.
Key specifications include a voltage range typically between 2.7V to 3.6V, enabling operation in low-power applications. The device supports various programming and erasing operations, with a typical program time of around 200 microseconds per 256 bytes and an erase time of about 1 second for a full 256Kb block.
It employs advanced features like a burst mode for faster data access and an easy-to-use command interface, making it suitable for a wide range of applications, including consumer electronics, automotive systems, and industrial devices. The combination of high density, reliability, and performance makes the JS28F256M29EWHA a popular choice for developers seeking durable and efficient memory solutions.
Key specifications include a voltage range typically between 2.7V to 3.6V, enabling operation in low-power applications. The device supports various programming and erasing operations, with a typical program time of around 200 microseconds per 256 bytes and an erase time of about 1 second for a full 256Kb block.
It employs advanced features like a burst mode for faster data access and an easy-to-use command interface, making it suitable for a wide range of applications, including consumer electronics, automotive systems, and industrial devices. The combination of high density, reliability, and performance makes the JS28F256M29EWHA a popular choice for developers seeking durable and efficient memory solutions.
Features
The JS28F256M29EWHA is a 256Mb (megabit) NAND Flash memory device, specifically designed for high-performance applications. Key features include:
1. Capacity: 256Mb density, suitable for various data storage needs.
2. Interface: Supports a Serial Peripheral Interface (SPI), enabling straightforward integration with microcontrollers and other digital systems.
3. Speed: Offers fast read and write speeds, enhancing data transfer efficiency.
4. Endurance: Designed for high endurance with a write/erase cycle count, making it reliable for applications requiring frequent data updates.
5. Low Power Consumption: Optimized for power efficiency, allowing for lower operational costs in battery-operated devices.
6. Data Retention: Provides excellent data retention capabilities, ensuring data integrity over time.
7. Applications: Ideal for use in consumer electronics, industrial applications, automotive systems, and embedded devices.
These features make the JS28F256M29EWHA suitable for various applications requiring reliable and efficient memory solutions.
1. Capacity: 256Mb density, suitable for various data storage needs.
2. Interface: Supports a Serial Peripheral Interface (SPI), enabling straightforward integration with microcontrollers and other digital systems.
3. Speed: Offers fast read and write speeds, enhancing data transfer efficiency.
4. Endurance: Designed for high endurance with a write/erase cycle count, making it reliable for applications requiring frequent data updates.
5. Low Power Consumption: Optimized for power efficiency, allowing for lower operational costs in battery-operated devices.
6. Data Retention: Provides excellent data retention capabilities, ensuring data integrity over time.
7. Applications: Ideal for use in consumer electronics, industrial applications, automotive systems, and embedded devices.
These features make the JS28F256M29EWHA suitable for various applications requiring reliable and efficient memory solutions.
Package
The JS28F256M29EWHA is packaged in a TSOP (Thin Small Outline Package) type, specifically a 48-lead TSOP. This form factor is designed for surface mount applications, enabling compact designs in electronic devices.
Pinout
The JS28F256M29EWHA is a 256 Mb (32 MB) NOR Flash memory chip. It typically comes in a 48-lead TSOP (Thin Small Outline Package) or a 63-ball BGA (Ball Grid Array) package, with a pin count of 48 or 63, depending on the package type.
The primary functions of the pins include:
- Address Pins (A0-A21): Used for addressing memory locations within the chip.
- Data Pins (DQ0-DQ31): Bidirectional data bus for reading/writing data.
- Chip Select (CS): Activates the chip for communication.
- Write Enable (WE): Enables writing operations.
- Output Enable (OE): Enables output data on the data pins.
- Ready/Busy (R/B): Indicates the status of the device.
- Reset (RESET): Resets the device.
This chip supports asynchronous read operations and supports various programming and erase methods, making it suitable for embedded applications.
The primary functions of the pins include:
- Address Pins (A0-A21): Used for addressing memory locations within the chip.
- Data Pins (DQ0-DQ31): Bidirectional data bus for reading/writing data.
- Chip Select (CS): Activates the chip for communication.
- Write Enable (WE): Enables writing operations.
- Output Enable (OE): Enables output data on the data pins.
- Ready/Busy (R/B): Indicates the status of the device.
- Reset (RESET): Resets the device.
This chip supports asynchronous read operations and supports various programming and erase methods, making it suitable for embedded applications.
Manufacturer
The JS28F256M29EWHA is manufactured by Micron Technology, Inc., a prominent American company specializing in the design and production of memory and storage solutions. Founded in 1978 and headquartered in Boise, Idaho, Micron is known for its innovative semiconductor technologies, including DRAM, NAND flash memory, and other memory products. The company serves various markets, including computing, mobile devices, automotive, and industrial applications, making it a key player in the global semiconductor industry. Micron's commitment to research and development enables it to deliver high-performance memory solutions that meet the evolving needs of its diverse customers.
Application
The JS28F256M29EWHA is a 256Mb NOR Flash memory device typically used in application areas such as embedded systems, automotive electronics, telecommunications, and consumer electronics. It is suitable for firmware storage, software updates, and data logging due to its fast read speeds, reliability, and ability to withstand harsh environments, making it ideal for applications requiring non-volatile memory.
Equivalent
The JS28F256M29EWHA chip is a 256Mb (32MB) NAND flash memory. Equivalent products include the Micron MT29F256G08, Intel E28F256M29, and Spansion S29GL256P. Other compatible alternatives may exist, but it's essential to check specifications like pin configuration, voltage, and interface type to ensure compatibility.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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