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IXTP3N120
MOSFET N-CH 1200V 3A TO220AB
- メーカー
- Mfr。パート #IXTP3N120
- パッケージ TO-220-3
- データシート
- 在庫中7035
100% オリジナル &新しい
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仕様
| Package | Tube |
| Series | HiPerFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 1200 V |
| Current-ContinuousDrain(Id)@25°C | 3A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.5Ohm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 42 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1350 pF @ 25 V |
| PowerDissipation(Max) | 200W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220-3 |
概要
Description
IXTP3N120 is a high-performance, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a voltage rating of 120V and a current rating of 3A, making it suitable for various power management and conversion tasks, including switching, amplifying, and controlling electrical signals.
Key characteristics include low on-resistance, which minimizes power loss and heat generation during operation, and fast switching speeds, allowing for efficient performance in high-frequency applications. The device is often used in power supplies, motor control circuits, and automotive applications.
The IXTP3N120 typically comes in a TO-220 or similar package, facilitating effective thermal dissipation. When designing circuits with this MOSFET, considerations around gate drive requirements, thermal management, and switching losses are crucial for optimal performance.
Overall, IXTP3N120 offers reliability and efficiency for engineers looking to implement robust power solutions in their designs.
Key characteristics include low on-resistance, which minimizes power loss and heat generation during operation, and fast switching speeds, allowing for efficient performance in high-frequency applications. The device is often used in power supplies, motor control circuits, and automotive applications.
The IXTP3N120 typically comes in a TO-220 or similar package, facilitating effective thermal dissipation. When designing circuits with this MOSFET, considerations around gate drive requirements, thermal management, and switching losses are crucial for optimal performance.
Overall, IXTP3N120 offers reliability and efficiency for engineers looking to implement robust power solutions in their designs.
Features
The IXTP3N120 is an N-channel MOSFET designed for high-power applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 120V.
2. Current Rating: It supports a continuous drain current (I_D) of up to 3A at a specified temperature.
3. On-Resistance: Low on-resistance (R_DS(on)), typically around 0.5 ohms, which reduces power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is between 2-4V, facilitating easy drive with low-voltage logic levels.
5. Package Type: It usually comes in a TO-220 or similar package, suitable for efficient heat dissipation.
6. Fast Switching Speed: Designed for quick switching applications, making it ideal for power supplies and motor drives.
7. Thermal Resistance: Good thermal performance ratings, allowing for reliable operation under various conditions.
These features make the IXTP3N120 suitable for applications in power management, automotive, and industrial control systems.
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 120V.
2. Current Rating: It supports a continuous drain current (I_D) of up to 3A at a specified temperature.
3. On-Resistance: Low on-resistance (R_DS(on)), typically around 0.5 ohms, which reduces power loss during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is between 2-4V, facilitating easy drive with low-voltage logic levels.
5. Package Type: It usually comes in a TO-220 or similar package, suitable for efficient heat dissipation.
6. Fast Switching Speed: Designed for quick switching applications, making it ideal for power supplies and motor drives.
7. Thermal Resistance: Good thermal performance ratings, allowing for reliable operation under various conditions.
These features make the IXTP3N120 suitable for applications in power management, automotive, and industrial control systems.
Package
The IXTP3N120 is typically available in a TO-220 package type. This package is designed for power devices, providing efficient heat dissipation and ease of mounting.
Pinout
The IXTP3N120 is a 1200V N-channel MOSFET designed for high-voltage applications. It typically comes in a TO-220 package, which has a pin count of three. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load and is where the main current flows when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the power supply. It completes the circuit for the current flowing through the MOSFET.
The IXTP3N120 is utilized in various applications, including power supplies, motor drives, and industrial equipment, due to its high voltage and current handling capabilities.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to this pin allows current to flow between the drain and source.
2. Drain (D): This pin is connected to the load and is where the main current flows when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or negative side of the power supply. It completes the circuit for the current flowing through the MOSFET.
The IXTP3N120 is utilized in various applications, including power supplies, motor drives, and industrial equipment, due to its high voltage and current handling capabilities.
Manufacturer
The IXTP3N120 is manufactured by IXYS Corporation, a subsidiary of Lite-On Technology Corporation. IXYS specializes in high-performance semiconductor devices and power management solutions, focusing on applications such as automotive, industrial, and renewable energy systems. The company is known for its expertise in power semiconductor technology, including MOSFETs, IGBTs, and rectifiers. Founded in 1983, IXYS has established a strong presence in the semiconductor industry, providing innovative solutions for various sectors and contributing to advancements in power efficiency and control.
Application
The IXTP3N120 is a high-voltage N-channel MOSFET used in various applications, including power supplies, motor control, and lighting systems. Its features make it suitable for switch-mode power supplies (SMPS), inverters, and class D amplifiers. Additionally, it can be used in automotive systems and industrial automation for efficient power management and control.
Equivalent
The IXTP3N120 is an N-channel MOSFET with a 1200V rating and a continuous current capacity of 3A. Equivalent products include the STP3NB120, MTP3N120E, and IRF840. Always verify specifications like Vds, Id, Rds(on), and package type to ensure compatibility for your application.
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