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IXTK110N20L2
MOSFET N-CH 200V 110A TO264
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- Mfr。パート #IXTK110N20L2
- パッケージ TO-264-3
- データシート
- 在庫中4118
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仕様
| Package | Tube |
| Series | Linear L2™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 110A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 24mOhm @ 55A, 10V |
| Vgs(th)(Max)@Id | 4.5V @ 3mA |
| GateCharge(Qg)(Max)@Vgs | 500 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 23000 pF @ 25 V |
| PowerDissipation(Max) | 960W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-264 (IXTK) |
概要
Description
The IXTK110N20L2 is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power electronics applications. It features a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) rating of 110A, making it suitable for high voltage and high current applications. The device is known for its low on-resistance (R_DS(on)), which enhances efficiency by minimizing power losses during operation.
The IXTK110N20L2 is often used in switching power supplies, motor drives, and other applications requiring efficient power management. Its robust construction and thermal performance allow for operation in demanding environments. The MOSFET is housed in a TO-220 package, facilitating effective heat dissipation and easy mounting on heatsinks.
Key specifications include a total gate charge (Q_g) that influences switching speed and efficiency, making it ideal for fast switching applications. Overall, the IXTK110N20L2 is a reliable choice for engineers designing high-efficiency power conversion systems.
The IXTK110N20L2 is often used in switching power supplies, motor drives, and other applications requiring efficient power management. Its robust construction and thermal performance allow for operation in demanding environments. The MOSFET is housed in a TO-220 package, facilitating effective heat dissipation and easy mounting on heatsinks.
Key specifications include a total gate charge (Q_g) that influences switching speed and efficiency, making it ideal for fast switching applications. Overall, the IXTK110N20L2 is a reliable choice for engineers designing high-efficiency power conversion systems.
Features
The IXTK110N20L2 is a high-performance N-channel MOSFET designed for various applications in power management and conversion. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 110A, making it ideal for high-current applications.
3. R_DS(on): It offers a low on-resistance of approximately 0.11Ω, ensuring efficient operation and reduced power loss.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) typically ranges from 2V to 4V, facilitating easy drive requirements.
5. Fast Switching: The MOSFET is designed for fast switching, enabling efficient performance in pulse-width modulation (PWM) applications.
6. Thermal Performance: It has a robust thermal package, providing good thermal conductivity and heat dissipation.
7. Package Type: Typically available in TO-220 or similar packages for easy integration into circuits.
These features make the IXTK110N20L2 suitable for applications such as power supplies, motor drivers, and inverters.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 200V, suitable for high-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) of up to 110A, making it ideal for high-current applications.
3. R_DS(on): It offers a low on-resistance of approximately 0.11Ω, ensuring efficient operation and reduced power loss.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) typically ranges from 2V to 4V, facilitating easy drive requirements.
5. Fast Switching: The MOSFET is designed for fast switching, enabling efficient performance in pulse-width modulation (PWM) applications.
6. Thermal Performance: It has a robust thermal package, providing good thermal conductivity and heat dissipation.
7. Package Type: Typically available in TO-220 or similar packages for easy integration into circuits.
These features make the IXTK110N20L2 suitable for applications such as power supplies, motor drivers, and inverters.
Package
The IXTK110N20L2 is typically offered in a TO-220 package type. This package is designed for efficient heat dissipation and is commonly used for power transistors and other high-power semiconductor devices.
Pinout
The IXTK110N20L2 is a N-channel MOSFET with a pin count of 8. It is typically packaged in a TO-220 form factor. The main functions of its pins are as follows:
1. Gate (G): Controls the MOSFET operation; applying voltage here turns the device on.
2. Drain (D): The terminal through which the current flows out when the device is on.
3. Source (S): The terminal through which the current enters; usually connected to ground in common-source configurations.
4. Tab: Often connected to the Source; also serves as a heat sink for thermal management.
The IXTK110N20L2 is designed for high-efficiency switching applications, offering low on-resistance and high current handling capabilities. Its specifications make it suitable for power management in various electronic circuits.
1. Gate (G): Controls the MOSFET operation; applying voltage here turns the device on.
2. Drain (D): The terminal through which the current flows out when the device is on.
3. Source (S): The terminal through which the current enters; usually connected to ground in common-source configurations.
4. Tab: Often connected to the Source; also serves as a heat sink for thermal management.
The IXTK110N20L2 is designed for high-efficiency switching applications, offering low on-resistance and high current handling capabilities. Its specifications make it suitable for power management in various electronic circuits.
Manufacturer
The IXTK110N20L2 is manufactured by IXYS Corporation, a subsidiary of Littelfuse, Inc. IXYS specializes in power semiconductor products, including MOSFETs, IGBTs, and photonics devices. The company primarily focuses on high-performance power management solutions for various applications, including industrial, automotive, and renewable energy sectors. Littelfuse, founded in 1927, is a global leader in circuit protection, power control, and sensing products, and its acquisition of IXYS in 2018 expanded its capabilities in power electronics.
Application
The IXTK110N20L2 is a high-voltage, N-channel MOSFET primarily used in power management applications. Its areas of application include switch mode power supplies (SMPS), DC-DC converters, motor drives, and inverters for renewable energy systems. It is suitable for automotive, industrial, and consumer electronics due to its efficiency, thermal performance, and fast switching capabilities.
Equivalent
The IXTK110N20L2 is a high-voltage MOSFET. Equivalent products include the Infineon IPP110N20N3, Nexperia PSMN110N20, and ON Semiconductor NTP110N20. Always check the specifications, such as voltage rating, RDS(on), and package type, to ensure compatibility for your specific application.
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