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IXTA08N100D2

Name: IXTA08N100D2
Rating: 4.7 (12 reviews)

MOSFET N-CH 1000V 800MA TO263

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Mfr。パート #IXTA08N100D2
パッケージ TO-263AA
データシート
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仕様

Package	Tube
Series	Depletion
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	1000 V
Current-ContinuousDrain(Id)@25°C	800mA (Tc)
RdsOn(Max)@IdVgs	21Ohm @ 400mA, 0V
GateCharge(Qg)(Max)@Vgs	14.6 nC @ 5 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	325 pF @ 25 V
FETFeature	Depletion Mode
PowerDissipation(Max)	60W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	TO-263AA

概要

Description

The IXTA08N100D2 is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by IXYS. It is designed for high-voltage applications, featuring a maximum drain-source voltage (V_DS) of 1000V and a continuous drain current (I_D) of 8A. This device is suitable for various applications, including power converters, motor drives, and switching power supplies.
Key specifications include a low on-resistance (R_DS(on)), which enhances efficiency by minimizing power losses during operation. The IXTA08N100D2 also supports fast switching times, making it ideal for applications requiring rapid signal changes.
The device typically comes in a TO-220 or similar package, facilitating effective heat dissipation. Its robustness and high breakdown voltage make it a popular choice in industrial and consumer electronics.
When using the IXTA08N100D2, proper thermal management and gate drive considerations are essential to ensure reliable performance and longevity in applications.

Features

The Ixta08N100D2 is a high-voltage N-channel MOSFET designed for power applications. Here are its key features:
- Voltage Rating: 100V, making it suitable for high-voltage circuits.
- Current Rating: Capable of handling continuous drain currents, typically around 8A.
- R_DS(on): Low on-resistance, which minimizes conduction losses and improves efficiency.
- Gate Threshold Voltage: Designed to operate with a standard gate drive voltage, ensuring compatibility with various circuits.
- Package Type: Usually available in a TO-220 or similar packaging, facilitating heat dissipation.
- Fast Switching Speed: Ideal for applications requiring rapid switching, such as in power supplies and motor drives.
- Thermal Resistance: Good thermal performance for managing heat dissipation.
This MOSFET is widely used in applications including DC-DC converters, power inverters, and motor control systems, making it a versatile choice for electronic designs.

Package

The IXTA08N100D2 is packaged in a TO-247 format, which is a three-lead package designed for high-power applications. This type of package facilitates efficient heat dissipation and is suitable for use in power electronics.

Pinout

The IXTA08N100D2 is an N-channel MOSFET from IXYS, featuring a total of 3 pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to this terminal allows current to flow between the drain and source.
2. Drain (D) - This pin is where the current enters the MOSFET when it is turned on.
3. Source (S) - This pin is where the current exits the MOSFET.
The IXTA08N100D2 is designed for high voltage applications with a maximum drain-source voltage (V_DS) of 1000V and a continuous drain current (I_D) of 8A. Its primary function is to act as a switch or amplifier in electronic circuits, particularly in power management applications.

Manufacturer

The IXTA08N100D2 is manufactured by IXYS Corporation, which is a part of the Littelfuse, Inc. family. IXYS specializes in providing power semiconductor products, including MOSFETs, IGBTs, and integrated circuits used in various applications, such as motor control, renewable energy, and industrial automation. The company is known for its innovative technologies and robust product offerings that cater to the needs of the power electronics market. Littelfuse, which acquired IXYS in 2018, is a global leader in circuit protection, offering solutions for a wide range of industries including automotive, telecommunications, and consumer electronics.

Application

The IXTA08N100D2 is an IGBT (Insulated Gate Bipolar Transistor) designed for high-power applications. Its primary application areas include motor drives, power inverters for renewable energy systems, industrial automation, and switch-mode power supplies. Additionally, it is used in electric vehicles and traction systems due to its efficiency in handling high voltage and current.

Equivalent

The IXTA08N100D2 is an IGBT (Insulated Gate Bipolar Transistor) with a voltage rating of 1000V and a current rating of 8A. Equivalent products include:
1. STGWA8H100D
2. FGA25N120ANTD
3. FGH50N60SMD
Always verify specifications, such as gate drive voltage and thermal characteristics, to ensure compatibility for your specific application.