画像は参照用のみです。

IXGH6N170A

Name: IXGH6N170A
Rating: 4.7 (12 reviews)

IGBT NPT 1700V 6A TO-247AD

メーカー
Mfr。パート #IXGH6N170A
パッケージ
データシート IXGH6N170A DataSheet
在庫中37

+BOM RFQについて

100% オリジナル &新しい

出荷の準備ができている24時間

365日の保証

RFQおよびもっと割引を得る

仕様

Part Status	Active
IGBT Type	NPT
Voltage - Collector Emitter Breakdown (Max)	1700 V
Current - Collector (Ic) (Max)	6 A
Current - Collector Pulsed (Icm)	14 A
Vce(on) (Max) @ Vge, Ic	7V @ 15V, 3A
Power - Max	75 W
Switching Energy	590µJ (on), 180µJ (off)
Input Type	Standard
Gate Charge	18.5 nC
Td (on/off) @ 25°C	46ns/220ns
Test Condition	850V, 6A, 33Ohm, 15V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	TO-247AD
Base Product Number	IXGH6

概要

Description

The IXGH6N170A is an N-channel insulated gate bipolar transistor (IGBT) designed for high-efficiency switching applications. With a voltage rating of 1700V and a current rating of 6A, this device is suitable for use in power inverters, motor drives, and other high-voltage applications. It combines the high input impedance and fast switching characteristics of a MOSFET with the high current and low saturation voltage capabilities of a bipolar transistor.
Key features include low on-state voltage drop, high-speed switching, and ruggedness against over-voltage and short-circuit conditions. The IXGH6N170A is typically used in applications requiring efficient power conversion, such as renewable energy systems, industrial automation, and consumer electronics. Its robust design makes it a reliable choice for demanding applications, contributing to improved energy efficiency and system performance.

Features

The IXGH6N170A is a high-voltage, fast-switching insulated gate bipolar transistor (IGBT) designed for use in various power electronics applications. Key features include:
1. Voltage Rating: It has a maximum collector-emitter voltage (Vce) of 1700V, making it suitable for high-voltage applications.
2. Current Handling: Capable of handling a continuous collector current (Ic) of 6A, it is ideal for medium-power applications.
3. Low On-State Voltage: It offers a low on-state voltage drop, contributing to improved efficiency and reduced power losses during operation.
4. Fast Switching Speed: The device is designed for faster switching capabilities, which helps in enhancing the overall performance of power converters and inverters.
5. Thermal Performance: With a low thermal resistance, it provides better heat dissipation, enhancing reliability and operational lifespan.
This IGBT is commonly used in applications such as motor drives, power supplies, and renewable energy systems.

Package

The IXGH6N170A is typically packaged in a TO-247 or similar package type, which is designed for high-power applications, providing good thermal performance and easy mounting for heat dissipation.

Pinout

The IXGH6N170A is an N-channel MOSFET with a total of 8 pins. Its primary functions include acting as a switch in power management applications, allowing for efficient control of high-current loads. The key pin functions are as follows:
1. Gate (G) - Controls the MOSFET's switching behavior; applying a voltage here turns the device on.
2. Drain (D) - The main current-carrying terminal where the output is connected.
3. Source (S) - The terminal that connects to the ground or the return path for the load current.
4. Body Diode - Provides a path for current when the device is off, allowing for reverse current flow.
The IXGH6N170A features a maximum continuous drain current of 170A and a maximum voltage rating of 600V, making it suitable for high-power applications.

Manufacturer

The IXGH6N170A is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS is known for designing and producing advanced power semiconductor products and integrated circuits. The company specializes in high-performance devices used in various applications, including power management, motor control, renewable energy systems, and industrial automation. IXYS focuses on innovation in the semiconductor industry, offering products like MOSFETs, IGBTs, diodes, and thyristors. Its solutions are integral to improving energy efficiency and enhancing performance in electronics and electrical systems.

Application

The IXGH6N170A is a high-voltage, high-speed IGBT primarily used in industrial applications such as motor drives, UPS systems, renewable energy systems (like solar inverters), and switch-mode power supplies. Its capabilities make it suitable for applications requiring efficient power conversion and control in both commercial and residential sectors.

Equivalent

The IXGH6N170A is a high-voltage IGBT. Equivalent products include:
1. IRG4PH50KD (International Rectifier)
2. FGA25N120 (ON Semiconductor)
3. MG75J1 (Mitsubishi Electric)
4. SKM75GB123D (Semikron)
Always verify specifications for your application before substitution.