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IXFP20N85X

Name: IXFP20N85X
Rating: 4.7 (12 reviews)

MOSFET N-CH 850V 20A TO220AB

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Mfr。パート #IXFP20N85X
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仕様

Supplier	IXYS
Package	Tube
Series	HiPerFET™, Ultra X
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	850 V
Current-ContinuousDrain(Id)@25°C	20A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	330mOhm @ 500mA, 10V
Vgs(th)(Max)@Id	5.5V @ 2.5mA
GateCharge(Qg)(Max)@Vgs	63 nC @ 10 V
Vgs(Max)	±30V
InputCapacitance(Ciss)(Max)@Vds	1660 pF @ 25 V
PowerDissipation(Max)	540W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-220-3

概要

Description

IXFP20N85X is an IXYS/Onsemi IXFP-series N-channel, enhancement-mode power MOSFET. It’s intended for high-voltage switching and power handling in compact circuits.
Key points:
- Vds and Id: about 85V maximum, ~20A continuous current.
- Rds(on): typically in the tens of milliohms range (varies with temperature and gate drive; datasheet gives exact values).
- Gate drive: best with ~10V gate-to-source for full conduction; Vgs(th) ~2–4V. Not guaranteed as a logic-level device.
- Package: 3-terminal device available in common power packages (e.g., TO-220AB, D2PAK, etc.).
- Applications: DC-DC converters, motor drivers, power switches in buck/boost/inverter stages, inline switching regulators.
- Design notes: heat sinking required; use proper gate drive, gate resistor, and protection (e.g., transient suppression and Vgs limits) per the datasheet.
For exact electrical figures (Rds(on) at your operating temperature, packaging options, and safe operating area), consult the official IXFP20N85X datasheet.

Features

IXFP20N85X is an N-channel enhancement-mode power MOSFET. Key features likely include:
- Vds: 85 V and Id: ~20 A rating
- Low on-resistance (Rds(on) specified in datasheet for reduced conduction losses)
- Fast switching performance (low gate charge for efficient driving)
- Robust electrical characteristics (avalanche-rated, wide SOA for protection against transients)
- Integrated body diode for freewheeling currents
- Trench/MOSFET technology for reliable operation
- Available in common power packages (e.g., TO-220AB, D2PAK)
- RoHS-compliant and lead-free
Applications: switching regulators, DC-DC converters, motor drives, and power management. For exact parameters (Rds(on), Qgs, gate threshold, packaging), please consult the official IXYS datasheet.

Package

The IXFP20N85X is a 20 A, 850 V N-channel MOSFET supplied in a TO-247 (three-pin) through-hole power package.

Pinout

Pin count: 3 electrical pins (plus a metal mounting tab). Pins (front view, leads down): Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source. The mounting tab is electrically connected to the Drain.
Function: IXFP20N85X is an N‑channel, enhancement‑mode power MOSFET (high‑voltage switch) rated for ~850 V VDS and designed for high‑voltage switching and power‑conversion applications (SMPS, inverters, motor drives).

Manufacturer

The IXFP20N85X is made by IXYS Corporation (now part of Littelfuse following acquisition). IXYS is a semiconductor company specializing in power semiconductors and power ICs—discrete MOSFETs/IGBTs, diodes, RF power devices and power modules for industrial, automotive, communications and consumer applications.

Application

IXFP20N85X is an N-channel power MOSFET (85 V). Typical application areas:
- Switching power supplies (offline PFC, DC-DC converters)
- Motor drives and PWM inverters (BLDC/servo)
- Solar inverters and battery charging/discharge circuits
- Uninterruptible power supplies (UPS) and telecom power equipment
- Industrial automation and automotive power electronics
Note: used wherever a high-voltage, high-efficiency switching device is needed.