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IXFN48N50
MOSFET N-CH 500V 48A SOT-227B
- メーカー
- Mfr。パート #IXFN48N50
- パッケージ SOT-227-4
- データシート
- 在庫中6213
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仕様
| Package | Tube |
| Series | HiPerFET™ |
| ProductStatus | Not For New Designs |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 500 V |
| Current-ContinuousDrain(Id)@25°C | 48A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 100mOhm @ 500mA, 10V |
| Vgs(th)(Max)@Id | 4V @ 8mA |
| GateCharge(Qg)(Max)@Vgs | 270 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 8400 pF @ 25 V |
| PowerDissipation(Max) | 520W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Chassis Mount |
| SupplierDevicePackage | SOT-227B |
概要
Description
IXFN48N50 is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by IXYS Corporation. It is designed for high-voltage applications, featuring a voltage rating of 500 volts and a continuous current rating of 48 amperes. This device is typically used in power management, switching applications, and motor control due to its efficient performance and thermal stability.
The IXFN48N50 offers low on-resistance, which minimizes power loss during operation, and has fast switching capabilities, making it suitable for high-frequency applications. Additionally, it exhibits excellent reliability and robustness, making it a preferred choice for industrial and consumer electronics.
Key specifications include a maximum gate-source voltage of ±20 volts and a maximum junction temperature of 150°C. The IXFN48N50 is packaged in a TO-247 format, facilitating easy integration into electronic designs. Overall, this MOSFET is ideal for engineers seeking reliable and efficient components for power electronics systems.
The IXFN48N50 offers low on-resistance, which minimizes power loss during operation, and has fast switching capabilities, making it suitable for high-frequency applications. Additionally, it exhibits excellent reliability and robustness, making it a preferred choice for industrial and consumer electronics.
Key specifications include a maximum gate-source voltage of ±20 volts and a maximum junction temperature of 150°C. The IXFN48N50 is packaged in a TO-247 format, facilitating easy integration into electronic designs. Overall, this MOSFET is ideal for engineers seeking reliable and efficient components for power electronics systems.
Features
The IXFN48N50 is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: The device can handle a drain-source voltage (V_DS) of up to 500V.
2. Current Rating: It supports continuous drain current (I_D) of up to 48A, making it suitable for high-load applications.
3. On-Resistance: The on-resistance (R_DS(on)) is low, typically around 0.1Ω, enhancing efficiency and reducing heat generation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling operation with standard logic levels.
5. Package Type: Typically available in TO-220 and other package formats, facilitating ease of heat dissipation and integration into circuits.
6. Fast Switching: Designed for quick switching applications, it minimizes switching losses, contributing to overall system efficiency.
These features make the IXFN48N50 suitable for power supplies, motor drives, and other high-voltage applications in industrial and consumer electronics.
1. Voltage Rating: The device can handle a drain-source voltage (V_DS) of up to 500V.
2. Current Rating: It supports continuous drain current (I_D) of up to 48A, making it suitable for high-load applications.
3. On-Resistance: The on-resistance (R_DS(on)) is low, typically around 0.1Ω, enhancing efficiency and reducing heat generation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling operation with standard logic levels.
5. Package Type: Typically available in TO-220 and other package formats, facilitating ease of heat dissipation and integration into circuits.
6. Fast Switching: Designed for quick switching applications, it minimizes switching losses, contributing to overall system efficiency.
These features make the IXFN48N50 suitable for power supplies, motor drives, and other high-voltage applications in industrial and consumer electronics.
Package
The IXFN48N50 is packaged in a TO-247 style package. This configuration is designed for high-power applications, providing efficient heat dissipation and a robust connection.
Pinout
The IXFN48N50 is a high-voltage N-channel MOSFET with a pin count of 4. The pin configuration is as follows:
1. Gate (G): The control terminal that turns the MOSFET on or off.
2. Drain (D): The terminal through which the current flows out of the MOSFET when it is turned on.
3. Source (S): The terminal through which the current flows into the MOSFET when it is turned on.
4. Tab (or heat sink): Often connected to the source, it is used for heat dissipation.
This MOSFET is designed for applications requiring high voltage and current handling, making it suitable for power supply circuits, motor control, and other high-performance applications. Its specifications include a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of approximately 48A.
1. Gate (G): The control terminal that turns the MOSFET on or off.
2. Drain (D): The terminal through which the current flows out of the MOSFET when it is turned on.
3. Source (S): The terminal through which the current flows into the MOSFET when it is turned on.
4. Tab (or heat sink): Often connected to the source, it is used for heat dissipation.
This MOSFET is designed for applications requiring high voltage and current handling, making it suitable for power supply circuits, motor control, and other high-performance applications. Its specifications include a maximum drain-source voltage (V_DS) of 500V and a continuous drain current (I_D) of approximately 48A.
Manufacturer
The IXFN48N50 is manufactured by IXYS Corporation, which is a subsidiary of Littelfuse, Inc. IXYS specializes in semiconductor products and power management solutions. The company focuses on the design, development, and manufacturing of a wide range of power semiconductors, including MOSFETs, IGBTs, and diodes, catering to various industries such as automotive, industrial, and renewable energy. Littelfuse, the parent company, is known for its circuit protection devices and solutions, further expanding its portfolio to include advanced semiconductor technology through IXYS.
Application
The IXFN48N50 is an N-channel power MOSFET typically used in applications such as power supplies, motor drives, and inverter circuits. Its high voltage and current ratings make it suitable for switching applications in industrial equipment, renewable energy systems, and consumer electronics. Additionally, it can be utilized in DC-DC converters and power management systems for efficient energy conversion.
Equivalent
The IXFN48N50 is an N-channel MOSFET with a voltage rating of 500V and a current rating of 48A. Equivalent products include:
1. IRF840 - 500V, 8A
2. STP48NM50 - 500V, 48A
3. MTP50N50 - 500V, 50A
4. FQP50N50 - 500V, 50A
Check specifications for exact ratings and suitability for your application.
1. IRF840 - 500V, 8A
2. STP48NM50 - 500V, 48A
3. MTP50N50 - 500V, 50A
4. FQP50N50 - 500V, 50A
Check specifications for exact ratings and suitability for your application.
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