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IXFK140N30P
MOSFET N-CH 300V 140A TO264AA
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- Mfr。パート #IXFK140N30P
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仕様
| Supplier | IXYS |
| Package | Tube |
| Series | HiPerFET™, Polar |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 300 V |
| Current-ContinuousDrain(Id)@25°C | 140A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 24mOhm @ 70A, 10V |
| Vgs(th)(Max)@Id | 5V @ 8mA |
| GateCharge(Qg)(Max)@Vgs | 185 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 14800 pF @ 25 V |
| PowerDissipation(Max) | 1040W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-264AA (IXFK) |
概要
Description
IXFK140N30P is a 30-volt N-channel enhancement-mode power MOSFET from the IXFK family (IXYS/Littelfuse). It is designed for high-current switching applications and uses trench MOSFET technology to offer relatively low on-resistance, fast switching, and good ruggedness.
Key points:
- Type: N-channel power MOSFET
- Rating: Vds ≈ 30 V; continuous current capability around the high hundreds of amps (specified in the datasheet; device is intended for high-current applications)
- Features: low on-resistance, fast switching, rugged avalanche capability and good dv/dt immunity
- Packaging: available in common power packages (surface-mount such as D²PAK/TO-263 and other options; heat sinking is typical)
- Applications: switching power supplies, DC-DC converters, motor drivers, automotive and other high-current, low-voltage power electronics
Notes:
- For exact electrical numbers (Rds(on), gate charge, max peak pulsed current, thermal resistance, safe operating area) and package options, consult the IXFK140N30P datasheet.
- Temperature and bias conditions significantly affect performance; design with adequate heatsinking.
Key points:
- Type: N-channel power MOSFET
- Rating: Vds ≈ 30 V; continuous current capability around the high hundreds of amps (specified in the datasheet; device is intended for high-current applications)
- Features: low on-resistance, fast switching, rugged avalanche capability and good dv/dt immunity
- Packaging: available in common power packages (surface-mount such as D²PAK/TO-263 and other options; heat sinking is typical)
- Applications: switching power supplies, DC-DC converters, motor drivers, automotive and other high-current, low-voltage power electronics
Notes:
- For exact electrical numbers (Rds(on), gate charge, max peak pulsed current, thermal resistance, safe operating area) and package options, consult the IXFK140N30P datasheet.
- Temperature and bias conditions significantly affect performance; design with adequate heatsinking.
Features
IXFK140N30P is a high‑current, high‑voltage N‑channel MOSFET. Key features:
- N‑channel enhancement-mode trench MOSFET
- VDS: 300 V; ID: ~140 A
- Very low RDS(on): typical ~7–9 mΩ (max ~9–11 mΩ)
- Gate drive: threshold ~2–4 V; fully on at 10 V (low gate‑drive energy)
- Fast switching with low gate charge for efficient drive
- Avalanche ruggedness and robust SOA for protection against transients
- Wide operating temp range: approx. −55°C to +150°C
- RoHS compliant; available in common power packages (through‑hole and surface‑mount)
Applications: switch‑mode power supplies, motor drives, DC‑DC converters, and other high‑power switching needs.
- N‑channel enhancement-mode trench MOSFET
- VDS: 300 V; ID: ~140 A
- Very low RDS(on): typical ~7–9 mΩ (max ~9–11 mΩ)
- Gate drive: threshold ~2–4 V; fully on at 10 V (low gate‑drive energy)
- Fast switching with low gate charge for efficient drive
- Avalanche ruggedness and robust SOA for protection against transients
- Wide operating temp range: approx. −55°C to +150°C
- RoHS compliant; available in common power packages (through‑hole and surface‑mount)
Applications: switch‑mode power supplies, motor drives, DC‑DC converters, and other high‑power switching needs.
Package
The IXFK140N30P is supplied in a TO-247 (I2PAK) three‑lead through‑hole power package.
Pinout
- Pin count: 3 pins (Gate, Drain, Source) plus a drain tab (the tab is connected to Drain).
- Function: N-channel enhancement-mode power MOSFET (IXFK140N30P). Used as a high-current switch; conducts between Drain and Source when Gate-Source voltage is applied, with low Rds(on). Pin order varies by package; consult the datasheet for the exact pinout.
- Function: N-channel enhancement-mode power MOSFET (IXFK140N30P). Used as a high-current switch; conducts between Drain and Source when Gate-Source voltage is applied, with low Rds(on). Pin order varies by package; consult the datasheet for the exact pinout.
Manufacturer
The IXFK140N30P is manufactured by IXYS Corporation (brand IXYS). IXYS is a semiconductor company—now part of Littelfuse following a 2018 acquisition—that designs and manufactures power semiconductors and integrated circuits (power MOSFETs, IGBTs, diodes, drivers and related products) for power conversion, motor control and industrial, automotive and consumer applications.
Application
IXFK140N30P is a high-voltage, high-current N-channel MOSFET. Typical applications:
- Offline switching power supplies and adapters
- DC-DC converters
- Motor drives (BLDC, PMSM, induction) and servo drives
- Inverters for solar, UPS, and grid-tied systems
- Automotive power electronics (load switches, DC-DC converters)
- Offline switching power supplies and adapters
- DC-DC converters
- Motor drives (BLDC, PMSM, induction) and servo drives
- Inverters for solar, UPS, and grid-tied systems
- Automotive power electronics (load switches, DC-DC converters)
Equivalent
Do you mean pin‑for‑pin drop‑in replacements or functionally equivalent MOSFETs? If drop‑in, I need the package (TO‑247/TO‑220) and key specs (VDS, ID, RDS(on), VGS). Tell me which you want and I’ll list compatible parts.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
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TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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