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ISL9R3060P2
DIODE AVALANCHE 600V 30A TO2202
- メーカー
- Mfr。パート #ISL9R3060P2
- パッケージ
- データシート
- 在庫中473
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Series | Stealth™ |
| Part Status | Obsolete |
| Technology | Avalanche |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 30A |
| Voltage - Forward (Vf) (Max) @ If | 2.4 V @ 30 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 100 µA @ 600 V |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | TO-220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Base Product Number | ISL9R3060 |
| Reverse Recovery Time (trr) | 45 ns |
概要
Description
The ISL9R3060P2 is a high-performance N-channel MOSFET designed for power management applications. It features a voltage rating of 60V and a continuous drain current of 30A, making it suitable for various applications including power supplies, motor drives, and DC-DC converters. The device offers low R_DS(on), which minimizes conduction losses and improves overall efficiency.
With fast switching capabilities, it is ideal for high-frequency applications. The ISL9R3060P2 also incorporates a robust package design that enhances thermal performance, allowing for efficient heat dissipation during operation. Its gate threshold voltage is optimized for reliable performance in various circuit conditions.
Overall, the ISL9R3060P2 is a versatile component that provides excellent performance for engineers looking to optimize power efficiency in their designs.
With fast switching capabilities, it is ideal for high-frequency applications. The ISL9R3060P2 also incorporates a robust package design that enhances thermal performance, allowing for efficient heat dissipation during operation. Its gate threshold voltage is optimized for reliable performance in various circuit conditions.
Overall, the ISL9R3060P2 is a versatile component that provides excellent performance for engineers looking to optimize power efficiency in their designs.
Features
The ISL9R3060P2 is a high-performance N-channel MOSFET designed for various applications, including DC-DC converters, power management, and motor drives. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (VDS) of 60V, making it suitable for low to medium voltage applications.
2. Current Rating: The MOSFET can handle continuous drain currents of up to 30A, providing ample power for demanding applications.
3. RDS(on): It boasts a low on-resistance (RDS(on)) value, typically around 10 mΩ, which helps reduce power losses and improve efficiency.
4. Fast Switching: Designed for rapid switching speeds, it enhances performance in high-frequency applications.
5. Thermal Performance: The package is optimized for heat dissipation, allowing it to operate effectively under high thermal conditions.
6. Package Type: Typically available in a DPAK or similar package for easy integration into circuit designs.
Overall, the ISL9R3060P2 is a robust choice for power electronics engineers seeking efficient and reliable MOSFET solutions.
1. Voltage Rating: It supports a maximum drain-source voltage (VDS) of 60V, making it suitable for low to medium voltage applications.
2. Current Rating: The MOSFET can handle continuous drain currents of up to 30A, providing ample power for demanding applications.
3. RDS(on): It boasts a low on-resistance (RDS(on)) value, typically around 10 mΩ, which helps reduce power losses and improve efficiency.
4. Fast Switching: Designed for rapid switching speeds, it enhances performance in high-frequency applications.
5. Thermal Performance: The package is optimized for heat dissipation, allowing it to operate effectively under high thermal conditions.
6. Package Type: Typically available in a DPAK or similar package for easy integration into circuit designs.
Overall, the ISL9R3060P2 is a robust choice for power electronics engineers seeking efficient and reliable MOSFET solutions.
Package
The ISL9R3060P2 is packaged in a TO-247 form factor. This package type is designed for high-power applications, providing efficient thermal performance and robust electrical connections.
Pinout
The ISL9R3060P2 is a N-channel MOSFET designed for high-efficiency power applications. It features a total of 8 pins. The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET operation.
2. Drain (D) - The terminal through which the load current flows.
3. Source (S) - The terminal connected to ground or the lower potential in the circuit.
The specific configuration may vary slightly based on the packaging (e.g., TO-220 or DPAK), but the primary functions remain the same. It is commonly used in applications such as switching power supplies, motor drivers, and other high current, high voltage systems due to its low on-resistance and high efficiency. Always refer to the specific datasheet for detailed pinout and electrical characteristics.
1. Gate (G) - Controls the MOSFET operation.
2. Drain (D) - The terminal through which the load current flows.
3. Source (S) - The terminal connected to ground or the lower potential in the circuit.
The specific configuration may vary slightly based on the packaging (e.g., TO-220 or DPAK), but the primary functions remain the same. It is commonly used in applications such as switching power supplies, motor drivers, and other high current, high voltage systems due to its low on-resistance and high efficiency. Always refer to the specific datasheet for detailed pinout and electrical characteristics.
Manufacturer
The ISL9R3060P2 is manufactured by Renesas Electronics Corporation. Renesas is a Japanese semiconductor company that specializes in microcontrollers, analog, power, and system-on-chip (SoC) solutions. They serve various industries, including automotive, industrial, and consumer electronics. Renesas is known for its focus on advanced semiconductor technologies and integrated solutions, enabling innovation in various applications such as automotive safety systems, industrial automation, and IoT devices. The company aims to provide high-performance, energy-efficient products to meet the evolving needs of its customers.
Application
The ISL9R3060P2 is a high-performance N-channel MOSFET primarily used in power management applications such as DC-DC converters, motor drives, and power supply circuits. Its low on-resistance and high-speed switching capabilities make it suitable for efficiency-critical applications in automotive, industrial, and consumer electronics, particularly for applications requiring robust thermal performance and reliability.
Equivalent
The ISL9R3060P2 is a high-performance N-channel MOSFET. Equivalent products include the Infineon IRF3205, STMicroelectronics STP30NF10, and Vishay SiA60DP. Always verify specifications like voltage, current rating, and RDS(on) before substituting.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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