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ISL6617AFRZ-T
IC PWM INPUT
- メーカー
- Mfr。パート #ISL6617AFRZ-T
- パッケージ DFN10
- データシート
- 在庫中5476
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Package | Tape & Reel (TR) |
| ProductStatus | Active |
| Applications | PWM Doubler |
| Current-Supply | 6mA |
| Voltage-Supply | 4.5V ~ 5.5V |
| OperatingTemperature | -40°C ~ 125°C |
| MountingType | Surface Mount |
| Package/Case | 10-VFDFN Exposed Pad |
概要
Description
The ISL6617AFRZ-T is a synchronous MOSFET driver used in computing and data storage applications to enhance the efficiency and performance of power supply circuits. It is designed to work with both high-side and low-side N-channel MOSFETs, facilitating efficient power delivery in synchronous rectification applications. The device features a high-frequency driver with a 3 A sink current capability, ensuring fast switching speeds and improved power conversion efficiency.
Key features of the ISL6617AFRZ-T include adaptive dead-time control to minimize body diode conduction losses, protection mechanisms such as undervoltage lockout, and bootstrapped power supply to drive the high-side MOSFET. Its compact 8-pin SOIC package and wide operating temperature range make it suitable for various power supply designs. The device is commonly used in motherboards, graphics cards, and servers where efficient DC-DC conversion is critical.
Key features of the ISL6617AFRZ-T include adaptive dead-time control to minimize body diode conduction losses, protection mechanisms such as undervoltage lockout, and bootstrapped power supply to drive the high-side MOSFET. Its compact 8-pin SOIC package and wide operating temperature range make it suitable for various power supply designs. The device is commonly used in motherboards, graphics cards, and servers where efficient DC-DC conversion is critical.
Features
The ISL6617AFRZ-T is a synchronous MOSFET driver designed to complement multiphase controllers in desktop and server applications. Key features include:
1. Dual MOSFET Drive Capability: Capable of driving both high-side and low-side N-channel MOSFETs, enhancing the efficiency of power conversion.
2. Adaptive Shoot-Through Protection: Minimizes dead time and prevents both MOSFETs from conducting simultaneously, reducing losses and enhancing reliability.
3. High-Speed Operation: Designed for high-frequency switching applications, ensuring quick response and efficient power delivery.
4. Integrated Bootstrap Diode: Simplifies the design by providing a built-in bootstrap diode, facilitating the generation of the required gate drive voltage for the high-side MOSFET.
5. Wide Input Voltage Range: Supports a broad range of input voltages, increasing its versatility in various power supply designs.
6. Thermal Protection: Includes thermal shutdown features to protect against overheating, ensuring longevity and stability of the device.
These features make the ISL6617AFRZ-T well-suited for efficient power management in high-performance computing environments.
1. Dual MOSFET Drive Capability: Capable of driving both high-side and low-side N-channel MOSFETs, enhancing the efficiency of power conversion.
2. Adaptive Shoot-Through Protection: Minimizes dead time and prevents both MOSFETs from conducting simultaneously, reducing losses and enhancing reliability.
3. High-Speed Operation: Designed for high-frequency switching applications, ensuring quick response and efficient power delivery.
4. Integrated Bootstrap Diode: Simplifies the design by providing a built-in bootstrap diode, facilitating the generation of the required gate drive voltage for the high-side MOSFET.
5. Wide Input Voltage Range: Supports a broad range of input voltages, increasing its versatility in various power supply designs.
6. Thermal Protection: Includes thermal shutdown features to protect against overheating, ensuring longevity and stability of the device.
These features make the ISL6617AFRZ-T well-suited for efficient power management in high-performance computing environments.
Package
The ISL6617AFRZ-T is typically available in a 10-lead DFN (Dual Flat No-Lead) package.
Manufacturer
The ISL6617AFRZ-T is manufactured by Renesas Electronics Corporation. Renesas is a Japanese semiconductor company that designs and manufactures a variety of electronic components, including microcontrollers, system-on-chip (SoC) solutions, and power management integrated circuits (PMICs). It serves multiple industries such as automotive, industrial, home electronics, and information communication technology, providing solutions that support smart society developments.
Application
The ISL6617AFRZ-T is a dual MOSFET driver used in computing and communication equipment. Its primary application areas include voltage regulation modules (VRMs) and DC-DC converters for CPUs, GPUs, and high-performance ASICs. It is designed for synchronous rectification, enhancing efficiency in power supply designs, particularly in motherboards, servers, and networking equipment.
Equivalent
The ISL6617AFRZ-T is a MOSFET driver. Equivalent products from other manufacturers include the Texas Instruments UCC27201, ON Semiconductor NCP5181, and Maxim Integrated MAX8744. When selecting an equivalent, ensure compatibility in terms of voltage, current ratings, and package type, as well as functional features such as propagation delay and drive strength. Always check the datasheets to confirm suitability for your specific application.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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