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IS43DR16640C-25DBL
IC DRAM 1GBIT PARALLEL 84TWBGA
- メーカー
- Mfr。パート #IS43DR16640C-25DBL
- パッケージ 84-TFBGA
- データシート IS43DR16640C-25DBL DataSheet
- 在庫中5558
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仕様
| Package | Tray |
| ProductStatus | Active |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM - DDR2 |
| MemorySize | 1Gb (64M x 16) |
| MemoryInterface | Parallel |
| ClockFrequency | 400 MHz |
| WriteCycleTime-WordPage | 15ns |
| AccessTime | 400 ps |
| Voltage-Supply | 1.7V ~ 1.9V |
| OperatingTemperature | 0°C ~ 85°C (TC) |
| MountingType | Surface Mount |
| Package/Case | 84-TFBGA |
概要
Description
The IS43DR16640C-25DBL is a high-performance 64Mb DRAM (Dynamic Random Access Memory) chip produced by Integrated Silicon Solution, Inc. It is designed for applications requiring fast data access and efficient power consumption.
Key features include:
- Organization: 64 Meg x 4 bits, allowing it to store significant amounts of data.
- Speed: Operates at a clock frequency of 25 MHz, suitable for various embedded systems and consumer electronics.
- Low Power Consumption: Designed for energy efficiency, making it ideal for battery-operated devices.
- Interface: It employs a synchronous interface, which enhances performance through intelligent timing control.
This DRAM is commonly used in applications such as networking equipment, portable devices, and other systems that demand reliable memory performance. Overall, the IS43DR16640C-25DBL is a versatile memory solution that balances speed, capacity, and power efficiency.
Key features include:
- Organization: 64 Meg x 4 bits, allowing it to store significant amounts of data.
- Speed: Operates at a clock frequency of 25 MHz, suitable for various embedded systems and consumer electronics.
- Low Power Consumption: Designed for energy efficiency, making it ideal for battery-operated devices.
- Interface: It employs a synchronous interface, which enhances performance through intelligent timing control.
This DRAM is commonly used in applications such as networking equipment, portable devices, and other systems that demand reliable memory performance. Overall, the IS43DR16640C-25DBL is a versatile memory solution that balances speed, capacity, and power efficiency.
Features
The IS43DR16640C-25DBL is a DDR3 SDRAM memory module with the following key features:
1. Capacity: 64 Megabits (8 Megabytes) per chip, with configurations available for larger memory modules.
2. Data Rate: Operates at 800 MT/s (Mega Transfers per second).
3. Speed: It has a speed grade of 25 nanoseconds, indicating its access timing characteristics.
4. Architecture: It utilizes a synchronous dynamic RAM (SDRAM) architecture, allowing for efficient burst data transfers.
5. Interface: Supports a 16-bit data bus width, which is standard for DDR3 interfaces.
6. Voltage: Operates at a low voltage of 1.5V, enhancing power efficiency.
7. Package: Typically available in a 54-ball FBGA (Fine Ball Grid Array) package, facilitating compact designs.
8. Compatibility: Designed for use in a variety of applications, including consumer electronics, networking, and industrial systems.
These features make the IS43DR16640C-25DBL suitable for high-performance computing applications.
1. Capacity: 64 Megabits (8 Megabytes) per chip, with configurations available for larger memory modules.
2. Data Rate: Operates at 800 MT/s (Mega Transfers per second).
3. Speed: It has a speed grade of 25 nanoseconds, indicating its access timing characteristics.
4. Architecture: It utilizes a synchronous dynamic RAM (SDRAM) architecture, allowing for efficient burst data transfers.
5. Interface: Supports a 16-bit data bus width, which is standard for DDR3 interfaces.
6. Voltage: Operates at a low voltage of 1.5V, enhancing power efficiency.
7. Package: Typically available in a 54-ball FBGA (Fine Ball Grid Array) package, facilitating compact designs.
8. Compatibility: Designed for use in a variety of applications, including consumer electronics, networking, and industrial systems.
These features make the IS43DR16640C-25DBL suitable for high-performance computing applications.
Package
The IS43DR16640C-25DBL is packaged in a 54-ball TFBGA (Thin Fine Ball Grid Array) format. This type of package is designed for compact applications, providing a low-profile and efficient footprint for high-density memory devices.
Pinout
The IS43DR16640C-25DBL is a 64Mb (8M x 8) DDR SDRAM device with a pin count of 54 pins. This memory chip operates at a 2.5V power supply voltage and is designed for high-speed operations, featuring a 25 ns cycle time.
Key functions of the IS43DR16640C-25DBL include:
1. Memory Storage: It provides dynamic random access memory for temporary data storage in computing applications.
2. Data Bus: It supports an 8-bit wide data bus for data transfer.
3. Input/Output: Pins are allocated for data input/output, address input, control signals (like RAS, CAS, WE), and clock signals.
4. Burst Read and Write: The device supports burst mode operations, allowing efficient data access patterns.
This memory chip is suitable for use in various applications, including consumer electronics, networking, and industrial systems.
Key functions of the IS43DR16640C-25DBL include:
1. Memory Storage: It provides dynamic random access memory for temporary data storage in computing applications.
2. Data Bus: It supports an 8-bit wide data bus for data transfer.
3. Input/Output: Pins are allocated for data input/output, address input, control signals (like RAS, CAS, WE), and clock signals.
4. Burst Read and Write: The device supports burst mode operations, allowing efficient data access patterns.
This memory chip is suitable for use in various applications, including consumer electronics, networking, and industrial systems.
Manufacturer
The IS43DR16640C-25DBL is manufactured by Integrated Silicon Solution Inc. (ISSI). ISSI is a semiconductor company that specializes in the design and manufacturing of high-performance memory products. Their product portfolio includes SRAM, DRAM, and flash memory devices, catering to a wide range of applications such as automotive, consumer electronics, telecommunications, and industrial markets. Founded in 1988, ISSI is known for its innovative memory solutions and has established a reputation for quality and reliability in the semiconductor industry.
Application
The IS43DR16640C-25DBL is a 64Mb DDR SDRAM memory chip used in various applications, including high-performance computing, telecommunications, networking equipment, and consumer electronics. It is suitable for use in graphics applications, mobile devices, and embedded systems where high-speed data processing and storage are required. Its low power consumption makes it ideal for battery-operated devices.
Equivalent
The IS43DR16640C-25DBL is a 64Mb DDR SDRAM memory chip. Equivalent products include:
1. MT46V64M16P-25
2. Hynix HY57V641620H
3. Samsung K4S641632H
4. Micron MT46V64M16P-25
Ensure compatibility with voltage, timing, and pin configurations when selecting alternatives.
1. MT46V64M16P-25
2. Hynix HY57V641620H
3. Samsung K4S641632H
4. Micron MT46V64M16P-25
Ensure compatibility with voltage, timing, and pin configurations when selecting alternatives.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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3. ワイヤー 転送
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