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IS43DR16320E-25DBLI
IC DRAM 512MBIT PAR 84TWBGA
- メーカー
- Mfr。パート #IS43DR16320E-25DBLI
- パッケージ
- データシート
- 在庫中5366
100% オリジナル &新しい
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365日の保証
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仕様
| Part Status | Active |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR2 |
| Memory Size | 512Mbit |
| Memory Organization | 32M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 15ns |
| Voltage - Supply | 1.7V ~ 1.9V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 84-TFBGA |
| Supplier Device Package | 84-TWBGA (8x12.5) |
| Base Product Number | IS43DR16320 |
| Clock Frequency | 400 MHz |
| Access Time | 400 ps |
概要
Description
The IS43DR16320E-25DBLI is a high-performance DRAM (Dynamic Random Access Memory) component designed for various electronic applications. It features a 16 Meg x 32 configuration, providing a total memory capacity of 512 Megabits. Operating at a clock frequency of 200 MHz, it supports a data rate of up to 400 Mbps, making it suitable for demanding applications such as networking, gaming, and high-speed data processing.
This DRAM is built using advanced 25nm technology, which enhances its efficiency and performance while reducing power consumption. It operates on a 3.3V power supply and includes features like a burst mode for improved data transfer rates. The “-BLI” suffix typically indicates a specific package type or grade, often denoting a lead-free, environmentally friendly option.
The IS43DR16320E-25DBLI is ideal for embedded systems and applications requiring reliable, high-speed memory, making it a popular choice among engineers and designers in the electronics industry.
This DRAM is built using advanced 25nm technology, which enhances its efficiency and performance while reducing power consumption. It operates on a 3.3V power supply and includes features like a burst mode for improved data transfer rates. The “-BLI” suffix typically indicates a specific package type or grade, often denoting a lead-free, environmentally friendly option.
The IS43DR16320E-25DBLI is ideal for embedded systems and applications requiring reliable, high-speed memory, making it a popular choice among engineers and designers in the electronics industry.
Features
The IS43DR16320E-25DBLI is a 2GB DDR3 SDRAM memory chip designed for high-performance applications. Here are its key features:
1. Memory Type: DDR3 SDRAM
2. Capacity: 2 Gigabits (GB)
3. Configuration: 1 x 16 bits
4. Speed: Operates at a data rate of up to 1600 MT/s (Mega Transfers per second)
5. Voltage: Operates at a core voltage of 1.5V, with support for 1.35V for low-power applications.
6. Package: 78-ball FBGA (Fine Ball Grid Array), making it suitable for compact designs.
7. Timing: CL=25 for improved efficiency in data access times.
8. Features: Supports burst lengths of 4 and 8, along with an asynchronous reset for enhanced flexibility.
9. Applications: Ideal for use in various computing devices, including laptops, desktops, and other embedded systems.
This chip effectively balances performance, power consumption, and form factor, making it a solid choice for modern memory needs.
1. Memory Type: DDR3 SDRAM
2. Capacity: 2 Gigabits (GB)
3. Configuration: 1 x 16 bits
4. Speed: Operates at a data rate of up to 1600 MT/s (Mega Transfers per second)
5. Voltage: Operates at a core voltage of 1.5V, with support for 1.35V for low-power applications.
6. Package: 78-ball FBGA (Fine Ball Grid Array), making it suitable for compact designs.
7. Timing: CL=25 for improved efficiency in data access times.
8. Features: Supports burst lengths of 4 and 8, along with an asynchronous reset for enhanced flexibility.
9. Applications: Ideal for use in various computing devices, including laptops, desktops, and other embedded systems.
This chip effectively balances performance, power consumption, and form factor, making it a solid choice for modern memory needs.
Package
The IS43DR16320E-25DBLI is packaged in a 78-ball TFBGA (Thin Fine Pitch Ball Grid Array) format. This package type allows for a compact design and efficient thermal dissipation, suitable for various applications in memory modules.
Pinout
The IS43DR16320E-25DBLI is a 1 Gigabit (128MB) DRAM device organized as 16 bits x 8 banks. It features a total of 54 pins. The primary functions of its pins include:
1. Data Pins (DQ0-DQ15): These are used for data input and output.
2. Address Pins (A0-A12): These are used to select memory locations.
3. Control Pins (CS, RAS, CAS, WE): Control signals for enabling the chip, row address strobe, column address strobe, and write enable.
4. Clock Pins (CLK, CLK#): Used for synchronizing data transfers.
5. Power Pins (VDD, VSS): Provide power supply and ground.
6. Chip Select Pins (CS): Used for chip enable/disable functionality.
7. Byte Enable Pins (BYTE): Allow control over data access in byte format.
This DRAM operates with a 25 ns access time and is designed for high-performance applications.
1. Data Pins (DQ0-DQ15): These are used for data input and output.
2. Address Pins (A0-A12): These are used to select memory locations.
3. Control Pins (CS, RAS, CAS, WE): Control signals for enabling the chip, row address strobe, column address strobe, and write enable.
4. Clock Pins (CLK, CLK#): Used for synchronizing data transfers.
5. Power Pins (VDD, VSS): Provide power supply and ground.
6. Chip Select Pins (CS): Used for chip enable/disable functionality.
7. Byte Enable Pins (BYTE): Allow control over data access in byte format.
This DRAM operates with a 25 ns access time and is designed for high-performance applications.
Manufacturer
The manufacturer of the IS43DR16320E-25DBLI is ISSI, or Integrated Silicon Solution, Inc. ISSI is a semiconductor company that specializes in the design and manufacture of high-performance memory products, including DRAM (Dynamic Random-Access Memory) and Flash memory. Founded in 1988 and headquartered in San Jose, California, ISSI serves a variety of markets, including telecommunications, automotive, industrial, and consumer electronics. The company is known for its innovative memory solutions and has a significant presence in the global semiconductor industry.
Application
The IS43DR16320E-25DBLI is a 2Gb DDR3 SDRAM memory chip used in various applications, including consumer electronics, telecommunications, networking equipment, and automotive systems. Its high-speed performance and low power consumption make it suitable for laptops, desktops, servers, and embedded systems in industrial applications.
Equivalent
The IS43DR16320E-25DBLI is a 2Gb DDR3 SDRAM chip. Equivalent products include:
1. Hynix H5TQ2G63AFR
2. Micron MT41J128M16HA
3. Samsung K4B4G1646D
4. Nanya NT5CB256M16DP
Ensure to verify specifications like speed, package type, and voltage before substituting.
1. Hynix H5TQ2G63AFR
2. Micron MT41J128M16HA
3. Samsung K4B4G1646D
4. Nanya NT5CB256M16DP
Ensure to verify specifications like speed, package type, and voltage before substituting.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
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3. ワイヤー 転送
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