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IS42S32160F-7BLI
IC DRAM 512MBIT PAR 90TFBGA
- メーカー
- Mfr。パート #IS42S32160F-7BLI
- パッケージ
- データシート
- 在庫中3174
100% オリジナル &新しい
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365日の保証
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仕様
| Part Status | Active |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 512Mbit |
| Memory Organization | 16M x 32 |
| Memory Interface | Parallel |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 90-TFBGA |
| Supplier Device Package | 90-TFBGA (8x13) |
| Base Product Number | IS42S32160 |
| Clock Frequency | 143 MHz |
| Access Time | 5.4 ns |
概要
Description
The IS42S32160F-7BLI is a 2Gb (256MB) DDR3 SDRAM memory chip manufactured by Integrated Silicon Solution, Inc. (ISSI). It features a 16-bit data width and operates at a memory clock speed of up to 1066 MT/s (mega-transfers per second). The chip is compatible with a 1.5V power supply, making it suitable for a wide range of applications, including consumer electronics, networking equipment, and automotive systems.
The IS42S32160F-7BLI is designed in a standard 78-ball FBGA (Fine Ball Grid Array) package, which allows for efficient space utilization on PCB layouts. It supports various features such as burst read/write operations, adjustable burst lengths, and an easy-to-use interface for seamless integration into existing systems. The device is noted for its reliability and performance, making it a popular choice for applications requiring high-speed memory access and efficient power consumption. Overall, the IS42S32160F-7BLI represents a versatile solution for modern electronic designs.
The IS42S32160F-7BLI is designed in a standard 78-ball FBGA (Fine Ball Grid Array) package, which allows for efficient space utilization on PCB layouts. It supports various features such as burst read/write operations, adjustable burst lengths, and an easy-to-use interface for seamless integration into existing systems. The device is noted for its reliability and performance, making it a popular choice for applications requiring high-speed memory access and efficient power consumption. Overall, the IS42S32160F-7BLI represents a versatile solution for modern electronic designs.
Features
The IS42S32160F-7BLI is a 2Gb (256MB) DDR2 SDRAM memory chip. Key features include:
1. Density: 2 Gigabits organized as 256MB x 16.
2. Speed: Operates at a clock frequency of up to 400 Mbps, with data rates of DDR2.
3. Interface: 16-bit data interface, suitable for various applications requiring high-speed memory.
4. Voltage: Operates at a low supply voltage of 1.8V, enhancing power efficiency.
5. Package: Typically available in a 54-ball FBGA (Fine Ball Grid Array) package, facilitating compact designs.
6. Latency: Offers low latency for improved performance in read/write operations.
7. Burst Length: Supports burst lengths of 4 and 8, optimizing data transfer rates.
8. Applications: Commonly used in consumer electronics, networking equipment, and computing systems.
This memory chip is designed for reliability and efficiency in high-performance applications.
1. Density: 2 Gigabits organized as 256MB x 16.
2. Speed: Operates at a clock frequency of up to 400 Mbps, with data rates of DDR2.
3. Interface: 16-bit data interface, suitable for various applications requiring high-speed memory.
4. Voltage: Operates at a low supply voltage of 1.8V, enhancing power efficiency.
5. Package: Typically available in a 54-ball FBGA (Fine Ball Grid Array) package, facilitating compact designs.
6. Latency: Offers low latency for improved performance in read/write operations.
7. Burst Length: Supports burst lengths of 4 and 8, optimizing data transfer rates.
8. Applications: Commonly used in consumer electronics, networking equipment, and computing systems.
This memory chip is designed for reliability and efficiency in high-performance applications.
Package
The IS42S32160F-7BLI is packaged in a 54-ball FBGA (Fine Ball Grid Array) form factor. This package type is designed for high-density memory applications, offering a compact footprint and excellent thermal and electrical performance.
Pinout
The IS42S32160F-7BLI is a 3.2Gb (Gigabit) DDR3 SDRAM memory chip with a pin count of 78 pins. It is organized as 2Gb x 16 bits and operates with a supply voltage of 1.5V.
The primary functions of the pins include:
- Data pins (DQ0-DQ15): Used for data input/output.
- Address pins (A0-A12): To select rows and columns in the memory array.
- Bank address pins (BA0, BA1): To select the bank within the memory.
- Control pins (CS, RAS, CAS, WE): For controlling read/write operations and memory access.
- Clock pin (CLK): Synchronization for data transfer.
- Chip Select (CS): Activates the chip.
- Refresh pin (REF): Used for refreshing the memory.
This configuration allows for efficient data storage and access, making the IS42S32160F suitable for various applications in computing and electronics.
The primary functions of the pins include:
- Data pins (DQ0-DQ15): Used for data input/output.
- Address pins (A0-A12): To select rows and columns in the memory array.
- Bank address pins (BA0, BA1): To select the bank within the memory.
- Control pins (CS, RAS, CAS, WE): For controlling read/write operations and memory access.
- Clock pin (CLK): Synchronization for data transfer.
- Chip Select (CS): Activates the chip.
- Refresh pin (REF): Used for refreshing the memory.
This configuration allows for efficient data storage and access, making the IS42S32160F suitable for various applications in computing and electronics.
Manufacturer
The IS42S32160F-7BLI is manufactured by ISSI (Integrated Silicon Solution, Inc.), a semiconductor company specializing in memory solutions. ISSI focuses on designing and producing various types of memory products, including SRAM, DRAM, and FLASH memory. The company serves a wide range of markets, including automotive, telecommunications, consumer electronics, and industrial applications. ISSI is known for its innovation and quality in memory products, catering to the growing demands of the electronics industry.
Application
The IS42S32160F-7BLI is a 2Gb DDR3 SDRAM memory chip primarily used in applications such as consumer electronics, including smartphones, tablets, and laptops. It is suitable for networking equipment, industrial automation, automotive systems, and gaming devices, providing high-speed data processing and efficient power consumption for various computing tasks.
Equivalent
The IS42S32160F-7BLI is a 32Mb (4MB) DDR2 SDRAM chip. Equivalent products include:
1. MT47H64M16 (Micron)
2. K4T1G164EB (Samsung)
3. Hynix H5TQ2G83AFR (SK Hynix)
Always verify compatibility and specifications for your specific application.
1. MT47H64M16 (Micron)
2. K4T1G164EB (Samsung)
3. Hynix H5TQ2G83AFR (SK Hynix)
Always verify compatibility and specifications for your specific application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
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1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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