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IS42S32160F-6BLI
IC DRAM 512MBIT PARALLEL 90TFBGA
- メーカー
- Mfr。パート #IS42S32160F-6BLI
- パッケージ 90-TFBGA
- データシート IS42S32160F-6BLI DataSheet
- 在庫中5475
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仕様
| Package | Tray |
| ProductStatus | Active |
| MemoryType | Volatile |
| MemoryFormat | DRAM |
| Technology | SDRAM |
| MemorySize | 512Mb (16M x 32) |
| MemoryInterface | Parallel |
| ClockFrequency | 167 MHz |
| AccessTime | 5.4 ns |
| Voltage-Supply | 3V ~ 3.6V |
| OperatingTemperature | -40°C ~ 85°C (TA) |
| MountingType | Surface Mount |
| Package/Case | 90-TFBGA |
概要
Description
The IS42S32160F-6BLI is a 32 Megabit (4 Megabyte) DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) chip developed by ISMT. It is organized as 2x16 bits, providing high-speed data transfer rates suitable for various applications, including consumer electronics, telecommunications, and computing devices.
Key features include a 6ns cycle time, operating voltage of 1.5V, and support for multiple data rates up to 1600 MT/s. The device is designed to operate with a simple interface and is compatible with various DDR3 standards. Additionally, it incorporates advanced power-saving modes, making it suitable for energy-efficient designs.
The IS42S32160F-6BLI is available in a compact 78-ball FBGA (Fine Ball Grid Array) package, facilitating easy integration into compact circuit designs. Overall, this memory chip provides reliable performance and efficiency, making it an ideal choice for applications requiring moderate memory capacity and speed.
Key features include a 6ns cycle time, operating voltage of 1.5V, and support for multiple data rates up to 1600 MT/s. The device is designed to operate with a simple interface and is compatible with various DDR3 standards. Additionally, it incorporates advanced power-saving modes, making it suitable for energy-efficient designs.
The IS42S32160F-6BLI is available in a compact 78-ball FBGA (Fine Ball Grid Array) package, facilitating easy integration into compact circuit designs. Overall, this memory chip provides reliable performance and efficiency, making it an ideal choice for applications requiring moderate memory capacity and speed.
Features
The IS42S32160F-6BLI is a 32Mb (4MB) asynchronous SRAM chip from Integrated Silicon Solution, Inc. Key features include:
1. Organization: 4M x 8 bits, allowing for a total of 32Mb storage capacity.
2. Access Time: Fast access time of 6 ns, suitable for high-speed applications.
3. Operating Voltage: Typically operates at a voltage of 3.0V to 3.6V.
4. Package Type: Available in a 48-pin TSOP II package, facilitating compact design.
5. Low Power Consumption: Designed for low-power operation, making it ideal for battery-operated devices.
6. Asynchronous Operation: Supports asynchronous read and write operations, providing flexibility in data processing.
7. Data Retention: Maintains data integrity during power-down conditions.
This chip is commonly used in a variety of applications, including networking equipment, telecommunications, and consumer electronics, where high-speed data processing is essential.
1. Organization: 4M x 8 bits, allowing for a total of 32Mb storage capacity.
2. Access Time: Fast access time of 6 ns, suitable for high-speed applications.
3. Operating Voltage: Typically operates at a voltage of 3.0V to 3.6V.
4. Package Type: Available in a 48-pin TSOP II package, facilitating compact design.
5. Low Power Consumption: Designed for low-power operation, making it ideal for battery-operated devices.
6. Asynchronous Operation: Supports asynchronous read and write operations, providing flexibility in data processing.
7. Data Retention: Maintains data integrity during power-down conditions.
This chip is commonly used in a variety of applications, including networking equipment, telecommunications, and consumer electronics, where high-speed data processing is essential.
Package
The IS42S32160F-6BLI is a 256Mb DDR3 SDRAM memory chip, packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. This package type is designed for high-density applications, providing efficient thermal management and space-saving benefits in electronic devices.
Pinout
The IS42S32160F-6BLI is a 32M x 16-bit (512Mbit) synchronous dynamic random-access memory (SDRAM) chip. It features a pin count of 54 pins in a TSOP-II (Thin Small Outline Package) configuration.
Key functions of the IS42S32160F-6BLI include:
1. Data Storage: It stores data in a 32M x 16-bit array.
2. Synchronous Operation: Operates synchronously with the clock signal, providing high-speed access.
3. Burst Read/Write: Supports burst read and write operations to enhance throughput.
4. Low Power Consumption: Designed for low power operation, making it suitable for battery-powered devices.
5. Multiple Bank Operation: Features multiple banks for concurrent operations, improving efficiency in data access.
This chip is commonly used in applications such as consumer electronics, networking equipment, and other devices requiring fast and efficient memory solutions.
Key functions of the IS42S32160F-6BLI include:
1. Data Storage: It stores data in a 32M x 16-bit array.
2. Synchronous Operation: Operates synchronously with the clock signal, providing high-speed access.
3. Burst Read/Write: Supports burst read and write operations to enhance throughput.
4. Low Power Consumption: Designed for low power operation, making it suitable for battery-powered devices.
5. Multiple Bank Operation: Features multiple banks for concurrent operations, improving efficiency in data access.
This chip is commonly used in applications such as consumer electronics, networking equipment, and other devices requiring fast and efficient memory solutions.
Manufacturer
The IS42S32160F-6BLI is manufactured by Integrated Silicon Solution, Inc. (ISSI), a semiconductor company based in the United States. ISSI specializes in designing and producing a wide range of memory products, including SRAM, DRAM, and Flash memory. The company focuses on providing high-performance, reliable memory solutions for various applications, including consumer electronics, automotive, telecommunications, and industrial markets. Established in 1988, ISSI has built a reputation for innovation and quality in the semiconductor industry.
Application
The IS42S32160F-6BLI is a 2Gb DDR3 SDRAM memory chip primarily used in applications such as consumer electronics, mobile devices, embedded systems, networking equipment, and industrial applications. It provides high-speed data processing and is suitable for computing devices, gaming consoles, and automotive systems where efficient memory performance is essential.
Equivalent
The IS42S32160F-6BLI chip is a 32Mb (4MB) DDR SDRAM. Equivalent products include the Micron MT48LC16M16A2P-75, Samsung K4S641632E, and Hynix HY57V161620G. Always verify specifications like speed, voltage, and package type for compatibility before substitution.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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