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IS42S16160J-7BL
IC DRAM 256MBIT PAR 54TFBGA
- メーカー
- Mfr。パート #IS42S16160J-7BL
- パッケージ
- データシート
- 在庫中6085
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365日の保証
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仕様
| Part Status | Active |
| DigiKey Programmable | Not Verified |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM |
| Memory Size | 256Mbit |
| Memory Organization | 16M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 143 MHz |
| Access Time | 5.4 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 54-TFBGA |
| Supplier Device Package | 54-TFBGA (8x8) |
| Base Product Number | IS42S16160 |
概要
Description
The IS42S16160J-7BL is a 1Gb DDR2 SDRAM (Synchronous Dynamic Random Access Memory) chip designed for high-performance applications. It features a 16-bit data width and operates at a maximum clock frequency of 400 MHz, providing a data transfer rate of up to 800 MT/s (million transfers per second). The device is built using a 90nm process technology and comes in a BGA (Ball Grid Array) package for efficient thermal management and compact design.
Key specifications include a voltage supply of 1.8V, with low power consumption making it suitable for mobile and embedded applications. It supports various operating modes, including burst read and write operations to enhance performance. The IS42S16160J-7BL is often used in consumer electronics, networking equipment, and other devices requiring fast memory solutions. Its reliability and speed make it an ideal choice for both industrial and commercial applications.
Key specifications include a voltage supply of 1.8V, with low power consumption making it suitable for mobile and embedded applications. It supports various operating modes, including burst read and write operations to enhance performance. The IS42S16160J-7BL is often used in consumer electronics, networking equipment, and other devices requiring fast memory solutions. Its reliability and speed make it an ideal choice for both industrial and commercial applications.
Features
The IS42S16160J-7BL is a DRAM component featuring a 16 Meg x 16 bit architecture, designed for high-performance applications. Key features include:
1. Memory Type: Asynchronous DRAM (Dynamic Random Access Memory).
2. Organization: 16 Mbit density organized as 1M × 16 bits.
3. Speed Grade: 7 ns access time for efficient data retrieval.
4. Voltage Supply: Operates on a standard 3.3V supply.
5. Temperature Range: Industrial temperature range (-40°C to +85°C).
6. Package Type: Available in a 54-pin TSOP II (Thin Small Outline Package) for space-saving designs.
7. Functionality: Supports burst mode and random access for flexible performance in various applications.
8. Applications: Ideal for networking equipment, telecommunications, and industrial devices requiring reliable memory solutions.
This chip is well-suited for applications requiring stable performance and data integrity under varying conditions.
1. Memory Type: Asynchronous DRAM (Dynamic Random Access Memory).
2. Organization: 16 Mbit density organized as 1M × 16 bits.
3. Speed Grade: 7 ns access time for efficient data retrieval.
4. Voltage Supply: Operates on a standard 3.3V supply.
5. Temperature Range: Industrial temperature range (-40°C to +85°C).
6. Package Type: Available in a 54-pin TSOP II (Thin Small Outline Package) for space-saving designs.
7. Functionality: Supports burst mode and random access for flexible performance in various applications.
8. Applications: Ideal for networking equipment, telecommunications, and industrial devices requiring reliable memory solutions.
This chip is well-suited for applications requiring stable performance and data integrity under varying conditions.
Package
The IS42S16160J-7BL is packaged in a standard 54-ball TSOP II (Thin Small Outline Package) format. This package type is designed for efficient space usage and thermal performance in memory applications.
Pinout
The IS42S16160J-7BL is a 16Mb DRAM (Dynamic Random Access Memory) chip with a pin count of 48. It is organized as 1M x 16 bits and operates at a speed of 7ns.
The pin functions include:
1. Address Pins (A0-A19): Used to select rows and columns in the memory array.
2. Data Pins (DQ0-DQ15): 16 bi-directional data lines for data input and output.
3. Control Signals:
- CS (Chip Select): Activates the chip for operation.
- RAS (Row Address Strobe): Used to latch the row address.
- CAS (Column Address Strobe): Used to latch the column address.
- WE (Write Enable): Controls write operations.
4. Clock Pins (CLK): For synchronous operation.
5. Power Supply Pins (VDD, VSS): Supply voltage and ground.
This configuration allows the IS42S16160J-7BL to function efficiently in various memory applications.
The pin functions include:
1. Address Pins (A0-A19): Used to select rows and columns in the memory array.
2. Data Pins (DQ0-DQ15): 16 bi-directional data lines for data input and output.
3. Control Signals:
- CS (Chip Select): Activates the chip for operation.
- RAS (Row Address Strobe): Used to latch the row address.
- CAS (Column Address Strobe): Used to latch the column address.
- WE (Write Enable): Controls write operations.
4. Clock Pins (CLK): For synchronous operation.
5. Power Supply Pins (VDD, VSS): Supply voltage and ground.
This configuration allows the IS42S16160J-7BL to function efficiently in various memory applications.
Manufacturer
The IS42S16160J-7BL is manufactured by ISSI (Integrated Silicon Solution, Inc.). ISSI is a semiconductor company that specializes in developing high-performance memory products, including DRAM and Flash memory solutions. Founded in 1988 and headquartered in San Jose, California, ISSI focuses on providing advanced memory technologies for a range of applications, including automotive, industrial, consumer electronics, and communications. The company is known for its commitment to quality and innovation in memory design, catering to the growing demands of the electronics market.
Application
The IS42S16160J-7BL is a 16Mb (2M x 8) synchronous dynamic random-access memory (SDRAM) typically used in applications such as consumer electronics, networking equipment, industrial automation, and mobile devices. It is suitable for data buffering, temporary storage, and memory expansion in systems requiring high-speed data processing and efficient memory management.
Equivalent
The IS42S16160J-7BL is a 16Mb (2Mx8) DRAM chip. Equivalent products include:
1. MT48LC16M8A2P-75
2. Hynix HY57V641620HGL-7
3. Samsung K4S641632E-7
4. Nanya NT5DS16M16D-7
Always verify specifications for compatibility before substitution.
1. MT48LC16M8A2P-75
2. Hynix HY57V641620HGL-7
3. Samsung K4S641632E-7
4. Nanya NT5DS16M16D-7
Always verify specifications for compatibility before substitution.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100%前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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