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IS25WP064D-JBLE-TR

Name: IS25WP064D-JBLE-TR
Rating: 4.7 (12 reviews)

IC FLASH 64MBIT SPI/QUAD 8SOIC

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Mfr。パート #IS25WP064D-JBLE-TR
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仕様

Part Status	Active
Base Product Number	IS25WP064
DigiKey Programmable	Not Verified
Memory Type	Non-Volatile
Memory Format	FLASH
Technology	FLASH - NOR (SLC)
Memory Size	64Mbit
Memory Organization	8M x 8
Memory Interface	SPI - Quad I/O, QPI, DTR
Clock Frequency	166 MHz
Write Cycle Time - Word, Page	40µs, 800µs
Voltage - Supply	1.65V ~ 1.95V
Operating Temperature	-40°C ~ 105°C (TA)
Mounting Type	Surface Mount
Package	8-SOIC (0.209", 5.30mm Width)
Supplier Device Package	8-SOIC
Packaging	Cut Tape (CT), Tape & Reel (TR)
Grade	Automotive
Qualification	AEC-Q100

概要

Description

IS25WP064D-JBLE-TR is ISSI’s 64-Mbit serial NOR flash memory with a SPI interface. It’s designed for storing firmware, code, and data in embedded systems and can serve as boot storage for microcontrollers/SoCs.
Key features:
- 64 Mbit (8 MBytes) non-volatile storage
- SPI-compatible interface supporting standard, dual, and quad I/O modes
- Fast read; page programming (typical 256-byte pages)
- Sector/block erase
- Low power modes and deep power-down
- Security features such as write/block protection
Packaging/variant note:
- The -TR suffix indicates tape-and-reel packaging; -JBLE denotes the device variant/grade.
Typical applications:
- Firmware storage and execution
- Data logging and bulk storage in embedded systems
For exact electrical specs (supply voltage, timing, temperature range, package options) and command set details, consult the IS25WP064D-JBLE-TR datasheet on ISSI’s website.

Features

IS25WP064D-JBLE-TR is a 64‑Mbit (8 MB) serial flash from ISSI. Key features:
- Density: 64 Mbit (8 MB) of non-volatile flash.
- Interface: SPI-compatible; supports standard SPI and Dual/Quad I/O modes for higher throughput.
- Voltage: 2.7–3.6 V operation.
- Temperature: Industrial range option available (-40 °C to +85 °C).
- Memory organization: 256-byte pages; 4 KB sectors; 32 KB/64 KB blocks; chip erase supported.
- Read/Write: Fast/continuous read capability; Page program up to 256 bytes; Write Enable (WREN) required; write protection via WP# and status register.
- Power management: Deep Power-Down mode; standby/low active current.
- Endurance and retention: ~100k P/E cycles; data retention typically ~20 years.
- Security: Block protection, per-block/top-bottom protection options via status register.
- Packaging: 8-pin device; -TR denotes Tape & Reel packaging (ready for automated assembly).
Note: exact speed grades and feature details may vary by package/variant; consult the datasheet for specific part revision.

Package

8-pin SOP (SOIC-8) package, Tape & Reel (TR) version.

Pinout

- Pin count: 8 pins (SOIC-8 / WSON-8, Tape-and-Release variant JBLE-TR).
- Function: 64-Mbit SPI/serial flash memory (IS25WP064D) used to store firmware/data. Pinout: 1 CS#, 2 SO (MISO), 3 WP#, 4 GND, 5 SI (MOSI), 6 SCLK, 7 VCC, 8 HOLD#. WP# and HOLD# are active-low controls for write protection and interface hold, respectively.

Manufacturer

- Manufacturer: Integrated Silicon Solution, Inc. (ISSI).
- What kind of company: A global semiconductor company specializing in memory ICs (such as serial Flash and DRAM) that designs and markets memory products.

Application

IS25WP064D-JBLE-TR is a 64-Mbit SPI NOR flash. Typical applications:
- Firmware storage and updates for microcontrollers/SoCs
- Bootloaders and startup code storage
- External flash memory for consumer electronics (printers, cameras, set-top boxes, wearables)
- Data logging and configuration storage for IoT and industrial equipment
- General external memory for embedded systems and development boards
- Automotive/industrial-grade variants available as required (temperature/qualification per device)

Equivalent

Equivalent 64 Mbit SPI NOR Flash devices (pin and command compatible considerations apply):
- Micron N25Q064A
- Macronix MX25U064E / MX25L064F
- Winbond W25Q64FV / W25Q64JV
- GigaDevice GD25Q64C (also GD25Q64B)
Note: verify voltage (2.7–3.6V), timing, and package in the final substitution.