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IRS2304STRPBF
IRS2304 - GATE DRIVER
- メーカー
- Mfr。パート #IRS2304STRPBF
- パッケージ SOP8
- データシート IRS2304STRPBF DataSheet
- 在庫中3316
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仕様
| Package | Bulk |
| ProductStatus | Active |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VILVIH | 0.7V, 2.3V |
| Current-PeakOutput(SourceSink) | 290mA, 600mA |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 70ns, 35ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概要
Description
The IRS2304STRPBF is a dual N-channel MOSFET driver IC, manufactured by Infineon Technologies. It is designed to efficiently drive power MOSFETs in various switching applications, such as motor drives, power supplies, and DC-DC converters. This IC is particularly useful for applications requiring high-speed switching and precise control.
Key features of the IRS2304STRPBF include a high-side and low-side gate driver, which allows it to control two MOSFETs in a half-bridge configuration. It operates with a supply voltage range typically from 10V to 20V and can output up to 1A of peak current to drive the gates of MOSFETs. The device also incorporates protection features such as under-voltage lockout (UVLO) to prevent operation under insufficient supply voltage conditions, and dead-time control to prevent shoot-through, which is when both the high-side and low-side MOSFETs are on simultaneously.
Overall, the IRS2304STRPBF is a versatile and reliable component for managing high-efficiency power conversion and drive applications.
Key features of the IRS2304STRPBF include a high-side and low-side gate driver, which allows it to control two MOSFETs in a half-bridge configuration. It operates with a supply voltage range typically from 10V to 20V and can output up to 1A of peak current to drive the gates of MOSFETs. The device also incorporates protection features such as under-voltage lockout (UVLO) to prevent operation under insufficient supply voltage conditions, and dead-time control to prevent shoot-through, which is when both the high-side and low-side MOSFETs are on simultaneously.
Overall, the IRS2304STRPBF is a versatile and reliable component for managing high-efficiency power conversion and drive applications.
Features
The IRS2304STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. It is designed to drive low-side and high-side N-channel MOSFETs and IGBTs. Key features include:
1. High Voltage Capability: It operates with a high voltage level up to 600V, making it suitable for a wide range of applications in power electronics.
2. Logic Input Compatibility: Compatible with standard logic level inputs, enabling easy interfacing with microcontrollers and other logic circuits.
3. Floating Channel Driver: It has a floating channel designed for bootstrap operation, which is fully operational up to the maximum voltage rating.
4. Under-Voltage Lockout (UVLO): Provides under-voltage lockout protection for both the high-side and low-side drivers, ensuring reliable operation.
5. Dead-time Protection: Built-in dead-time protection to prevent shoot-through, enhancing the reliability and efficiency of the driver.
6. Bootstrap Operation: Supports bootstrap circuitry to provide the gate drive voltage for the high-side MOSFETs.
7. Latch-Immune CMOS Technology: Utilizes latch-immune CMOS technology to improve robustness and performance.
These features make the IRS2304STRPBF appropriate for use in motor drives, power inverters, and other applications requiring efficient and reliable gate driving for high-voltage devices.
1. High Voltage Capability: It operates with a high voltage level up to 600V, making it suitable for a wide range of applications in power electronics.
2. Logic Input Compatibility: Compatible with standard logic level inputs, enabling easy interfacing with microcontrollers and other logic circuits.
3. Floating Channel Driver: It has a floating channel designed for bootstrap operation, which is fully operational up to the maximum voltage rating.
4. Under-Voltage Lockout (UVLO): Provides under-voltage lockout protection for both the high-side and low-side drivers, ensuring reliable operation.
5. Dead-time Protection: Built-in dead-time protection to prevent shoot-through, enhancing the reliability and efficiency of the driver.
6. Bootstrap Operation: Supports bootstrap circuitry to provide the gate drive voltage for the high-side MOSFETs.
7. Latch-Immune CMOS Technology: Utilizes latch-immune CMOS technology to improve robustness and performance.
These features make the IRS2304STRPBF appropriate for use in motor drives, power inverters, and other applications requiring efficient and reliable gate driving for high-voltage devices.
Package
The IRS2304STRPBF is a half-bridge gate driver IC, and it comes in an 8-pin SOIC package.
Pinout
The IRS2304STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver designed by Infineon Technologies. It is specifically used for driving half-bridge configurations. This device comes in an 8-pin SOIC package.
Here is a brief overview of the pin functions:
1. VCC: Supply voltage for the logic and low-side circuitry.
2. HIN: Logic input for controlling the high-side switch.
3. LIN: Logic input for controlling the low-side switch.
4. COM: Common ground for the logic and low-side circuitry.
5. LO: Low-side gate drive output.
6. VB: High-side floating supply voltage.
7. HO: High-side gate drive output.
8. VS: High-side floating supply return.
This device is used in various applications, including motor drives, power supplies, and inverters, due to its capability to provide efficient, reliable control of power devices in high-voltage environments.
Here is a brief overview of the pin functions:
1. VCC: Supply voltage for the logic and low-side circuitry.
2. HIN: Logic input for controlling the high-side switch.
3. LIN: Logic input for controlling the low-side switch.
4. COM: Common ground for the logic and low-side circuitry.
5. LO: Low-side gate drive output.
6. VB: High-side floating supply voltage.
7. HO: High-side gate drive output.
8. VS: High-side floating supply return.
This device is used in various applications, including motor drives, power supplies, and inverters, due to its capability to provide efficient, reliable control of power devices in high-voltage environments.
Manufacturer
The IRS2304STRPBF is manufactured by Infineon Technologies. Infineon is a global semiconductor company that designs and manufactures a wide range of semiconductor products. These products are used in various applications, including automotive, industrial power control, power management, and security solutions. Infineon is known for its innovation in power semiconductors, microcontrollers, sensors, and connectivity solutions. The company focuses on providing energy-efficient and sustainable technologies across different sectors.
Application
The IRS2304STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. It's primarily used in applications such as motor control, power supplies, lighting control, and inverter circuits. Its ability to drive high-voltage transistors makes it suitable for industrial and consumer electronics that require efficient power management and precise control.
Equivalent
The IRS2304STRPBF is a half-bridge driver IC. Equivalent or similar products may include:
1. L6384 by STMicroelectronics
2. FAN7382 by ON Semiconductor
3. IR2184 by Infineon Technologies
4. FAN7390 by ON Semiconductor
These alternatives offer similar functionalities, but it's essential to verify the specifications and application requirements for compatibility.
1. L6384 by STMicroelectronics
2. FAN7382 by ON Semiconductor
3. IR2184 by Infineon Technologies
4. FAN7390 by ON Semiconductor
These alternatives offer similar functionalities, but it's essential to verify the specifications and application requirements for compatibility.
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