IRS2101STRPBF

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IRS2101STRPBF

IC GATE DRVR HI/LOW SIDE 8SOIC

100% オリジナル &新しい

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仕様

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
DrivenConfiguration High-Side or Low-Side
ChannelType Independent
NumberofDrivers 2
GateType IGBT, N-Channel MOSFET
Voltage-Supply 10V ~ 20V
LogicVoltage-VILVIH 0.8V, 2.5V
Current-PeakOutput(SourceSink) 290mA, 600mA
InputType Non-Inverting
HighSideVoltage-Max(Bootstrap) 600 V
Rise/FallTime(Typ) 70ns, 35ns
OperatingTemperature -40°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SOIC (0.154, 3.90mm Width)

概要

Description

The IRS2101STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Manufactured by Infineon Technologies, this device is commonly used in various applications such as motor drives, power supplies, and DC-DC converters. It features under-voltage lockout protection, matched propagation delay for both channels, and a rugged design capable of handling up to 600V. The driver is designed to efficiently drive both N-channel MOSFETs and IGBTs, optimizing switching performance and reducing power losses.
The IRS2101STRPBF also includes an integrated bootstrap diode, simplifying the design and reducing the number of external components required. Its compact packaging and robust performance make it a popular choice for engineers looking to implement reliable and efficient power control systems. The driver operates over a wide range of temperatures, ensuring stability and performance in various environmental conditions.

Features

The IRS2101STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. Key features include:
1. High Voltage Capability: It can handle up to 600V, making it suitable for applications with high voltage requirements.
2. Gate Drive Capability: Provides gate drive for both high-side and low-side MOSFETs or IGBTs, enabling efficient control of high-power semiconductor devices.
3. Floating Channel Design: Allows for high-side and low-side gate driving, with a floating channel designed for bootstrap operation.
4. Bootstrap Operation: Supports bootstrap operation up to 600V, simplifying the design by using fewer external components.
5. Output Current: Capable of sourcing and sinking up to 210mA and 350mA respectively, ensuring adequate drive strength for most applications.
6. Delay Matching: Features matched propagation delay for both high and low-side drivers to ensure synchronized switching.
7. Under-Voltage Lockout (UVLO): Protects the system by preventing the gate driver from operating when the supply voltage is below the specified threshold.
8. Integrated Dead-Time Protection: Helps to prevent shoot-through in half-bridge applications by ensuring a safe delay between high-side and low-side switching.
These features make the IRS2101STRPBF ideal for applications like motor drives, power inverters, and switched-mode power supplies.

Package

The IRS2101STRPBF is housed in an SOIC-8 package, which is a small outline integrated circuit with 8 pins. This package type is commonly used for surface-mounted devices and provides a compact form factor suitable for various applications.

Pinout

The IRS2101STRPBF is an integrated high- and low-side driver IC from Infineon Technologies. It is typically used for driving MOSFETs and IGBTs in half-bridge configurations. The IRS2101STRPBF comes in an 8-pin SOIC (Small Outline Integrated Circuit) package.
Here’s a brief overview of its pin functions:
1. VCC: Supply voltage for the low-side driver.
2. VS: High-side floating supply return (source connection of the high-side MOSFET).
3. VB: High-side floating supply voltage.
4. HO: High-side gate drive output.
5. HS: High-side source connection (connects to the load).
6. LO: Low-side gate drive output.
7. COM: Common ground (reference for the low-side driver).
8. IN: Input signal for controlling the high- and low-side outputs.
The IRS2101STRPBF is designed to provide reliable level shifting and the necessary drive capability to control high-power switches efficiently. It supports a wide range of voltages and has built-in protection features such as under-voltage lockout to ensure robust performance in various applications.

Manufacturer

The IRS2101STRPBF is manufactured by Infineon Technologies AG. Infineon is a German semiconductor manufacturer that focuses on designing and producing a wide range of semiconductor solutions. The company is known for its expertise in automotive, industrial power control, power management, and digital security solutions. Infineon provides products that are integral to a variety of applications, including those in automotive electronics, industrial automation, consumer electronics, and communications.

Application

The IRS2101STRPBF is a high-voltage, high-speed power MOSFET and IGBT driver. It is commonly used in applications such as motor drives, power supplies, DC-DC converters, and Class D audio amplifiers. Its ability to efficiently drive power transistors makes it suitable for industrial and consumer electronics that require reliable high-voltage switching.

Equivalent

The IRS2101STRPBF is a half-bridge gate driver IC. Equivalent products include:
1. FAN7380 (ON Semiconductor)
2. IR2101 (Infineon Technologies)
3. L6386E (STMicroelectronics)
4. MCP14E10 (Microchip Technology)
5. UCC27712 (Texas Instruments)
Always verify specifications such as voltage, current, and features to ensure compatibility.

出荷

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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