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IRS2003STRPBF
IC GATE DRVR HALF-BRIDGE 8SOIC
- メーカー
- Mfr。パート #IRS2003STRPBF
- パッケージ SOIC-8
- データシート IRS2003STRPBF DataSheet
- 在庫中3619
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Not For New Designs |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VILVIH | 0.8V, 2.5V |
| Current-PeakOutput(SourceSink) | 290mA, 600mA |
| InputType | Inverting, Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 200 V |
| Rise/FallTime(Typ) | 70ns, 35ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | 8-SOIC (0.154, 3.90mm Width) |
概要
Description
IRS2003STRPBF appears to reference a specific electronic component, particularly an integrated circuit (IC) or MOSFET transistor. The naming convention suggests it might be a part of the semiconductor products from Infineon Technologies, which acquired International Rectifier (IR) in 2015. These components are typically used in power management applications such as motor drives, power supplies, and other electronic devices requiring efficient energy conversion and regulation.
The prefix "IRS" often indicates a component related to power management, while the numbers "2003" could denote a series or model number. "STR" might refer to specific features or packaging, and "PBF" usually signifies "Lead-Free," indicating compliance with environmental standards like RoHS that restrict the use of certain hazardous substances in electrical and electronic equipment.
For precise details, including pin configuration, electrical specifications, and application instructions, consulting the official datasheet from the manufacturer's website or product catalog would be necessary.
The prefix "IRS" often indicates a component related to power management, while the numbers "2003" could denote a series or model number. "STR" might refer to specific features or packaging, and "PBF" usually signifies "Lead-Free," indicating compliance with environmental standards like RoHS that restrict the use of certain hazardous substances in electrical and electronic equipment.
For precise details, including pin configuration, electrical specifications, and application instructions, consulting the official datasheet from the manufacturer's website or product catalog would be necessary.
Features
The IRS2003STRPBF is a high-side MOSFET driver IC designed for automotive and high-performance applications. It integrates several features that enhance its functionality and reliability:
1. High-Side Driver: It is capable of driving N-channel MOSFETs in high-side configurations, which are common in automotive and industrial applications.
2. Floating Channel Technology: The device can operate up to 200V, which allows it to handle high-voltage applications efficiently.
3. Integrated Bootstrap Diode: It includes a bootstrap diode, simplifying the design and reducing the number of external components required.
4. Undervoltage Lockout (UVLO): This feature ensures that the MOSFET driver operates only when the supply voltage is above a certain threshold, protecting the circuit from low-voltage malfunctions.
5. Fast Switching: The IRS2003STRPBF offers fast switching speeds, which helps improve the efficiency of the power MOSFET it drives.
6. Latch Immunity and ESD Protection: The device is designed to be immune to latch-up and includes electrostatic discharge (ESD) protection, enhancing its robustness in various environments.
These features make the IRS2003STRPBF suitable for demanding applications, including automotive powertrain and motor drive systems.
1. High-Side Driver: It is capable of driving N-channel MOSFETs in high-side configurations, which are common in automotive and industrial applications.
2. Floating Channel Technology: The device can operate up to 200V, which allows it to handle high-voltage applications efficiently.
3. Integrated Bootstrap Diode: It includes a bootstrap diode, simplifying the design and reducing the number of external components required.
4. Undervoltage Lockout (UVLO): This feature ensures that the MOSFET driver operates only when the supply voltage is above a certain threshold, protecting the circuit from low-voltage malfunctions.
5. Fast Switching: The IRS2003STRPBF offers fast switching speeds, which helps improve the efficiency of the power MOSFET it drives.
6. Latch Immunity and ESD Protection: The device is designed to be immune to latch-up and includes electrostatic discharge (ESD) protection, enhancing its robustness in various environments.
These features make the IRS2003STRPBF suitable for demanding applications, including automotive powertrain and motor drive systems.
Package
The IRS2003STRPBF is typically a semiconductor package type, commonly used by Infineon Technologies. It denotes a specific package style and pin configuration for electronic components, often used in industrial or automotive applications. For precise details on dimensions and specifications, refer to the component's datasheet or the manufacturer's documentation.
Pinout
The IRS2003STRPBF is a high-side gate driver IC with 8 pins. It is designed to drive high-side N-channel MOSFETs in a half-bridge or full-bridge configuration. Here’s a brief overview of its pin functions:
1. VCC: Supply voltage for the logic circuitry within the IC.
2. HIN: Logic input for controlling the high-side MOSFET.
3. LIN: Logic input for controlling the low-side MOSFET.
4. COM: Common ground reference for the IC.
5. VB: Bootstrap supply voltage needed for high-side driver operation.
6. HO: High-side output that connects to the gate of the high-side MOSFET.
7. VS: High-side floating supply return, typically connected to the source of the high-side MOSFET.
8. LO: Low-side output that connects to the gate of the low-side MOSFET.
The IRS2003STRPBF is used in various applications for efficient control of power stages in motor drives, inverters, and similar systems requiring high-frequency and high-voltage switching.
1. VCC: Supply voltage for the logic circuitry within the IC.
2. HIN: Logic input for controlling the high-side MOSFET.
3. LIN: Logic input for controlling the low-side MOSFET.
4. COM: Common ground reference for the IC.
5. VB: Bootstrap supply voltage needed for high-side driver operation.
6. HO: High-side output that connects to the gate of the high-side MOSFET.
7. VS: High-side floating supply return, typically connected to the source of the high-side MOSFET.
8. LO: Low-side output that connects to the gate of the low-side MOSFET.
The IRS2003STRPBF is used in various applications for efficient control of power stages in motor drives, inverters, and similar systems requiring high-frequency and high-voltage switching.
Manufacturer
The manufacturer of the IRS2003STRPBF is Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in a range of electronic solutions, including automotive, industrial power control, power management, digital security solutions, and more. The company is known for its innovations in producing integrated circuits, power semiconductors, sensors, and microcontrollers that serve a variety of applications in different industries. Infineon's products are widely used in enhancing energy efficiency, mobility, and security.
Application
The IRS2003STRPBF is an N-channel power MOSFET commonly used in various electronic applications. Its areas of application include power management systems, motor drives, automotive electronics, and industrial automation. It is suitable for use in high-efficiency switching applications, such as DC-DC converters, power supplies, and load switch circuits. Its robust design and thermal performance make it ideal for demanding environments.
Equivalent
The IRS2003STRPBF is a high-side gate driver IC. Equivalent products include the IRS2003SPBF, IRS2003TRPBF, and similar gate drivers from other manufacturers like the UCC27714 from Texas Instruments or the FAN7392 from On Semiconductor. Always check the datasheets for compatibility in terms of pin configuration, voltage ratings, and other specifications.
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