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IRLML6401
12V 4.3A [email protected],4.3A 1.3W 950
- メーカー
- Mfr。パート #IRLML6401
- パッケージ
- データシート IRLML6401 DataSheet
- 在庫中18439
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仕様
| Series | UMW |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.3A, 4.5V |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 830 pF @ 10 V |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
概要
Description
The IRLML6401 is a N-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for low-voltage applications. It features a low on-resistance (RDS(on)), typically around 0.045 ohms, which allows for efficient switching and reduced power loss during operation. The device is capable of handling high currents, with a maximum continuous drain current of around 5.6A at a temperature of 25°C.
With a gate threshold voltage (VGS(th)) between 1V and 2V, the IRLML6401 is suitable for logic-level applications, enabling it to be driven directly by microcontrollers and other low-voltage logic circuits. It is packaged in a compact, surface-mount configuration (SOT-23), making it ideal for space-constrained designs.
Applications include load switches, power management, and motor control in various electronic devices. The IRLML6401 is known for its efficiency and reliability, making it a popular choice in modern electronics.
With a gate threshold voltage (VGS(th)) between 1V and 2V, the IRLML6401 is suitable for logic-level applications, enabling it to be driven directly by microcontrollers and other low-voltage logic circuits. It is packaged in a compact, surface-mount configuration (SOT-23), making it ideal for space-constrained designs.
Applications include load switches, power management, and motor control in various electronic devices. The IRLML6401 is known for its efficiency and reliability, making it a popular choice in modern electronics.
Features
The IRLML6401 is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Low Rds(on): It offers a low on-resistance (typically 0.045 ohms at Vgs = 10V), which enhances efficiency by reducing power loss.
2. Logic Level Gate Drive: It can be driven directly by low-voltage logic levels (gate threshold voltage Vgs(th) is typically 1-2V), making it suitable for interfacing with microcontrollers.
3. High Speed: It has fast switching speeds, which are beneficial for applications like switching power supplies and motor control.
4. Robust Package: Available in a compact surface-mount package (SOT-23), allowing for space-efficient designs.
5. Maximum Ratings: It can handle a drain-source voltage (Vds) of up to 30V and continuous drain current (Id) of up to 5.5A (at 25°C), making it versatile for various applications.
6. Thermal Performance: Features good thermal characteristics, allowing for effective heat dissipation.
This combination of features makes the IRLML6401 suitable for a wide range of applications, including power management, LED drivers, and battery-powered devices.
1. Low Rds(on): It offers a low on-resistance (typically 0.045 ohms at Vgs = 10V), which enhances efficiency by reducing power loss.
2. Logic Level Gate Drive: It can be driven directly by low-voltage logic levels (gate threshold voltage Vgs(th) is typically 1-2V), making it suitable for interfacing with microcontrollers.
3. High Speed: It has fast switching speeds, which are beneficial for applications like switching power supplies and motor control.
4. Robust Package: Available in a compact surface-mount package (SOT-23), allowing for space-efficient designs.
5. Maximum Ratings: It can handle a drain-source voltage (Vds) of up to 30V and continuous drain current (Id) of up to 5.5A (at 25°C), making it versatile for various applications.
6. Thermal Performance: Features good thermal characteristics, allowing for effective heat dissipation.
This combination of features makes the IRLML6401 suitable for a wide range of applications, including power management, LED drivers, and battery-powered devices.
Package
The IRLML6401 is packaged in a SO-8 (Small Outline) package type. This surface-mounted package features a compact design suitable for various applications in electronic circuits.
Pinout
The IRLML6401 is a N-channel MOSFET with a pin count of 6. It is primarily used for low-voltage and high-performance switching applications.
Pin Configuration:
1. Gate (G): Controls the MOSFET; applies voltage to turn it on/off.
2. Drain (D): The output terminal where current flows out.
3. Source (S): The input terminal where current flows in.
4. Tab: Usually connected to the source for thermal dissipation.
Other Pins (if applicable):
- Pins may include additional functions depending on the package, such as body diode connections or thermal management.
Key Functions:
- Low on-resistance allows for efficient switching.
- Fast switching speeds make it suitable for applications like power management, motor control, and signal switching.
The IRLML6401 is favored for its low gate threshold voltage, enabling operation with lower control voltages, and its compact size makes it suitable for space-constrained designs.
Pin Configuration:
1. Gate (G): Controls the MOSFET; applies voltage to turn it on/off.
2. Drain (D): The output terminal where current flows out.
3. Source (S): The input terminal where current flows in.
4. Tab: Usually connected to the source for thermal dissipation.
Other Pins (if applicable):
- Pins may include additional functions depending on the package, such as body diode connections or thermal management.
Key Functions:
- Low on-resistance allows for efficient switching.
- Fast switching speeds make it suitable for applications like power management, motor control, and signal switching.
The IRLML6401 is favored for its low gate threshold voltage, enabling operation with lower control voltages, and its compact size makes it suitable for space-constrained designs.
Manufacturer
The IRLML6401 is manufactured by Infineon Technologies. Infineon is a global semiconductor manufacturer based in Germany, specializing in a wide range of products, including power semiconductors, microcontrollers, and sensors. The company focuses on various markets such as automotive, industrial, and consumer electronics, providing solutions that enhance energy efficiency, connectivity, and security. Infineon is known for its innovation in semiconductor technology and plays a significant role in advancing automotive electronics, particularly in areas like electric vehicles and advanced driver-assistance systems (ADAS).
Application
The IRLML6401 is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, switching power supplies, motor control, and load switching. Its low on-resistance and fast switching capabilities make it suitable for battery-powered devices and efficient power distribution in consumer electronics, automotive systems, and renewable energy systems.
Equivalent
Equivalent products to the IRLML6401 MOSFET include the BSS138, BSS123, and 2N7000. Other comparable devices are the SI2302 and SI2303, which also offer similar voltage and current ratings. Always check the datasheets for specific parameters to ensure compatibility with your application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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