IRLML5203TRPBF

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IRLML5203TRPBF

MOSFET P-CH 30V 3A MICRO3/SOT23

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仕様

Series HEXFET®
Part Status Last Time Buy
Base Product Number IRLML5203
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 98mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 510 pF @ 25 V
Power Dissipation (Max) 1.25W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Micro3™/SOT-23
Package TO-236-3, SC-59, SOT-23-3
Packaging Cut Tape (CT), Tape & Reel (TR)

概要

Description

The IRLML5203TRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features a low on-resistance (RDS(on)), making it highly efficient for power management in various electronic circuits. The device can handle a maximum drain-source voltage (VDS) of 30V and a continuous drain current (ID) of up to 62A at 25°C, making it suitable for applications such as power supplies, motor drivers, and load switching.
This MOSFET is packaged in a small footprint, which helps save space on printed circuit boards (PCBs). Its low gate threshold voltage (VGS(th)) allows for efficient drive with logic-level voltages, making it particularly useful in battery-operated devices. The "TRPBF" suffix indicates that this device is in a tape and reel packaging suitable for automated assembly and is compliant with RoHS standards, ensuring environmental safety.
Overall, the IRLML5203TRPBF is a versatile component ideal for a range of electronic applications requiring efficient power control and management.

Features

The IRLML5203TRPBF is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Low RDS(on): With a maximum on-resistance of approximately 0.045 ohms at VGS = 10V, it ensures minimal power loss.
2. High-speed switching: Ideal for fast-switching applications, improving energy efficiency.
3. Voltage Rating: Supports a maximum drain-source voltage (VDS) of 20V, making it suitable for low-voltage applications.
4. Current Handling: Capable of handling continuous drain current of up to 3.7A at 25°C, which can increase with proper heat dissipation.
5. Package Type: Available in a compact SOT-23 package, allowing for space-saving designs.
6. Gate Threshold Voltage: Low gate threshold voltage (VGS(th) typically between 1V to 2.5V), enabling it to be driven by low-voltage logic levels.
These features make the IRLML5203TRPBF a suitable choice for power management, switching regulators, and motor control applications.

Package

The IRLML5203TRPBF is packaged in a small SOT-23 form factor. This surface-mount package design allows for efficient thermal management and space-saving in electronic applications.

Manufacturer

The IRLML5203TRPBF is manufactured by Infineon Technologies, a global semiconductor company headquartered in Germany. Infineon specializes in developing and manufacturing a wide range of semiconductor and system solutions, including power management, automotive, security, and industrial applications. The company focuses on innovation and sustainability, providing components that enable energy efficiency and enhanced performance in various electronic devices. Infineon serves markets such as automotive, industrial, and consumer electronics, contributing to advancements in technology and energy efficiency worldwide.

Application

The IRLML5203TRPBF is an N-channel MOSFET commonly used in low-voltage applications. Its primary application areas include power management, switching power supplies, DC-DC converters, and motor control circuits. It is also utilized in battery management systems, LED drivers, and portable devices due to its low on-resistance and fast switching capabilities. Additionally, it can be found in consumer electronics and industrial automation systems.

Equivalent

The IRLML5203TRPBF is an N-channel MOSFET. Equivalent products include:
1. SiM8601 (Vishay)
2. BSS138 (NXP)
3. 2N7000 (ON Semiconductor)
4. BS170 (Fairchild Semiconductor)
Ensure to check the specifications such as Vds, Id, and package type for compatibility in your application.

出荷

出荷方法私たち

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出荷料参照(DHL/FedEx):

DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。

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