IRLB4132PBF

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IRLB4132PBF

IRLB4132 - 12V-300V N-CHANNEL PO

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仕様

Package Bulk
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 78A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 3.5mOhm @ 40A, 10V
Vgs(th)(Max)@Id 2.35V @ 100µA
GateCharge(Qg)(Max)@Vgs 54 nC @ 4.5 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5110 pF @ 15 V
PowerDissipation(Max) 140W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Through Hole
SupplierDevicePackage TO-220AB

概要

Description

IRLB4132PBF is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various power management applications. It features a low RDS(on) (drain-source on-resistance), which enhances efficiency by minimizing power loss during operation. With a maximum drain-source voltage of 55V and a continuous drain current rating of up to 32A, it is suitable for a wide range of electronic circuits, including switching regulators, power supplies, and motor control systems. The device is packaged in a DPAK (TO-263) form factor, allowing for effective thermal management. Its fast switching capabilities make it ideal for high-frequency applications. In summary, IRLB4132PBF is a versatile and efficient component for modern electronic designs, particularly in power applications.

Features

The IRLB4132PBF is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 30V, suitable for various low-voltage applications.
2. Current Rating: Continuous drain current (I_D) of approximately 62A, allowing for high power handling.
3. Gate Threshold Voltage (V_GS): Low gate threshold voltage range (1V to 2.5V), enabling easy drive with low-voltage logic.
4. R_DS(on): Low on-resistance of about 4.2 mΩ at V_GS = 10V, minimizing power loss in the on state.
5. Package: Available in a TO-220 package, facilitating heat dissipation and ease of mounting.
6. Fast Switching: Designed for fast switching speeds, making it ideal for applications like DC-DC converters and motor control.
7. Thermal Resistance: Low thermal resistance ensures efficient heat management.
Overall, the IRLB4132PBF is well-suited for applications requiring efficient power switching and thermal performance.

Package

The IRLB4132PBF is available in a TO-220 package type, which is a type of insulated package commonly used for power MOSFETs. This package provides good thermal performance and is suitable for mounting on heatsinks for improved heat dissipation.

Pinout

The IRLB4132PBF is an N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the switching of the MOSFET; a voltage applied here turns the device on or off.
2. Drain (D): The terminal through which the current flows out of the device when it is on.
3. Source (S): The terminal through which the current enters the device; it is connected to the ground or lower potential in most applications.
4. Body Diode: Internally connected, allowing current to flow from the drain to the source when the MOSFET is off (in the reverse direction).
5. Tab (Heat Sink): Usually connected to the source; used for heat dissipation.
This MOSFET is commonly used in power management applications due to its high efficiency and low R_DS(on).

Manufacturer

The IRLB4132PBF is manufactured by Infineon Technologies AG, a global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in the development and production of a wide range of semiconductor solutions, including power management, automotive, industrial, and security applications. The company focuses on innovative technologies for energy efficiency and connectivity, catering to various markets such as automotive, industrial, and consumer electronics. Infineon is known for its expertise in power semiconductors and has a strong commitment to sustainability and energy-efficient solutions.

Application

The IRLB4132PBF is an N-channel MOSFET commonly used in various applications, including power management, DC-DC converters, motor control, and switching applications. Its low on-resistance and fast switching speed make it suitable for high-efficiency power supplies and battery management systems. Additionally, it is utilized in automotive electronics and consumer devices to enhance energy efficiency and performance.

Equivalent

The IRLB4132PBF is an N-channel MOSFET known for its low RDS(on) and high current handling. Equivalent products include:
1. IRLZ44N
2. STP16NF06
3. AO3400
4. BSS138
5. IRF3205
Ensure to verify specifications like voltage, current ratings, and threshold voltage before substitution.

出荷

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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