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IRL2203NPBF
MOSFET N-CH 30V 116A TO220AB
- メーカー
- Mfr。パート #IRL2203NPBF
- パッケージ TO-220-3
- データシート IRL2203NPBF DataSheet
- 在庫中5632
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仕様
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Obsolete |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 116A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 7mOhm @ 60A, 10V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 60 nC @ 4.5 V |
| Vgs(Max) | ±16V |
| InputCapacitance(Ciss)(Max)@Vds | 3290 pF @ 25 V |
| PowerDissipation(Max) | 180W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-220AB |
概要
Description
IRL2203NPBF is a specific type of integrated circuit known as a Low Dropout Regulator (LDO) designed for voltage regulation applications. LDOs are crucial in managing power distribution in electronic devices, providing a stable output voltage while minimizing the dropout voltage—the difference between the input and output voltage needed for proper regulation.
The "NPBF" designation often indicates compliance with lead-free (RoHS) manufacturing standards, making it suitable for environmentally conscious designs. This component is typically used in various applications, including consumer electronics, telecommunications, and industrial equipment, where efficient power management is essential.
Key features of IRL2203NPBF may include a wide input voltage range, low output noise, and high efficiency, making it ideal for battery-powered devices. Understanding its specifications and operational characteristics is vital for designers to ensure optimal performance in their applications.
The "NPBF" designation often indicates compliance with lead-free (RoHS) manufacturing standards, making it suitable for environmentally conscious designs. This component is typically used in various applications, including consumer electronics, telecommunications, and industrial equipment, where efficient power management is essential.
Key features of IRL2203NPBF may include a wide input voltage range, low output noise, and high efficiency, making it ideal for battery-powered devices. Understanding its specifications and operational characteristics is vital for designers to ensure optimal performance in their applications.
Features
The IRL2203NPBF is a dual N-channel MOSFET designed for power management in various applications. Key features include:
1. Low R_DS(on): Offers low on-resistance (typically around 0.1 ohm), which enhances efficiency by minimizing power losses during operation.
2. High Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for a range of applications.
3. High Current Capability: Can handle continuous drain currents up to 27A, allowing it to manage significant loads effectively.
4. Fast Switching Speed: Designed for quick switching applications, reducing the time taken for the MOSFET to turn on and off, which is crucial for high-frequency operations.
5. Thermal Performance: Features good thermal conductivity with a TO-220 package, which aids in heat dissipation during high-power applications.
6. Low Gate Threshold Voltage: Allows for operation with low gate drive voltages, enhancing compatibility with various control circuits.
These features make the IRL2203NPBF an excellent choice for applications in power supplies, motor drivers, and other high-efficiency systems.
1. Low R_DS(on): Offers low on-resistance (typically around 0.1 ohm), which enhances efficiency by minimizing power losses during operation.
2. High Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for a range of applications.
3. High Current Capability: Can handle continuous drain currents up to 27A, allowing it to manage significant loads effectively.
4. Fast Switching Speed: Designed for quick switching applications, reducing the time taken for the MOSFET to turn on and off, which is crucial for high-frequency operations.
5. Thermal Performance: Features good thermal conductivity with a TO-220 package, which aids in heat dissipation during high-power applications.
6. Low Gate Threshold Voltage: Allows for operation with low gate drive voltages, enhancing compatibility with various control circuits.
These features make the IRL2203NPBF an excellent choice for applications in power supplies, motor drivers, and other high-efficiency systems.
Package
The IRL2203NPBF is packaged in a DPAK (TO-252) format. This surface-mount package is designed for power MOSFET applications, providing efficient thermal performance and a compact footprint.
Pinout
The IRL2203NPBF is a dual N-channel MOSFET in a standard 8-pin SOIC package. It features 3 pins for gate control, 2 pins for source connection, and 2 pins for drain connection, with one pin typically used for thermal management or tab connection.
### Pin Functions:
1. Gate1: Controls the first N-channel MOSFET.
2. Drain1: Drain connection for the first N-channel MOSFET.
3. Source1: Source connection for the first N-channel MOSFET.
4. Gate2: Controls the second N-channel MOSFET.
5. Drain2: Drain connection for the second N-channel MOSFET.
6. Source2: Source connection for the second N-channel MOSFET.
7. N/C: Not connected (may vary by manufacturer).
8. Tab: Thermal connection or might be connected to one of the source pins.
The IRL2203NPBF is designed for low-voltage applications and can operate at logic-level gate drive voltages.
### Pin Functions:
1. Gate1: Controls the first N-channel MOSFET.
2. Drain1: Drain connection for the first N-channel MOSFET.
3. Source1: Source connection for the first N-channel MOSFET.
4. Gate2: Controls the second N-channel MOSFET.
5. Drain2: Drain connection for the second N-channel MOSFET.
6. Source2: Source connection for the second N-channel MOSFET.
7. N/C: Not connected (may vary by manufacturer).
8. Tab: Thermal connection or might be connected to one of the source pins.
The IRL2203NPBF is designed for low-voltage applications and can operate at logic-level gate drive voltages.
Manufacturer
The IRL2203NPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer. Infineon specializes in automotive, industrial power control, and security technologies, providing a wide range of products including sensors, microcontrollers, and power management solutions. The company is known for its innovation in power electronics and is a key player in the semiconductor industry, focused on enhancing energy efficiency and sustainability in various applications. Infineon operates worldwide, serving diverse markets such as automotive, industrial, communication, and consumer electronics.
Application
The IRL2203NPBF is a dual N-channel MOSFET primarily used in applications such as motor control, power management, and switching circuits. Its low on-resistance and high-speed switching capabilities make it suitable for use in power supplies, LED drivers, and battery management systems. Additionally, it finds applications in audio amplifiers and various consumer electronics where efficient power conversion is essential.
Equivalent
The IRL2203NPBF is a N-channel MOSFET. Equivalent products include the BSS138, IRLZ44N, and STP16NF06. These alternatives may vary in specifications such as voltage rating and current capacity, so it's essential to check their datasheets for compatibility in your application.
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