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IRGP4063D
- メーカー
- Mfr。パート #IRGP4063D
- パッケージ
- データシート
- 在庫中7114
100% オリジナル &新しい
出荷の準備ができている24時間
365日の保証
RFQおよびもっと割引を得る
仕様
| Mounting Style | Through Hole |
| Package / Case | TO-247AC-3 |
| Technology | Si |
| Minimum Operating Temperature | - 55 C |
| Brand | Infineon / IR |
| Product Type | IGBT Modules |
| Subcategory | IGBTs |
| Configuration | Single |
| Height | 20.7 mm |
| Length | 15.87 mm |
| Width | 5.31 mm |
| Collector- Emitter Voltage VCEO Max | 600 V |
| Continuous Collector Current at 25 C | 96 A |
| Maximum Gate Emitter Voltage | 20 V |
概要
Description
IRGP4063D is a course designed to provide students with a comprehensive understanding of International Relations and Global Politics. It explores key theories, concepts, and frameworks that shape global interactions, including diplomacy, conflict resolution, and international organizations. The course emphasizes critical analysis of current global issues, such as climate change, security challenges, and economic interdependence. Students engage with case studies and contemporary events to apply theoretical knowledge to real-world scenarios, enhancing their analytical and problem-solving skills. Additionally, the course encourages discussions on the ethical implications of international policies and the role of non-state actors in global governance. Overall, IRGP4063D aims to equip students with the tools necessary to navigate and critically assess the complexities of international relations in a rapidly changing world.
Features
The IRGP4063D is a N-channel IGBT (Insulated Gate Bipolar Transistor) designed for high-efficiency power applications. Key features include:
1. Voltage Rating: It supports a maximum collector-emitter voltage (Vce) of 600V, making it suitable for various high-voltage applications.
2. Current Rating: It can handle continuous collector current (Ic) up to 40A, allowing for significant power handling capabilities.
3. Low Switching Loss: The device offers low on-state voltage drop and reduced switching losses, enhancing overall efficiency, especially in inverter applications.
4. Fast Switching Speed: It provides rapid switching characteristics, making it ideal for high-frequency applications.
5. Thermal Resistance: Features a robust thermal performance, with a maximum junction temperature (Tj) of 150°C, ensuring reliability under thermal stress.
6. Package Type: Typically available in a TO-220 package, facilitating easy heat dissipation and PCB mounting.
These attributes make the IRGP4063D suitable for applications like motor drives, power supplies, and renewable energy systems.
1. Voltage Rating: It supports a maximum collector-emitter voltage (Vce) of 600V, making it suitable for various high-voltage applications.
2. Current Rating: It can handle continuous collector current (Ic) up to 40A, allowing for significant power handling capabilities.
3. Low Switching Loss: The device offers low on-state voltage drop and reduced switching losses, enhancing overall efficiency, especially in inverter applications.
4. Fast Switching Speed: It provides rapid switching characteristics, making it ideal for high-frequency applications.
5. Thermal Resistance: Features a robust thermal performance, with a maximum junction temperature (Tj) of 150°C, ensuring reliability under thermal stress.
6. Package Type: Typically available in a TO-220 package, facilitating easy heat dissipation and PCB mounting.
These attributes make the IRGP4063D suitable for applications like motor drives, power supplies, and renewable energy systems.
Package
The IRGP4063D is typically packaged in a TO-220 form factor. This package type is designed for high-power applications, providing good thermal performance and easy mounting for heat dissipation.
Pinout
The IRGP4063D is an N-channel insulated gate bipolar transistor (IGBT) with a total of 6 pins. Its pin configuration and functions are as follows:
1. Gate (G): Controls the switching of the IGBT.
2. Collector (C): The main current-carrying terminal; connected to the load.
3. Emitter (E): Common terminal that is connected to the ground or return path.
The IRGP4063D is primarily used in high-power applications, such as motor drives, induction heating, and power inverters, due to its ability to handle high voltages (up to 1200V) and currents (up to 63A). It features fast switching capabilities and low conduction losses, making it suitable for efficient power conversion.
1. Gate (G): Controls the switching of the IGBT.
2. Collector (C): The main current-carrying terminal; connected to the load.
3. Emitter (E): Common terminal that is connected to the ground or return path.
The IRGP4063D is primarily used in high-power applications, such as motor drives, induction heating, and power inverters, due to its ability to handle high voltages (up to 1200V) and currents (up to 63A). It features fast switching capabilities and low conduction losses, making it suitable for efficient power conversion.
Manufacturer
The IRGP4063D is manufactured by Infineon Technologies AG, a leading global semiconductor manufacturer based in Germany. Infineon specializes in providing solutions for various applications including automotive, industrial power control, and security technologies. The company is known for its innovations in power semiconductor products, particularly in the areas of MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and IGBTs (Insulated Gate Bipolar Transistors), which are crucial for efficient power management and conversion in electronic devices. Infineon serves multiple sectors, focusing on enhancing energy efficiency and sustainability in modern technology.
Application
IRGP4063D is an N-channel IGBT (Insulated Gate Bipolar Transistor) used in various applications including motor drives, inverters, power supplies, and industrial equipment. It is suitable for high-power switching and is commonly employed in renewable energy systems like solar inverters and wind turbines, as well as in traction applications and induction heating. Its efficiency and thermal performance make it ideal for controlling and managing power in diverse electronic circuits.
Equivalent
The IRGP4063D is a high-performance MOSFET typically used in power applications. Equivalent products include the IRFPG50, STP40NF10, and FQP50N06. Always verify specifications such as voltage, current ratings, and package types to ensure compatibility in your specific application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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