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IRG4PF50WDPBF
IGBT 900V 51A TO-247AC
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- Mfr。パート #IRG4PF50WDPBF
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仕様
| Part Status | Obsolete |
| Voltage - Collector Emitter Breakdown (Max) | 900 V |
| Current - Collector (Ic) (Max) | 51 A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 28A |
| Power - Max | 200 W |
| Switching Energy | 2.63mJ (on), 1.34mJ (off) |
| Input Type | Standard |
| Gate Charge | 160 nC |
| Td (on/off) @ 25°C | 71ns/150ns |
| Test Condition | 720V, 28A, 5Ohm, 15V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247AC |
| Base Product Number | IRG4PF50 |
| Current - Collector Pulsed (Icm) | 204 A |
| Reverse Recovery Time (trr) | 90 ns |
概要
Description
The IRG4PF50WDPBF is a type of Insulated Gate Bipolar Transistor (IGBT) produced by Infineon Technologies. It is designed for high-speed switching applications, combining the features of both MOSFETs and bipolar transistors to deliver efficient power management. The device is known for its high current capacity, robust voltage handling, and energy efficiency, making it suitable for use in various industrial and consumer electronics applications, such as motor drives, inverters, and power supplies.
Key specifications include a maximum collector-emitter voltage (V_CE) of 900V and a collector current (I_C) of up to 47A. The IRG4PF50WDPBF is designed to handle high-speed switching with minimal power loss, which enhances overall system performance and reliability. The transistor also features a low on-state voltage drop, helping to reduce conduction losses during operation.
Encapsulated in a TO-247 package, the IRG4PF50WDPBF offers excellent thermal management capabilities, allowing it to operate efficiently under high power conditions. Its robust construction and performance efficiency make it a popular choice for engineers and designers seeking reliable components for demanding power applications.
Key specifications include a maximum collector-emitter voltage (V_CE) of 900V and a collector current (I_C) of up to 47A. The IRG4PF50WDPBF is designed to handle high-speed switching with minimal power loss, which enhances overall system performance and reliability. The transistor also features a low on-state voltage drop, helping to reduce conduction losses during operation.
Encapsulated in a TO-247 package, the IRG4PF50WDPBF offers excellent thermal management capabilities, allowing it to operate efficiently under high power conditions. Its robust construction and performance efficiency make it a popular choice for engineers and designers seeking reliable components for demanding power applications.
Features
The IRG4PF50WDPBF is an Insulated Gate Bipolar Transistor (IGBT) designed for high-speed switching applications. Here are some of its key features:
1. Voltage and Current Ratings: It typically supports a collector-emitter voltage of up to 900V and a continuous collector current of around 33A, making it suitable for high-voltage applications.
2. Switching Speed: The device is optimized for fast switching, which improves efficiency and reduces power loss in applications like motor drives and power inverters.
3. Low Saturation Voltage: This feature ensures reduced conduction losses, enhancing overall performance.
4. Rugged Design: The transistor is designed to handle high-energy and harsh environments, contributing to its reliability and robustness.
5. Short-Circuit Capability: It offers good short-circuit protection, making it reliable in circuits that may experience unexpected conditions.
6. Temperature Range: It operates efficiently over a wide temperature range, which is critical for maintaining performance in various operating environments.
7. TO-247AC Package: The standard TO-247AC package provides good thermal performance, aiding in heat dissipation for the device.
These features make the IRG4PF50WDPBF a suitable choice for various industrial applications, including power conversion and motor control systems.
1. Voltage and Current Ratings: It typically supports a collector-emitter voltage of up to 900V and a continuous collector current of around 33A, making it suitable for high-voltage applications.
2. Switching Speed: The device is optimized for fast switching, which improves efficiency and reduces power loss in applications like motor drives and power inverters.
3. Low Saturation Voltage: This feature ensures reduced conduction losses, enhancing overall performance.
4. Rugged Design: The transistor is designed to handle high-energy and harsh environments, contributing to its reliability and robustness.
5. Short-Circuit Capability: It offers good short-circuit protection, making it reliable in circuits that may experience unexpected conditions.
6. Temperature Range: It operates efficiently over a wide temperature range, which is critical for maintaining performance in various operating environments.
7. TO-247AC Package: The standard TO-247AC package provides good thermal performance, aiding in heat dissipation for the device.
These features make the IRG4PF50WDPBF a suitable choice for various industrial applications, including power conversion and motor control systems.
Package
The IRG4PF50WDPBF is an insulated gate bipolar transistor (IGBT) that comes in a TO-247 package.
Pinout
The IRG4PF50WDPBF is a semiconductor device, specifically an Insulated Gate Bipolar Transistor (IGBT). It typically comes in a TO-247 package and has three pins.
Pin Count and Functions:
1. Pin 1 - Gate (G):
- This pin is used to control the IGBT. A voltage applied to the gate terminal regulates the conduction between the collector and emitter.
2. Pin 2 - Collector (C):
- The collector is the main current-carrying terminal. It's connected to the positive supply or load.
3. Pin 3 - Emitter (E):
- The emitter is the current output terminal connected to the negative side of the circuit or ground.
The IRG4PF50WDPBF is widely used in applications requiring efficient switching, such as motor drives, inverters, and power supplies, due to its high-speed switching capabilities and robust performance characteristics.
Pin Count and Functions:
1. Pin 1 - Gate (G):
- This pin is used to control the IGBT. A voltage applied to the gate terminal regulates the conduction between the collector and emitter.
2. Pin 2 - Collector (C):
- The collector is the main current-carrying terminal. It's connected to the positive supply or load.
3. Pin 3 - Emitter (E):
- The emitter is the current output terminal connected to the negative side of the circuit or ground.
The IRG4PF50WDPBF is widely used in applications requiring efficient switching, such as motor drives, inverters, and power supplies, due to its high-speed switching capabilities and robust performance characteristics.
Manufacturer
The IRG4PF50WDPBF is manufactured by Infineon Technologies. Infineon is a German semiconductor manufacturer that specializes in a wide range of products, including power semiconductors, microcontrollers, sensors, and security solutions. The company serves various markets such as automotive, industrial power control, power management and multimarket, as well as digital security solutions. Infineon is known for its innovation in energy efficiency, mobility, and security technologies, making it a key player in the global semiconductor industry.
Application
The IRG4PF50WDPBF is an IGBT (Insulated Gate Bipolar Transistor) used in various high-power applications. Key application areas include motor drives, induction heating, uninterruptible power supplies (UPS), and power inverters. It is also used in renewable energy systems, such as solar inverters and wind turbine converters, due to its efficiency and fast switching capabilities. Additionally, it's used in welding equipment and other industrial power control systems.
Equivalent
The IRG4PF50WDPBF is a 600V, 36A IGBT. Equivalent products include the STMicroelectronics STGW30NC60W, Infineon Technologies IKW30N60H3, and ON Semiconductor FGL60N60SM. When selecting an equivalent, ensure that the specifications such as voltage, current rating, switching speed, and package type match your application requirements.
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