IRG4PC30UDPBF

画像は参照用のみです。

IRG4PC30UDPBF

IGBT 600V 23A 100W TO247AC

100% オリジナル &新しい

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365日の保証

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仕様

Supplier Rochester Electronics, LLC,Infineon Technologies
Package Bulk,Tube
ProductStatus Obsolete
Voltage-CollectorEmitterBreakdown(Max) 600 V
Current-Collector(Ic)(Max) 23 A
Current-CollectorPulsed(Icm) 92 A
Vce(on)(Max)@VgeIc 2.1V @ 15V, 12A
Power-Max 100 W
SwitchingEnergy 380µJ (on), 160µJ (off)
InputType Standard
GateCharge 50 nC
Td(on/off)@25°C 40ns/91ns
TestCondition 480V, 12A, 23Ohm, 15V
ReverseRecoveryTime(trr) 42 ns
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Through Hole
Package/Case TO-247-3

概要

Description

IRG4PC30UDPBF is a specific model or identifier that likely refers to a type of electronic component, such as a power supply, integrated circuit, or a related device. While details on this exact model may not be readily available, the alphanumeric code typically signifies various technical specifications, including features like voltage ratings, current capacities, or application types.
In general, devices with such identifiers are used in various applications, ranging from consumer electronics to industrial systems. They may be associated with advancements in technology, focusing on efficiency, reliability, or miniaturization. For precise information, including the manufacturer's data, datasheets, and application notes, it would be best to consult the relevant manufacturer's documentation or product listings.

Features

The IRG4PC30UDPBF is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of up to 30V, making it suitable for various low-voltage applications.
2. Current Handling: It has a continuous drain current (I_D) rating of 40A, allowing it to handle significant loads effectively.
3. R_DS(on): The on-resistance is low, typically around 13mΩ, which enhances efficiency by minimizing power loss during operation.
4. Package Type: It comes in a compact DPAK package, facilitating easy integration into circuits.
5. Thermal Performance: Designed for good thermal management, it can operate at elevated temperatures, ensuring stable performance.
6. Fast Switching: The device features fast switching capabilities, making it suitable for applications like power management and DC-DC converters.
These characteristics make the IRG4PC30UDPBF ideal for various electronic applications, including automotive and industrial systems.

Package

The IRG4PC30UDPBF is packaged in a TO-220 package type, which is commonly used for power transistors. This package provides good thermal performance and allows for easy mounting on heat sinks.

Pinout

The IRG4PC30UDPBF is an IGBT (Insulated Gate Bipolar Transistor) module with a total of 8 pins. It is typically used for high-power applications such as motor drives, inverters, and power supplies.
The pin configuration is as follows:
1. Gate (G) - Controls the switching of the IGBT.
2. Collector (C) - The main current-carrying terminal where the output is taken.
3. Emitter (E) - Connects to the load and completes the circuit.
4. Heat Sink - For thermal management to dissipate heat.
5. Protection Diode - For reverse voltage protection, ensuring safe operation during turn-off.
The device is designed for efficient switching and high performance, suitable for applications requiring fast and reliable operation. Always refer to the manufacturer's datasheet for detailed specifications and operational guidelines.

Manufacturer

The manufacturer of the IRG4PC30UDPBF is Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in various sectors, including automotive, industrial power control, and digital security solutions. Infineon is recognized for its innovation in power semiconductor technologies and integrated circuits, serving markets such as automotive electronics, renewable energy, and Internet of Things (IoT) applications. The IRG4PC30UDPBF is a high-power insulated gate bipolar transistor (IGBT) used primarily in applications like motor drives and power conversion systems.

Application

IRG4PC30UDPBF is a high-performance power MOSFET primarily used in applications such as DC-DC converters, motor drives, power management systems, and renewable energy systems like solar inverters. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supplies and electric vehicles.

Equivalent

The IRG4PC30UDPBF is an IGBT (Insulated Gate Bipolar Transistor) designed for high-power applications. Equivalent products include the Infineon IGBT series, such as the IKW40N60T, and the ON Semiconductor MBRD830LT3G. Always verify specifications like voltage, current ratings, and switching characteristics when searching for equivalents.

出荷

出荷方法私たち

DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。


出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

支払い

Payment Methods

支払い期間は100％前払いです。

現在、下記の支払い方法のみを受け入れています。:

1. ペイパル

2. クレジット・デビットカード

3. ワイヤー 転送

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