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IRFR9220PBF

Name: IRFR9220PBF
Rating: 4.7 (12 reviews)

MOSFET P-CH 200V 3.6A DPAK

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Mfr。パート #IRFR9220PBF
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仕様

Supplier	Vishay Siliconix
Package	Tube
ProductStatus	Active
FETType	P-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	200 V
Current-ContinuousDrain(Id)@25°C	3.6A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	1.5Ohm @ 2.2A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	20 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	340 pF @ 25 V
PowerDissipation(Max)	2.5W (Ta), 42W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	D-Pak

概要

Description

IRFR9220PBF is a Pb-free N-channel power MOSFET from International Rectifier (now Infineon). It’s an enhancement-mode device used for switching in power electronics.
Key points:
- Purpose: high-side/low-side switching in DC-DC converters, motor drivers, power supplies, LED drivers, etc.
- Features: capable Vds and Id for power switching, low on-resistance for efficiency, fast switching, and rugged electrical characteristics (avalanche protection in many designs).
- Packaging: PBF suffix indicates Pb-free packaging; available in common surface-mount power MOSFET packages (e.g., DPAK/D2PAK variants) depending on supplier.
- Design note: Gate drive must respect the device’s Vgs rating; use appropriate gate voltage for full conduction and manage thermal performance with proper heatsinking.
For exact electrical specs (Vds, Id, Rds(on), Qg, thermal resistance, and package type), refer to the latest datasheet from Infineon/IR or your distributor.

Features

IRFR9220PBF is an N-channel enhancement-mode power MOSFET in Pb-free packaging. Key features:
- High current capability
- Low on-resistance for reduced conduction losses
- Fast switching with low gate charge
- Logic-level drive compatibility
- Avalanche rugged for inductive-load protection
- Good dv/dt and di/dt tolerance
- RoHS-compliant (Pb-free)
Suitable for switch-mode power supplies, DC-DC converters, motor drives, and other high-speed switching applications.

Package

Pb-free, surface-mount N-channel MOSFET in a D2PAK (TO-263) package.

Pinout

IRFR9220PBF is a 3-pin power MOSFET. Pin count: 3 (Gate, Drain, Source). In typical packages the tab is connected to Drain. Function: Gate controls the channel between Drain and Source; used as a switching/linear device in power circuits.

Manufacturer

- Manufacturer: International Rectifier (IR), now part of Infineon Technologies.
- What kind of company: A global semiconductor company specializing in power electronics and power management devices (MOSFETs, IGBTs, etc.).

Application

IRFR9220PBF is an N-channel enhancement MOSFET designed for high-current, low-Rds(on) switching. Common application areas:
- Switching power supplies and DC-DC converters (buck/boost stages)
- Motor drive and fast-switching in DC/BLDC applications
- Automotive and industrial power switches (load switches, inverters)
- Power-management circuits requiring a fast, efficient N-MOSFET
- General-purpose high-current switching in consumer electronics

Equivalent

Exact equivalents depend on Vds, Id, Rds(on) and package. Please share the IRFR9220PBF datasheet or key specs (e.g., Vds, Id, Rds(on), package). I’ll provide precise cross-references from Infineon, ST, Vishay, On Semi, etc. Without specs, I can only suggest generic 60V N-channel MOSFETs in similar packages, which may not be direct substitutes.