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IRFR9214TRPBF

Name: IRFR9214TRPBF
Rating: 4.7 (12 reviews)

MOSFET P-CH 250V 2.7A DPAK

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Mfr。パート #IRFR9214TRPBF
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データシート IRFR9214TRPBF DataSheet
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仕様

Supplier	Vishay Siliconix
Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
FETType	P-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	250 V
Current-ContinuousDrain(Id)@25°C	2.7A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	10V
RdsOn(Max)@IdVgs	3Ohm @ 1.7A, 10V
Vgs(th)(Max)@Id	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	14 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	220 pF @ 25 V
PowerDissipation(Max)	50W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	D-Pak

概要

Description

IRFR9214TRPBF is a N-channel enhancement-mode power MOSFET from International Rectifier (now Infineon). It’s intended for high-efficiency switching in power electronics such as DC–DC converters, motor drivers, inverters, and hot‑swap or load-switch circuits. It uses trench MOSFET technology to deliver low RDS(on) and rugged switching performance.
TRPBF denotes a Pb-free, Tape-and-Reel version (for automated assembly) in a surface‑mount power package. Exact package type and electrical ratings (VDS, ID, RDS(on) at a given VGS, gate charge, and thermal specs) are specified in the datasheet and should be consulted for design.
Common considerations: ensure proper gate drive voltage (VGS), adequate heat sinking (thermal resistance), and check the safe operating area and avalanche ratings for your application.
Where to get details: Infineon/IR product page and the IRFR9214TRPBF datasheet will give the complete electrical characteristics, packaging, and mounting recommendations.

Features

IRFR9214TRPBF features (concise):
- N-channel enhancement-mode power MOSFET
- Very low Rds(on) for reduced conduction losses
- High current capability and robust switching performance
- Fast switching with low gate charge
- Avalanche energy capability for inductive-load ruggedness
- Pb-free, RoHS-compliant TRPBF package
- Suitable for switch-mode power supplies, DC-DC converters, motor drivers, and inverters
- Integrated body diode with favorable reverse-recovery characteristics
Note: For exact electrical specs (Vds, Id, Rds(on), gate charge, etc.), please refer to the official datasheet.

Package

The IRFR9214TRPBF is supplied in a TO-220AB (TO‑220) through‑hole power package. The "TRPBF" suffix indicates tape‑and‑reel packaging and Pb‑free finish.

Pinout

- Pin count: 3 leads + heat-sink tab (TO-252 / DPAK package)
- Pinout: Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source; tab = Drain
- Function: N-channel enhancement-mode power MOSFET used as a switching transistor in power circuits.

Manufacturer

Manufacturer: Infineon Technologies (the part originates from International Rectifier, which Infineon acquired).
Type of company: A multinational semiconductor manufacturer specializing in power semiconductors (power MOSFETs, IGBTs), power-management ICs and related solutions for automotive, industrial, and consumer electronics.

Application

IRFR9214TRPBF is an N-channel enhancement-mode power MOSFET used for high- and low-side switching in power electronics. Typical applications: switch‑mode power supplies (buck/boost/inverter stages), DC‑DC converters, motor drivers (BLDC/DC motors), solar and battery charge/discharge circuits, automotive power management, UPS/telecom power, solid-state relays and general high-current load switching.

Equivalent

IRFR9214TRPBF equivalents are other N‑channel power MOSFETs with matching VDS, RDS(on), ID, VGS and package. Common substitute families (verify ratings before use) include IRFZ44N, IRLZ44N, STP55NF06 and similar AO-series MOSFETs. For exact cross‑references, use Infineon/ON Semi/Digi‑Key/Mouser part‑search tools to match datasheet specs.