IRFR5505TRPBF

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IRFR5505TRPBF

MOSFET P-CH 55V 18A DPAK

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 55 V
Current-ContinuousDrain(Id)@25°C 18A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 110mOhm @ 9.6A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 32 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 650 pF @ 25 V
PowerDissipation(Max) 57W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D-Pak

概要

Description

IRFR5505TRPBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It features a low on-resistance, enabling efficient switching and reduced power loss, making it suitable for applications such as DC-DC converters, power supplies, and motor control. The device typically supports high voltage levels and can handle significant current, making it versatile for various electronic circuits.
The "TRPBF" designation indicates that the MOSFET is packaged in a specific configuration (usually a TO-220 package) and is RoHS-compliant, meaning it adheres to environmental regulations regarding hazardous substances. Key specifications include gate threshold voltage, maximum drain-source voltage, and maximum continuous drain current, all of which are critical for ensuring optimal performance in demanding applications.
Overall, IRFR5505TRPBF is ideal for designers seeking reliability and efficiency in their power management solutions.

Features

The IRFR5505TRPBF is an N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: Supports a maximum drain-to-source voltage (Vds) of 55V.
2. Current Rating: Capable of handling continuous drain currents up to 50A, making it suitable for high-power applications.
3. Low On-Resistance: It has a low Rds(on) typically around 0.032 ohms at a gate-source voltage (Vgs) of 10V, enhancing efficiency by minimizing power loss.
4. Fast Switching Speed: Suitable for high-frequency applications due to its rapid switching capabilities.
5. Thermal Performance: Packaged in a TO-220 form factor, allowing for effective heat dissipation.
6. Gate Threshold Voltage: It features a gate threshold voltage (Vgs(th)) of 2-4V, enabling operation with lower gate drive voltages.
7. Robust Design: The device is designed for reliability in automotive and industrial applications.
Overall, the IRFR5505TRPBF is well-suited for use in power management, motor control, and switching applications.

Package

The IRFR5505TRPBF is packaged in a TO-220 form factor. This package type is commonly used for power MOSFETs, providing good thermal performance and ease of mounting on heatsinks.

Pinout

The IRFR5505TRPBF is an N-channel MOSFET with a total of 8 pins. Its key functions include:
1. Gate (G): Controls the MOSFET's operation; applies voltage to turn the device on or off.
2. Drain (D): The current flows out of the MOSFET when it is turned on.
3. Source (S): The current enters the MOSFET from the source terminal.
The pinout configuration is as follows:
- Pin 1: Gate
- Pin 2: Drain
- Pin 3: Source
- Pin 4: Source
- Pin 5: Drain
- Pin 6: Drain
- Pin 7: Gate
- Pin 8: Source
This device is designed for high-speed switching applications and is commonly used in power management circuits. It has low on-resistance and high-speed switching capabilities, making it suitable for various power applications.

Manufacturer

The IRFR5505TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in developing a wide range of semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics. Their products include power semiconductors, microcontrollers, and sensors, among others, focusing on innovation and energy efficiency. Infineon plays a significant role in advancing technologies related to power management and electronic systems.

Application

The IRFR5505TRPBF is an N-channel MOSFET primarily used in power management applications. Its areas of application include DC-DC converters, motor control, power supplies, and switching applications in industrial and consumer electronics. Its low on-resistance and high-speed switching capabilities make it suitable for efficient power handling and thermal management in a variety of electronic circuits.

Equivalent

The IRFR5505TRPBF is an N-channel MOSFET. Equivalent products include the STP55NF06, FQP55N06L, and BSS139. When selecting alternatives, ensure to compare key specifications like voltage, current rating, RDS(on), and package type to ensure compatibility with your application. Always verify with datasheets for confirmation.

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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