IRFR120PBF

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IRFR120PBF

MOSFET N-CH 100V 7.7A DPAK

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仕様

Package Tube
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 7.7A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 270mOhm @ 4.6A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 16 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 360 pF @ 25 V
PowerDissipation(Max) 2.5W (Ta), 42W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D-Pak

概要

Description

IRFR120PBF is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency applications. It features a low on-resistance, enabling efficient power management in various electronic circuits. This transistor is particularly suitable for use in power supplies, motor drivers, and switching applications due to its quick switching speed and robust thermal performance.
The IRFR120PBF has a maximum drain-source voltage of 120V, a continuous drain current rating of up to 33A, and a low gate threshold voltage, making it ideal for use in low-voltage applications. The PBF suffix indicates that it is lead-free, complying with environmental regulations such as RoHS (Restriction of Hazardous Substances).
Its compact packaging enhances thermal dissipation and allows for easy integration into circuit designs. Overall, the IRFR120PBF is a reliable choice for engineers looking to implement efficient power solutions in their designs.

Features

The IRFR120PBF is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for a variety of power electronic applications.
2. Current Rating: The device supports a continuous drain current (I_D) of 120A, facilitating high-load applications.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically low at around 0.025 ohms, which helps reduce power loss during operation.
4. Fast Switching: It features fast switching capabilities, making it ideal for applications requiring high-speed operation.
5. Package Type: The MOSFET comes in a TO-220 package, allowing for efficient heat dissipation and easy mounting on PCBs.
6. Thermal Resistance: It has low thermal resistance, enhancing reliability in demanding environments.
7. Applications: Commonly used in power supplies, motor drives, and other high-efficiency applications.
Overall, the IRFR120PBF is well-regarded for its robustness, efficiency, and versatility in power management systems.

Package

The IRFR120PBF is typically packaged in a TO-220 form factor. This type of package is designed for efficient thermal management and robust performance in power applications.

Pinout

The IRFR120PBF is an N-channel MOSFET with a pin count of 3. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): This is the output terminal where the load is connected. Current flows from this pin when the MOSFET is on.
3. Source (S): This pin is connected to the ground or the negative side of the power supply.
The IRFR120PBF is designed for applications such as power switching, motor control, and other high-current operations. It features a low on-resistance, which enhances efficiency in switching applications.

Manufacturer

The IRFR120PBF is manufactured by Infineon Technologies AG, a leading global semiconductor company headquartered in Neubiberg, Germany. Infineon specializes in the production of semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics. The company is known for its innovations in power semiconductors, sensors, and security solutions. Infineon plays a critical role in enabling energy efficiency and digitalization across numerous industries. The IRFR120PBF itself is a power MOSFET designed for high-efficiency switching applications, widely used in power management systems.

Application

The IRFR120PBF is a N-channel MOSFET used in various applications including power management, switching power supplies, motor control, and automotive systems. Its low on-resistance and high-speed switching capabilities make it suitable for DC-DC converters, inverters, and high-efficiency power amplifiers. Additionally, it is commonly employed in industrial automation and consumer electronics for efficient power distribution and control.

Equivalent

The IRFR120PBF is an N-channel MOSFET. Equivalent products include:
1. STP16NF06
2. FQP30N06L
3. IRF3205
4. BSS138
Always check the specifications such as V_DS, I_D, R_DS(on), and package type for compatibility with your application.

出荷

出荷方法私たち

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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