IRFR120NTRPBF

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IRFR120NTRPBF

MOSFET N-CH 100V 9.4A DPAK

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V
Current-ContinuousDrain(Id)@25°C 9.4A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 210mOhm @ 5.6A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 25 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 330 pF @ 25 V
PowerDissipation(Max) 48W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D-Pak

概要

Description

IRFR120NTRPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It features a voltage rating of 120V and a continuous drain current capability, making it suitable for various switching and amplification tasks in power management circuits. The device is characterized by low on-resistance (R_DS(on)), which minimizes power loss and enhances thermal performance.
The "N" indicates an N-channel configuration, which is commonly used for high-side switching in power supply applications. The "TR" suggests that it is optimized for fast switching, while "PBF" indicates that it is lead-free, complying with environmental standards.
Applications include DC-DC converters, power supplies, and motor control circuits, where efficient switching performance is critical. Overall, IRFR120NTRPBF is a reliable choice for designers looking to improve power efficiency and thermal management in their electronic designs.

Features

The IRFR120NTRPBF is an N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: 55V maximum drain-source voltage (V_DS).
2. Current Rating: Capable of handling continuous drain current up to 120A.
3. Low On-Resistance: Features a low R_DS(on) typically around 0.05 ohms, which reduces power loss during operation.
4. Fast Switching Speed: Suitable for high-frequency applications due to its fast switching capabilities.
5. Gate Threshold Voltage: Typically between 2V and 4V, allowing it to be driven by low-voltage circuits.
6. Package Type: Available in a TO-220 package, facilitating easy heat dissipation.
7. Applications: Commonly used in power supplies, motor control, and other automotive and industrial applications.
Overall, the IRFR120NTRPBF is ideal for applications requiring high efficiency and reliability.

Package

The IRFR120NTRPBF is packaged in a TO-220 style casing. This package type is commonly used for power MOSFETs, providing good thermal performance and ease of heat sinking.

Pinout

The IRFR120NTRPBF is an N-channel MOSFET with a pin count of 3. Its pin configuration is as follows:
1. Gate (G): The gate terminal is used to control the flow of current between the drain and source by applying a voltage.
2. Drain (D): The drain terminal is where the current exits the MOSFET when it is in the "on" state.
3. Source (S): The source terminal is where the current enters the MOSFET.
The IRFR120NTRPBF is designed for high-speed switching applications and can handle a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 33A. It features low on-resistance (R_DS(on)), making it suitable for power management applications, including motor drivers and power converters.

Manufacturer

The IRFR120NTRPBF is manufactured by International Rectifier, a subsidiary of Infineon Technologies AG. International Rectifier specializes in power management and semiconductor technologies, focusing on the design and manufacture of high-performance power MOSFETs, integrated circuits, and other related products. Their solutions are widely used in applications such as automotive, industrial, and consumer electronics. Infineon Technologies, the parent company, is a leading global semiconductor manufacturer headquartered in Germany, providing a broad range of semiconductor solutions for various sectors, including automotive, industrial power control, and security technology.

Application

The IRFR120NTRPBF is an N-channel MOSFET commonly used in power management applications. Its main areas of application include DC-DC converters, motor control, switching power supplies, and audio amplifiers. It is also suitable for high-efficiency power switching in industrial and consumer electronics, automotive systems, and renewable energy systems like solar inverters.

Equivalent

The IRFR120NTRPBF is an N-channel MOSFET with similar characteristics to several other models. Equivalent products include the STP16NF06, FQP30N06L, and BSS123. Always verify specifications such as voltage, current ratings, and package type to ensure compatibility for your specific application.

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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