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IRFR1205TRPBF
IRFR1205 - 12V-300V N-CHANNEL PO
- メーカー
- Mfr。パート #IRFR1205TRPBF
- パッケージ TO-252-3
- データシート IRFR1205TRPBF DataSheet
- 在庫中4740
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仕様
| Package | Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 55 V |
| Current-ContinuousDrain(Id)@25°C | 44A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 27mOhm @ 26A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 65 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1300 pF @ 25 V |
| PowerDissipation(Max) | 107W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-Pak |
概要
Description
IRFR1205TRPBF is a high-performance, N-channel MOSFET designed for various electronic applications, including power management and switching circuits. It features a low on-resistance, enabling efficient operation with minimal power loss, which is crucial for reducing heat generation in compact designs. The device typically supports high voltage and current levels, making it suitable for applications such as power converters, motor drivers, and load switches.
Key specifications often include a maximum drain-source voltage (V_DS), a continuous drain current (I_D), and a fast switching speed, which enhances its performance in high-frequency applications. Its compact package helps save board space, making it ideal for modern electronic devices where size is a concern. Additionally, it is manufactured using advanced semiconductor processes, ensuring reliability and consistency in various operating conditions. Overall, IRFR1205TRPBF is well-regarded for its versatility and efficiency in power electronic systems.
Key specifications often include a maximum drain-source voltage (V_DS), a continuous drain current (I_D), and a fast switching speed, which enhances its performance in high-frequency applications. Its compact package helps save board space, making it ideal for modern electronic devices where size is a concern. Additionally, it is manufactured using advanced semiconductor processes, ensuring reliability and consistency in various operating conditions. Overall, IRFR1205TRPBF is well-regarded for its versatility and efficiency in power electronic systems.
Features
The IRFR1205TRPBF is an N-channel MOSFET from Infineon Technologies, designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, suitable for various applications.
2. Current Rating: The continuous drain current (I_D) is rated at 120A, allowing it to handle high load requirements.
3. R_DS(on): The on-resistance is low, typically around 0.0085 ohms, which minimizes conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, ensuring it operates well with standard logic levels.
5. Package: It comes in a TO-220 package, facilitating effective heat dissipation and easy mounting.
6. Fast Switching Speed: The device supports high-frequency applications due to its fast switching characteristics.
7. Applications: Commonly used in DC-DC converters, motor drives, and other power management circuits.
These features make the IRFR1205TRPBF suitable for a broad range of electronic applications requiring efficient power switching.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V, suitable for various applications.
2. Current Rating: The continuous drain current (I_D) is rated at 120A, allowing it to handle high load requirements.
3. R_DS(on): The on-resistance is low, typically around 0.0085 ohms, which minimizes conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, ensuring it operates well with standard logic levels.
5. Package: It comes in a TO-220 package, facilitating effective heat dissipation and easy mounting.
6. Fast Switching Speed: The device supports high-frequency applications due to its fast switching characteristics.
7. Applications: Commonly used in DC-DC converters, motor drives, and other power management circuits.
These features make the IRFR1205TRPBF suitable for a broad range of electronic applications requiring efficient power switching.
Package
The IRFR1205TRPBF is packaged in a TO-220 style package. This type of package is commonly used for power transistors, offering efficient heat dissipation and ease of mounting on heatsinks.
Pinout
The IRFR1205TRPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G): Controls the switching of the MOSFET. Applying a voltage to this pin turns the device on.
2. Drain (D): The terminal through which the load current flows when the MOSFET is switched on.
3. Source (S): The terminal that connects to ground or the negative side of the circuit; it serves as the reference point for the gate voltage.
The IRFR1205TRPBF is designed for high-speed switching applications and can handle high voltages and currents, making it suitable for power management in various electronic devices.
1. Gate (G): Controls the switching of the MOSFET. Applying a voltage to this pin turns the device on.
2. Drain (D): The terminal through which the load current flows when the MOSFET is switched on.
3. Source (S): The terminal that connects to ground or the negative side of the circuit; it serves as the reference point for the gate voltage.
The IRFR1205TRPBF is designed for high-speed switching applications and can handle high voltages and currents, making it suitable for power management in various electronic devices.
Manufacturer
The IRFR1205TRPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in providing semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics. The company focuses on power management, automotive electronics, and security solutions, making it a key player in the transition to sustainable energy and smart mobility. Infineon is known for its innovation and development of technologies that enhance efficiency and performance in electronic systems.
Application
The IRFR1205TRPBF is an N-channel MOSFET widely used in power management applications, including DC-DC converters, motor drives, and switch-mode power supplies. Its high efficiency and fast switching capabilities make it suitable for automotive, industrial, and consumer electronics applications. Additionally, it can be employed in battery management systems and renewable energy systems, such as solar inverters.
Equivalent
The IRFR1205TRPBF is an N-channel MOSFET. Equivalent products include BSS123, BSS138, and FQP30N06L. For higher current applications, consider alternatives like IRF540 or IRF320. Always check the datasheets for specific electrical characteristics and ratings to ensure compatibility with your circuit requirements.
出荷
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
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