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IRFP90N20DPBF
MOSFET N-CH 200V 94A TO247AC
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- Mfr。パート #IRFP90N20DPBF
- パッケージ TO-247-3
- データシート IRFP90N20DPBF DataSheet
- 在庫中5232
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仕様
| Package | Bulk,Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 94A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 23mOhm @ 56A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 270 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 6040 pF @ 25 V |
| PowerDissipation(Max) | 580W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
概要
Description
The IRFP90N20DPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It features a maximum drain-source voltage (V_DS) of 200V and a continuous drain current (I_D) of 90A, making it suitable for high-voltage and high-current applications. The device is characterized by a low on-resistance (R_DS(on)), which minimizes power loss and enhances thermal performance.
Key specifications include a gate threshold voltage (V_GS(th)) of 2-4V, making it easily driven by standard gate voltages, and a total gate charge (Q_g) that affects switching speed and efficiency. The IRFP90N20DPBF is commonly used in power supplies, motor drivers, and inverter circuits, ensuring reliable operation in demanding environments.
This MOSFET is housed in a TO-220 package, facilitating good heat dissipation, and is RoHS compliant, indicating it meets environmental standards. Its combination of performance and reliability makes it a popular choice among engineers in power electronics design.
Key specifications include a gate threshold voltage (V_GS(th)) of 2-4V, making it easily driven by standard gate voltages, and a total gate charge (Q_g) that affects switching speed and efficiency. The IRFP90N20DPBF is commonly used in power supplies, motor drivers, and inverter circuits, ensuring reliable operation in demanding environments.
This MOSFET is housed in a TO-220 package, facilitating good heat dissipation, and is RoHS compliant, indicating it meets environmental standards. Its combination of performance and reliability makes it a popular choice among engineers in power electronics design.
Features
The IRFP90N20DPBF is a N-channel MOSFET designed for high-efficiency power switching applications. Key features include:
1. Voltage Rating: 200V, allowing it to handle high-voltage requirements.
2. Current Rating: 90A continuous drain current, suitable for high-power applications.
3. On-State Resistance (R_DS(on)): Low R_DS(on) of around 0.04Ω (max), minimizing conduction losses and improving efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically 2-4V, ensuring easy drive with logic level voltages.
5. Fast Switching Speed: Suitable for high-frequency applications, enhancing performance in switch-mode power supplies and converters.
6. TO-220 Package: Provides effective heat dissipation, allowing for higher performance in compact designs.
7. Safe Operating Area (SOA): Robust SOA characteristics, ensuring reliability in various operating conditions.
Overall, the IRFP90N20DPBF is ideal for applications in automotive, industrial, and renewable energy systems, where efficiency and reliability are crucial.
1. Voltage Rating: 200V, allowing it to handle high-voltage requirements.
2. Current Rating: 90A continuous drain current, suitable for high-power applications.
3. On-State Resistance (R_DS(on)): Low R_DS(on) of around 0.04Ω (max), minimizing conduction losses and improving efficiency.
4. Gate Threshold Voltage (V_GS(th)): Typically 2-4V, ensuring easy drive with logic level voltages.
5. Fast Switching Speed: Suitable for high-frequency applications, enhancing performance in switch-mode power supplies and converters.
6. TO-220 Package: Provides effective heat dissipation, allowing for higher performance in compact designs.
7. Safe Operating Area (SOA): Robust SOA characteristics, ensuring reliability in various operating conditions.
Overall, the IRFP90N20DPBF is ideal for applications in automotive, industrial, and renewable energy systems, where efficiency and reliability are crucial.
Package
The IRFP90N20DPBF is packaged in a TO-220 form factor, which is a type of through-hole package designed for high-power applications. This package type allows for efficient heat dissipation and easy mounting on heat sinks.
Pinout
The IRFP90N20DPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit, allowing current to enter the MOSFET from the source.
The IRFP90N20DPBF is commonly used in power applications such as switching regulators and motor drives, supporting high voltage and current handling capabilities. It features a maximum continuous current of 90A and a maximum V_DS of 200V.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This is the terminal through which current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground or the lower potential side of the circuit, allowing current to enter the MOSFET from the source.
The IRFP90N20DPBF is commonly used in power applications such as switching regulators and motor drives, supporting high voltage and current handling capabilities. It features a maximum continuous current of 90A and a maximum V_DS of 200V.
Manufacturer
The IRFP90N20DPBF is manufactured by International Rectifier, which is a part of Infineon Technologies. International Rectifier specializes in power management solutions, particularly in the area of semiconductor devices. The company designs and manufactures a wide range of products, including power MOSFETs, integrated circuits (ICs), and other components used in various applications such as automotive, industrial, and consumer electronics. Infineon Technologies, based in Germany, is a global leader in semiconductor solutions, focusing on energy efficiency, mobility, and security technologies.
Application
The IRFP90N20DPBF is a high-power N-channel MOSFET used in various applications, including power supplies, motor drives, and DC-DC converters. Its high voltage and current handling capabilities make it suitable for electric vehicles, renewable energy systems, and industrial automation. Additionally, it is employed in audio amplifiers and switching applications due to its low on-resistance and fast switching speeds.
Equivalent
Equivalent products to the IRFP90N20DPBF include the IRF320, STP90NF20, and FQP90N20. These MOSFETs are typically N-channel, rated for similar voltage and current specifications, making them suitable substitutes in various applications. Always verify specifications to ensure compatibility.
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