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IRFP4668PBF
MOSFET N-CH 200V 130A TO247AC
- メーカー
- Mfr。パート #IRFP4668PBF
- パッケージ TO247
- データシート IRFP4668PBF DataSheet
- 在庫中7184
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仕様
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 200 V |
| Current-ContinuousDrain(Id)@25°C | 130A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 9.7mOhm @ 81A, 10V |
| Vgs(th)(Max)@Id | 5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 241 nC @ 10 V |
| Vgs(Max) | ±30V |
| InputCapacitance(Ciss)(Max)@Vds | 10720 pF @ 50 V |
| PowerDissipation(Max) | 520W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
概要
Description
The IRFP4668PBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for a variety of applications, including power management, motor control, and switch-mode power supplies. It features a low on-resistance (RDS(on)) of around 0.025 ohms, which allows for efficient operation and minimal power loss when conducting current.
With a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 90A, the IRFP4668PBF is capable of handling substantial power levels, making it suitable for demanding electronic applications. The device also has a fast switching speed, enabling efficient operation in high-frequency circuits.
Its package type, typically available in TO-220 or similar formats, provides good thermal performance, facilitating heat dissipation. The “PBF” designation indicates that it is lead-free, complying with environmental regulations. Overall, the IRFP4668PBF is an effective choice for applications requiring reliable switching and high current handling capabilities.
With a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 90A, the IRFP4668PBF is capable of handling substantial power levels, making it suitable for demanding electronic applications. The device also has a fast switching speed, enabling efficient operation in high-frequency circuits.
Its package type, typically available in TO-220 or similar formats, provides good thermal performance, facilitating heat dissipation. The “PBF” designation indicates that it is lead-free, complying with environmental regulations. Overall, the IRFP4668PBF is an effective choice for applications requiring reliable switching and high current handling capabilities.
Features
The IRFP4668PBF is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Low RDS(on): Offers an on-resistance of 0.025 ohms (max) at VGS = 10V, enhancing efficiency and reducing heat generation.
2. High Voltage Rating: Supports a maximum drain-source voltage (VDS) of 60V, suitable for various power management applications.
3. High Current Capability: Capable of handling continuous drain current (ID) up to 80A, making it suitable for demanding load applications.
4. Fast Switching Speed: Provides quick switching times, which improves efficiency in high-frequency applications.
5. Robust Thermal Performance: Features a maximum junction temperature of 175°C, allowing for reliable operation under high-temperature conditions.
6. TO-220 Package: Comes in a TO-220 package, facilitating easy heat dissipation and integration into circuit boards.
Overall, the IRFP4668PBF is ideal for power supplies, motor drivers, and other high-efficiency power applications.
1. Low RDS(on): Offers an on-resistance of 0.025 ohms (max) at VGS = 10V, enhancing efficiency and reducing heat generation.
2. High Voltage Rating: Supports a maximum drain-source voltage (VDS) of 60V, suitable for various power management applications.
3. High Current Capability: Capable of handling continuous drain current (ID) up to 80A, making it suitable for demanding load applications.
4. Fast Switching Speed: Provides quick switching times, which improves efficiency in high-frequency applications.
5. Robust Thermal Performance: Features a maximum junction temperature of 175°C, allowing for reliable operation under high-temperature conditions.
6. TO-220 Package: Comes in a TO-220 package, facilitating easy heat dissipation and integration into circuit boards.
Overall, the IRFP4668PBF is ideal for power supplies, motor drivers, and other high-efficiency power applications.
Package
The IRFP4668PBF is packaged in a TO-220 form factor. This package type is designed for high-power applications, providing effective thermal dissipation and allowing for easier mounting on heatsinks.
Pinout
The IRFP4668PBF is an N-channel MOSFET with a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate relative to the source allows the MOSFET to turn on (conduct) or off (not conduct).
2. Drain (D) - This pin is the output terminal where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is the terminal through which the current exits the MOSFET when it is conducting. It is typically connected to ground or the negative side of the power supply in an N-channel configuration.
The IRFP4668PBF is designed for high-speed switching applications and can handle significant power levels, making it suitable for various electronic applications.
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied to the gate relative to the source allows the MOSFET to turn on (conduct) or off (not conduct).
2. Drain (D) - This pin is the output terminal where the load is connected. Current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - This pin is the terminal through which the current exits the MOSFET when it is conducting. It is typically connected to ground or the negative side of the power supply in an N-channel configuration.
The IRFP4668PBF is designed for high-speed switching applications and can handle significant power levels, making it suitable for various electronic applications.
Manufacturer
The IRFP4668PBF is manufactured by Vishay Intertechnology, Inc. Vishay is a global leader in the semiconductor and passive component industry. Founded in 1962, the company designs, manufactures, and supplies a wide range of electronic components, including power MOSFETs, diodes, resistors, capacitors, and inductors. Vishay serves various markets such as automotive, industrial, consumer electronics, telecommunications, and military/aerospace. With a focus on innovation and quality, Vishay is known for its commitment to providing high-performance solutions for electronic applications.
Application
The IRFP4668PBF is an N-channel MOSFET primarily used in power applications such as DC-DC converters, motor drives, and power inverters. Its high voltage and current ratings make it suitable for automotive, renewable energy systems, and industrial equipment. Additionally, it is employed in audio amplifiers and other high-efficiency switching applications.
Equivalent
The IRFP4668PBF is a N-channel MOSFET. Equivalent products include the STP55NF06L, AOD8N60, and FQP30N60. Always verify specifications such as voltage, current rating, and R_DS(on) to ensure compatibility in your specific application.
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