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IRFP4468PBF
IRFP4468 - 12V-300V N-CHANNEL PO
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- Mfr。パート #IRFP4468PBF
- パッケージ TO247
- データシート
- 在庫中7666
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仕様
| Package | Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 195A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 2.6mOhm @ 180A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 540 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 19860 pF @ 50 V |
| PowerDissipation(Max) | 520W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
概要
Description
The IRFP4468PBF is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-performance power applications. It features a low on-resistance (R_DS(on)) and high current capacity, making it suitable for use in power management, motor control, and switching applications. With a maximum drain-source voltage (V_DSS) of 55V and a continuous drain current (I_D) of around 90A, it can efficiently handle significant power loads.
The device operates with a threshold voltage (V_GS(th)) between 2V to 4V, which allows for efficient driving with low gate voltages. Its fast switching speeds and low gate charge (Q_g) contribute to improved efficiency in circuits, minimizing power losses. The IRFP4468PBF is also packaged in a TO-220 format, which aids in heat dissipation.
This MOSFET is ideal for use in applications where thermal management and efficiency are critical, such as in automotive, renewable energy systems, and industrial automation. Its robustness and reliability make it a popular choice among engineers designing power electronic circuits.
The device operates with a threshold voltage (V_GS(th)) between 2V to 4V, which allows for efficient driving with low gate voltages. Its fast switching speeds and low gate charge (Q_g) contribute to improved efficiency in circuits, minimizing power losses. The IRFP4468PBF is also packaged in a TO-220 format, which aids in heat dissipation.
This MOSFET is ideal for use in applications where thermal management and efficiency are critical, such as in automotive, renewable energy systems, and industrial automation. Its robustness and reliability make it a popular choice among engineers designing power electronic circuits.
Features
The IRFP4468PBF is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V.
2. Continuous Drain Current: Can handle a continuous current of up to 80A, making it suitable for power applications.
3. Low R_DS(on): Offers a low on-resistance (R_DS(on)) of about 8 mΩ (at V_GS = 10V), enhancing efficiency and reducing heat generation.
4. Fast Switching Speed: Designed for rapid switching, which is beneficial in applications like power supplies and motor drives.
5. Thermal Performance: Features a maximum junction temperature of 175°C, allowing for robust operation in demanding environments.
6. TO-220 Package: Housed in a TO-220 package, facilitating effective heat dissipation.
7. Applications: Ideal for use in automotive, industrial, and power management systems.
This combination of features makes the IRFP4468PBF suitable for a wide range of power-related applications.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V.
2. Continuous Drain Current: Can handle a continuous current of up to 80A, making it suitable for power applications.
3. Low R_DS(on): Offers a low on-resistance (R_DS(on)) of about 8 mΩ (at V_GS = 10V), enhancing efficiency and reducing heat generation.
4. Fast Switching Speed: Designed for rapid switching, which is beneficial in applications like power supplies and motor drives.
5. Thermal Performance: Features a maximum junction temperature of 175°C, allowing for robust operation in demanding environments.
6. TO-220 Package: Housed in a TO-220 package, facilitating effective heat dissipation.
7. Applications: Ideal for use in automotive, industrial, and power management systems.
This combination of features makes the IRFP4468PBF suitable for a wide range of power-related applications.
Package
The IRFP4468PBF is packaged in a TO-220 casing. This package type features a three-pin configuration, providing robust thermal performance and ease of mounting for power applications.
Pinout
The IRFP4468PBF is an N-channel MOSFET with a total of 3 pins.
Pin Configuration:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): The current flows into this pin when the MOSFET is on. It connects to the load in a switching application.
3. Source (S): This pin is the output. It connects to the ground or negative side of the power supply.
Functionality:
The IRFP4468PBF is designed for high-efficiency switching applications, such as inverters and power converters. With a low on-resistance (R_DS(on)) and high breakdown voltage, it is suitable for handling significant power levels in various electronic circuits.
Pin Configuration:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D): The current flows into this pin when the MOSFET is on. It connects to the load in a switching application.
3. Source (S): This pin is the output. It connects to the ground or negative side of the power supply.
Functionality:
The IRFP4468PBF is designed for high-efficiency switching applications, such as inverters and power converters. With a low on-resistance (R_DS(on)) and high breakdown voltage, it is suitable for handling significant power levels in various electronic circuits.
Manufacturer
The IRFP4468PBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer based in Germany, specializing in power semiconductors, microcontrollers, and sensors. The company focuses on various markets, including automotive, industrial, and consumer electronics, providing innovative solutions that enhance energy efficiency and performance. Infineon is known for its commitment to sustainability and advancing technologies in areas such as electric mobility and the Internet of Things (IoT).
Application
The IRFP4468PBF is a high-performance N-channel MOSFET used in various applications, including power supplies, motor drives, and inverters. It is suitable for switching applications in industrial equipment, solar inverters, and electric vehicles due to its low on-resistance and high-speed switching capabilities. Additionally, it can be utilized in DC-DC converters and audio amplifier output stages.
Equivalent
Equivalent products to the IRFP4468PBF MOSFET include the IRF3205, STP75NF75, and FDP7530. These MOSFETs share similar voltage and current ratings, typically suitable for high-speed switching applications. Always verify specifications such as Rds(on), Vds, and Id to ensure compatibility for your specific application.
出荷
出荷方法私たち
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル(0.1kg)で、推定配送時間は5〜20営業日です。
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