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IRFP4310ZPBF
MOSFET N-CH 100V 120A TO247AC
- メーカー
- Mfr。パート #IRFP4310ZPBF
- パッケージ TO-247-3
- データシート IRFP4310ZPBF DataSheet
- 在庫中7552
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仕様
| Package | Tube |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 120A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 6mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 170 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 6860 pF @ 50 V |
| PowerDissipation(Max) | 280W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
概要
Description
The IRFP4310ZPBF is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power switching applications. It is part of the International Rectifier’s family of MOSFETs, offering low on-resistance and high-speed switching capabilities. Key specifications include a maximum drain-source voltage (V_DS) of 100V, continuous drain current (I_D) of up to 60A, and a low on-resistance (R_DS(on)) of around 0.045 ohms at a gate-source voltage (V_GS) of 10V, which enables minimal power loss during operation.
The IRFP4310ZPBF is suitable for applications such as DC-DC converters, motor drives, and power inverters. Its robust thermal performance allows it to handle significant power loads, making it ideal for industrial and automotive applications. The device is available in a TO-220 package, facilitating easy heat dissipation. The "Z" in its designation indicates a specific version optimized for improved performance. Overall, the IRFP4310ZPBF combines high reliability with efficient performance, making it a popular choice in power electronics design.
The IRFP4310ZPBF is suitable for applications such as DC-DC converters, motor drives, and power inverters. Its robust thermal performance allows it to handle significant power loads, making it ideal for industrial and automotive applications. The device is available in a TO-220 package, facilitating easy heat dissipation. The "Z" in its designation indicates a specific version optimized for improved performance. Overall, the IRFP4310ZPBF combines high reliability with efficient performance, making it a popular choice in power electronics design.
Features
The IRFP4310ZPBF is an N-channel MOSFET designed for high-efficiency power switching applications. Key features include:
1. Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: It can handle continuous drain current (I_D) of up to 94A at 25°C, making it suitable for high-current applications.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically around 0.045 ohms, ensuring minimal power loss during operation.
4. Fast Switching Speed: The MOSFET supports fast switching, enhancing efficiency in applications like DC-DC converters and motor drives.
5. Thermal Performance: It features a TO-220 package providing good thermal dissipation, allowing it to operate effectively in high-temperature environments.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy driving with standard gate voltages.
These features make the IRFP4310ZPBF suitable for various applications in power management, automotive, and industrial systems.
1. Voltage Rating: The device has a maximum drain-source voltage (V_DS) of 100V.
2. Current Rating: It can handle continuous drain current (I_D) of up to 94A at 25°C, making it suitable for high-current applications.
3. Low On-Resistance: The on-resistance (R_DS(on)) is typically around 0.045 ohms, ensuring minimal power loss during operation.
4. Fast Switching Speed: The MOSFET supports fast switching, enhancing efficiency in applications like DC-DC converters and motor drives.
5. Thermal Performance: It features a TO-220 package providing good thermal dissipation, allowing it to operate effectively in high-temperature environments.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy driving with standard gate voltages.
These features make the IRFP4310ZPBF suitable for various applications in power management, automotive, and industrial systems.
Package
The IRFP4310ZPBF is packaged in a TO-220 form factor. This package type features a three-lead design, allowing for efficient heat dissipation and easy mounting on heatsinks, making it suitable for high-power applications.
Pinout
The IRFP4310ZPBF is an N-channel MOSFET with a total of 3 pins. The pin configuration is as follows:
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to this pin allows current to flow from the drain to the source.
2. Drain (D) - This pin is where the output current flows into the device. It's connected to the load in the circuit.
3. Source (S) - This pin is connected to the ground or the point of lowest potential in the circuit.
The IRFP4310ZPBF is designed for applications requiring high speed switching and high current handling capability, making it suitable for power management, motor control, and other high-efficiency applications. It features low on-resistance and high breakdown voltage, facilitating effective thermal management and reliability in various electronic circuits.
1. Gate (G) - This pin is used to control the MOSFET. Applying a voltage to this pin allows current to flow from the drain to the source.
2. Drain (D) - This pin is where the output current flows into the device. It's connected to the load in the circuit.
3. Source (S) - This pin is connected to the ground or the point of lowest potential in the circuit.
The IRFP4310ZPBF is designed for applications requiring high speed switching and high current handling capability, making it suitable for power management, motor control, and other high-efficiency applications. It features low on-resistance and high breakdown voltage, facilitating effective thermal management and reliability in various electronic circuits.
Manufacturer
The IRFP4310ZPBF is manufactured by Infineon Technologies AG, a global semiconductor manufacturer based in Germany. Infineon specializes in a wide range of technologies, including automotive, industrial power control, and security solutions. The company is known for producing high-performance products in the field of power management, RF communication, and microcontrollers, serving various industries such as automotive, consumer electronics, and renewable energy. Infineon is recognized for its commitment to innovation and sustainability, focusing on energy efficiency and environmental responsibility in its product development.
Application
The IRFP4310ZPBF is a high-performance N-channel MOSFET used in various applications, including power supplies, motor drivers, and DC-DC converters. Its features make it suitable for high-efficiency switching applications, such as in electric vehicles, renewable energy systems (like solar inverters), and industrial automation. Its low on-resistance and rapid switching capabilities also enhance performance in audio amplifiers and power management circuits.
Equivalent
Equivalent products to the IRFP4310ZPBF MOSFET include the IRF3205, STP55NF06L, and FQP50N06L. These alternatives have similar specifications, such as voltage ratings around 55V and current ratings around 100A. Always verify datasheets to ensure compatibility with your specific application.
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出荷料参照(DHL/FedEx):
DHL の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル(0.5kg)の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル(0.5kg)の範囲で、推定配送時間は7〜15営業日です。
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