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IRFP4110PBF
IRFP4110 - 12V-300V N-CHANNEL PO
- メーカー
- Mfr。パート #IRFP4110PBF
- パッケージ TO247
- データシート
- 在庫中6328
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仕様
| Package | Bulk |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 100 V |
| Current-ContinuousDrain(Id)@25°C | 120A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 4.5mOhm @ 75A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 210 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 9620 pF @ 50 V |
| PowerDissipation(Max) | 370W (Tc) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Through Hole |
| SupplierDevicePackage | TO-247AC |
概要
Description
The IRFP4110PBF is a high-performance N-channel MOSFET designed for power applications. It features a low on-resistance (R_DS(on)) of around 4.5 mΩ, allowing for efficient current flow and reduced heat generation in switching applications. With a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of up to 110A, it is well-suited for high-power converters, motor drives, and other applications requiring robust performance.
The device is packaged in a TO-220 configuration, facilitating effective heat dissipation and easy mounting on heat sinks. It has a gate threshold voltage (V_GS(th)) ranging from 2V to 4V, making it suitable for logic-level gate drive applications. The IRFP4110PBF also features fast switching capabilities, which enhance efficiency in PWM (Pulse Width Modulation) applications.
As part of International Rectifier's product line, this MOSFET is noted for reliability and performance in harsh environments, making it a preferred choice for designers seeking robust solutions in power electronics.
The device is packaged in a TO-220 configuration, facilitating effective heat dissipation and easy mounting on heat sinks. It has a gate threshold voltage (V_GS(th)) ranging from 2V to 4V, making it suitable for logic-level gate drive applications. The IRFP4110PBF also features fast switching capabilities, which enhance efficiency in PWM (Pulse Width Modulation) applications.
As part of International Rectifier's product line, this MOSFET is noted for reliability and performance in harsh environments, making it a preferred choice for designers seeking robust solutions in power electronics.
Features
The IRFP4110PBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V, suitable for various power applications.
2. Current Handling: Can handle a continuous drain current (I_D) of up to 110A, ensuring robust performance in demanding conditions.
3. On-Resistance: Low on-resistance (R_DS(on)) of approximately 0.045 ohms at V_GS = 10V, minimizing power loss during operation.
4. Gate Threshold Voltage: Gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy interfacing with low-voltage control signals.
5. Fast Switching Speed: Capable of fast switching, enhancing efficiency in applications like DC-DC converters and motor drivers.
6. Package Type: Available in TO-220 package, which aids in heat dissipation.
7. High Thermal Stability: Built to handle high temperatures, contributing to reliability in various environments.
Overall, the IRFP4110PBF is ideal for high-power and high-efficiency circuits.
1. Voltage Rating: Maximum drain-source voltage (V_DS) of 100V, suitable for various power applications.
2. Current Handling: Can handle a continuous drain current (I_D) of up to 110A, ensuring robust performance in demanding conditions.
3. On-Resistance: Low on-resistance (R_DS(on)) of approximately 0.045 ohms at V_GS = 10V, minimizing power loss during operation.
4. Gate Threshold Voltage: Gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy interfacing with low-voltage control signals.
5. Fast Switching Speed: Capable of fast switching, enhancing efficiency in applications like DC-DC converters and motor drivers.
6. Package Type: Available in TO-220 package, which aids in heat dissipation.
7. High Thermal Stability: Built to handle high temperatures, contributing to reliability in various environments.
Overall, the IRFP4110PBF is ideal for high-power and high-efficiency circuits.
Package
The IRFP4110PBF is packaged in a TO-220 housing. This type of package is commonly used for power MOSFETs, allowing for efficient heat dissipation and easy mounting on heatsinks.
Pinout
The IRFP4110PBF is a N-channel MOSFET that typically comes in a TO-220 package, featuring a pin count of three. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the output pin where the current flows out of the MOSFET. It connects to the load or power supply.
3. Source (S): This pin is the input for current. It typically connects to ground or the negative side of the circuit.
The IRFP4110PBF is characterized by a low on-resistance and high-speed switching capabilities, making it suitable for various applications including power management, motor control, and DC-DC converters.
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.
2. Drain (D): This is the output pin where the current flows out of the MOSFET. It connects to the load or power supply.
3. Source (S): This pin is the input for current. It typically connects to ground or the negative side of the circuit.
The IRFP4110PBF is characterized by a low on-resistance and high-speed switching capabilities, making it suitable for various applications including power management, motor control, and DC-DC converters.
Manufacturer
The IRFP4110PBF is manufactured by Infineon Technologies AG, a German semiconductor manufacturer. Infineon specializes in producing a wide range of semiconductor solutions, including power semiconductors, microcontrollers, and sensors. The company's products are used in various applications, such as automotive, industrial, and consumer electronics. Infineon is known for its innovation in power management and efficiency, addressing the growing demand for energy-saving solutions in modern technology.
Application
The IRFP4110PBF is a N-channel MOSFET widely used in applications such as power management, motor control, DC-DC converters, and switch-mode power supplies. Its high voltage and current ratings make it suitable for automotive applications, inverter systems, and lighting control. Additionally, it’s utilized in renewable energy systems like solar inverters and battery management systems.
Equivalent
The IRFP4110PBF is a N-channel MOSFET. Equivalent products include:
1. STP75NF75 - STMicroelectronics
2. FDP75N06 - Fairchild Semiconductor
3. BTA10-600V - ON Semiconductor
4. MTP75N06 - ON Semiconductor
Always check the datasheet for specific parameters to ensure compatibility with your application.
1. STP75NF75 - STMicroelectronics
2. FDP75N06 - Fairchild Semiconductor
3. BTA10-600V - ON Semiconductor
4. MTP75N06 - ON Semiconductor
Always check the datasheet for specific parameters to ensure compatibility with your application.
出荷
出荷方法私たち
DHL、FedEx、TNT、UPS、またはあなたの選択の他の運送業者を通じてグローバルな出荷サービスを提供します。
出荷料参照（DHL/FedEx）:
DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。
フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。
UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。
TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。
EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。
登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。
支払い
Payment Methods
支払い期間は100％前払いです。
現在、下記の支払い方法のみを受け入れています。:
1. ペイパル
2. クレジット・デビットカード
3. ワイヤー 転送
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