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IRFP3703
MOSFET N-CH 30V 210A TO247AC
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- Mfr。パート #IRFP3703
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- データシート IRFP3703 DataSheet
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仕様
| Series | HEXFET® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 210A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Rds On (Max) @ Id, Vgs | 2.8mOhm @ 76A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 209 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 8250 pF @ 25 V |
| Power Dissipation (Max) | 3.8W (Ta), 230W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AC |
| Package / Case | TO-247-3 |
概要
Description
IRFP3703 is a high-voltage, N-channel MOSFET designed for various power electronics applications. It features a low on-resistance (R_DS(on)) and high-speed switching capabilities, making it suitable for use in power supplies, motor drives, and automotive applications. The device can handle high currents and voltages, typically up to 55V and 70A, providing efficient performance in switching applications.
Key characteristics include a low gate threshold voltage, which allows for easier drive requirements, and a fast switching speed, ensuring minimal power loss during operation. The IRFP3703 is commonly packaged in a TO-220 or similar housing, facilitating heat dissipation and ease of mounting.
Due to its robust design and performance specifications, the IRFP3703 is favored in applications where efficiency and reliability are critical. Proper thermal management and circuit design are essential to maximize its performance and longevity. Overall, this MOSFET plays a vital role in modern power electronics by enabling efficient energy conversion and management.
Key characteristics include a low gate threshold voltage, which allows for easier drive requirements, and a fast switching speed, ensuring minimal power loss during operation. The IRFP3703 is commonly packaged in a TO-220 or similar housing, facilitating heat dissipation and ease of mounting.
Due to its robust design and performance specifications, the IRFP3703 is favored in applications where efficiency and reliability are critical. Proper thermal management and circuit design are essential to maximize its performance and longevity. Overall, this MOSFET plays a vital role in modern power electronics by enabling efficient energy conversion and management.
Features
The IRFP3703 is a N-channel MOSFET designed for high-speed switching applications. Here are its key features:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 100V, making it suitable for various high-voltage applications.
2. Current Rating: The maximum continuous drain current (ID) is 55A at a temperature of 25°C, providing robust performance in power circuits.
3. RDS(on): It boasts a low on-resistance (RDS(on)) of approximately 0.05 ohms, which helps in reducing conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 2V to 4V, allowing for effective drive from low-voltage control circuits.
5. Fast Switching: The device exhibits high-speed switching characteristics, making it suitable for applications in power supplies, motor control, and DC-DC converters.
6. Package Type: Typically available in a TO-220 package, facilitating efficient heat dissipation.
These features make the IRFP3703 ideal for use in various electronic and power control applications.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 100V, making it suitable for various high-voltage applications.
2. Current Rating: The maximum continuous drain current (ID) is 55A at a temperature of 25°C, providing robust performance in power circuits.
3. RDS(on): It boasts a low on-resistance (RDS(on)) of approximately 0.05 ohms, which helps in reducing conduction losses.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 2V to 4V, allowing for effective drive from low-voltage control circuits.
5. Fast Switching: The device exhibits high-speed switching characteristics, making it suitable for applications in power supplies, motor control, and DC-DC converters.
6. Package Type: Typically available in a TO-220 package, facilitating efficient heat dissipation.
These features make the IRFP3703 ideal for use in various electronic and power control applications.
Package
The IRFP3703 is typically available in a TO-220 package type. This package is designed for high-power applications, providing good thermal performance and is easy to mount on heatsinks for improved heat dissipation.
Pinout
The IRFP3703 is an N-channel MOSFET with a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G): The control terminal, which receives the input signal to turn the MOSFET on or off.
2. Drain (D): The terminal where the output current flows out of the MOSFET.
3. Source (S): The terminal that connects to the ground or the lower potential side of the circuit; it is where the current flows into the MOSFET.
Additionally, the MOSFET is designed for high-efficiency switching applications, with a maximum drain-source voltage (V_DS) of 100V and a maximum continuous drain current (I_D) of 62A. The IRFP3703 is commonly used in power management, motor control, and DC-DC converter applications.
1. Gate (G): The control terminal, which receives the input signal to turn the MOSFET on or off.
2. Drain (D): The terminal where the output current flows out of the MOSFET.
3. Source (S): The terminal that connects to the ground or the lower potential side of the circuit; it is where the current flows into the MOSFET.
Additionally, the MOSFET is designed for high-efficiency switching applications, with a maximum drain-source voltage (V_DS) of 100V and a maximum continuous drain current (I_D) of 62A. The IRFP3703 is commonly used in power management, motor control, and DC-DC converter applications.
Manufacturer
The IRFP3703 is manufactured by International Rectifier, which is now part of Infineon Technologies. International Rectifier was known for producing power management semiconductors and integrated circuits, specializing in MOSFETs, IGBTs, and other components used in power electronics applications. The company focused on providing solutions for various markets, including automotive, industrial, and consumer electronics. Infineon Technologies, a global semiconductor manufacturer based in Germany, acquired International Rectifier in 2015, enhancing its portfolio in power semiconductor technology.
Application
The IRFP3703 is an N-channel MOSFET primarily used in high-power applications such as DC-DC converters, motor control, and power inverters. It is suitable for use in electric vehicles, renewable energy systems, and industrial equipment due to its high efficiency, low on-resistance, and fast switching capabilities. Additionally, it is often employed in audio amplifiers and power supply circuits.
Equivalent
The IRFP3703 is a N-channel MOSFET used in power applications. Equivalent products include:
1. IRF3708
2. IRF3710
3. STP75NF75
4. STP55NF06
5. FQP30N06L
Always verify specifications such as voltage, current ratings, and RDS(on) before substitution.
1. IRF3708
2. IRF3710
3. STP75NF75
4. STP55NF06
5. FQP30N06L
Always verify specifications such as voltage, current ratings, and RDS(on) before substitution.
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