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IRFL014TRPBF
MOSFET N-CH 60V 2.7A SOT223
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- Mfr。パート #IRFL014TRPBF
- パッケージ
- データシート IRFL014TRPBF DataSheet
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仕様
| Supplier | Vishay Siliconix |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 2.7A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 200mOhm @ 1.6A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 11 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 300 pF @ 25 V |
| PowerDissipation(Max) | 2W (Ta), 3.1W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223 |
概要
Description
IRFL014TRPBF is a specific type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by International Rectifier, designed for various electronic applications. It typically features low on-resistance, high-speed switching, and excellent thermal performance, making it suitable for power management, switch-mode power supplies, and motor control applications. The “TR” in the part number indicates that it is available in a tape and reel packaging, facilitating automated assembly processes. The “PBF” suffix denotes that it is lead-free, adhering to environmental regulations like RoHS (Restriction of Hazardous Substances). Overall, IRFL014TRPBF is valued for its efficiency and reliability in power electronics, contributing to the performance and longevity of devices in which it is employed.
Features
The IRFL014TRPBF is an N-channel MOSFET designed for high-speed switching applications. Key features include:
1. Voltage Rating: It offers a maximum drain-source voltage (V_DS) of 40V, making it suitable for a variety of applications.
2. Current Handling: With a maximum continuous drain current (I_D) of 50A, it is capable of handling substantial power levels.
3. On-Resistance: It has a low R_DS(on) of around 0.045 Ω, which minimizes power loss during operation and enhances efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is typically between 2V and 4V, allowing it to be driven by standard logic levels.
5. Package: It comes in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Applications: Commonly used in power supplies, motor drives, and other high-frequency switching applications.
These characteristics make the IRFL014TRPBF a versatile choice for designers seeking reliability and efficiency in their circuits.
1. Voltage Rating: It offers a maximum drain-source voltage (V_DS) of 40V, making it suitable for a variety of applications.
2. Current Handling: With a maximum continuous drain current (I_D) of 50A, it is capable of handling substantial power levels.
3. On-Resistance: It has a low R_DS(on) of around 0.045 Ω, which minimizes power loss during operation and enhances efficiency.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is typically between 2V and 4V, allowing it to be driven by standard logic levels.
5. Package: It comes in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Applications: Commonly used in power supplies, motor drives, and other high-frequency switching applications.
These characteristics make the IRFL014TRPBF a versatile choice for designers seeking reliability and efficiency in their circuits.
Package
The IRFL014TRPBF is packaged in a TO-220 form factor. This package type is known for its robust thermal performance and is commonly used for power MOSFETs, allowing for effective heat dissipation in various electronic applications.
Pinout
The IRFL014TRPBF is an N-channel MOSFET with a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied here allows current to flow between the drain and source.
2. Drain (D) - This pin connects to the load, where the current flows out of the MOSFET.
3. Source (S) - This pin is connected to ground (or negative supply) in typical configurations, allowing current to enter the MOSFET.
4. Source (S) - This pin is also utilized as a thermal reference point in some applications.
The IRFL014TRPBF is designed for high-speed switching and has a low on-resistance, making it suitable for power management applications.
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied here allows current to flow between the drain and source.
2. Drain (D) - This pin connects to the load, where the current flows out of the MOSFET.
3. Source (S) - This pin is connected to ground (or negative supply) in typical configurations, allowing current to enter the MOSFET.
4. Source (S) - This pin is also utilized as a thermal reference point in some applications.
The IRFL014TRPBF is designed for high-speed switching and has a low on-resistance, making it suitable for power management applications.
Manufacturer
The IRFL014TRPBF is manufactured by Texas Instruments, a global semiconductor company. Texas Instruments specializes in designing and manufacturing a wide range of analog and digital semiconductor products, including integrated circuits, microcontrollers, and power management solutions. The company serves various industries, including automotive, industrial, communications, and consumer electronics. Texas Instruments is known for its innovation in analog technology and its commitment to providing efficient and reliable solutions for electronic systems.
Application
The IRFL014TRPBF is an N-channel MOSFET primarily used in power management applications. Its key application areas include motor drives, power supplies, DC-DC converters, and electronic switch circuits. It is suitable for high-efficiency power conversion and can handle high current loads, making it ideal for automotive, industrial, and consumer electronics applications.
Equivalent
The IRFL014TRPBF is an N-channel MOSFET. Equivalent products include the FQP30N06L, STP30NF06, and BUZ11. Always verify specifications such as voltage, current ratings, and RDS(on) before substituting.
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