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IRFH8318TRPBF
MOSFET N-CH 30V 27A/120A PQFN
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- Mfr。パート #IRFH8318TRPBF
- パッケージ PQFN-8
- データシート IRFH8318TRPBF DataSheet
- 在庫中7082
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仕様
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 27A (Ta), 120A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 3.1mOhm @ 20A, 10V |
| Vgs(th)(Max)@Id | 2.35V @ 50µA |
| GateCharge(Qg)(Max)@Vgs | 41 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 3180 pF @ 10 V |
| PowerDissipation(Max) | 3.6W (Ta), 59W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | PQFN (5x6) |
概要
Description
IRFH8318TRPBF is a specific model of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features low on-resistance, high voltage tolerance, and fast switching capabilities, making it suitable for power management, automotive applications, and various electronic circuits.
Key specifications often include a maximum drain-source voltage (V_DS), continuous drain current (I_D), and gate threshold voltage (V_GS(th)). The "TRPBF" designation indicates that it is offered in a tape-and-reel packaging for automated assembly processes and is compliant with RoHS (Restriction of Hazardous Substances) standards, ensuring environmental safety.
Its robust performance and reliability make it a popular choice in the design of power supplies, motor drivers, and other electronic devices where efficient power management is essential. For detailed characteristics, consulting the manufacturer's datasheet is recommended.
Key specifications often include a maximum drain-source voltage (V_DS), continuous drain current (I_D), and gate threshold voltage (V_GS(th)). The "TRPBF" designation indicates that it is offered in a tape-and-reel packaging for automated assembly processes and is compliant with RoHS (Restriction of Hazardous Substances) standards, ensuring environmental safety.
Its robust performance and reliability make it a popular choice in the design of power supplies, motor drivers, and other electronic devices where efficient power management is essential. For detailed characteristics, consulting the manufacturer's datasheet is recommended.
Features
The IRFH8318TRPBF is a N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 75A, allowing it to manage significant load requirements.
3. On-Resistance: The MOSFET boasts a low on-resistance (Rds(on)) of approximately 8.5 mΩ at a gate-source voltage (Vgs) of 10V, ensuring efficient operation with minimal power loss.
4. Fast Switching: It offers fast switching capabilities, making it ideal for applications like power management and DC-DC converters.
5. Package: The IRFH8318TRPBF is housed in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges between 2V to 4V, allowing for effective control in low-voltage circuits.
Overall, the IRFH8318TRPBF is suitable for various applications, including automotive, industrial, and consumer electronics, due to its robust performance and efficiency.
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (Id) of up to 75A, allowing it to manage significant load requirements.
3. On-Resistance: The MOSFET boasts a low on-resistance (Rds(on)) of approximately 8.5 mΩ at a gate-source voltage (Vgs) of 10V, ensuring efficient operation with minimal power loss.
4. Fast Switching: It offers fast switching capabilities, making it ideal for applications like power management and DC-DC converters.
5. Package: The IRFH8318TRPBF is housed in a TO-220 package, facilitating easy heat dissipation and mounting.
6. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) ranges between 2V to 4V, allowing for effective control in low-voltage circuits.
Overall, the IRFH8318TRPBF is suitable for various applications, including automotive, industrial, and consumer electronics, due to its robust performance and efficiency.
Package
The IRFH8318TRPBF is packaged in a DPAK (TO-252) format. This package type is typically used for surface-mount devices and features a compact design suitable for power applications.
Pinout
The IRFH8318TRPBF is an N-channel MOSFET with a total of 8 pins. Its primary functions include acting as a switch to control the flow of electrical current in various applications, such as power management and motor control.
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching action.
2. Drain (D) - The terminal that receives the current.
3. Source (S) - The terminal through which the current exits.
4. Other pins - Typically include additional source and drain connections for enhanced thermal performance and current handling capabilities.
The IRFH8318TRPBF is known for its low on-resistance and high-speed switching capabilities, making it suitable for high-efficiency applications. It is commonly used in power supplies, automotive systems, and other electronic devices requiring efficient power management.
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching action.
2. Drain (D) - The terminal that receives the current.
3. Source (S) - The terminal through which the current exits.
4. Other pins - Typically include additional source and drain connections for enhanced thermal performance and current handling capabilities.
The IRFH8318TRPBF is known for its low on-resistance and high-speed switching capabilities, making it suitable for high-efficiency applications. It is commonly used in power supplies, automotive systems, and other electronic devices requiring efficient power management.
Manufacturer
The manufacturer of the IRFH8318TRPBF is Infineon Technologies. Infineon is a global semiconductor company that specializes in the development and production of a wide range of semiconductor solutions. Their products are used in various applications, including automotive, industrial, and consumer electronics. Infineon focuses on areas such as power management, automotive safety, and connectivity technologies. The company is known for its innovation in power semiconductors, particularly in the areas of MOSFETs and IGBTs, which are essential for efficient energy conversion and management. Infineon Technologies plays a significant role in advancing technologies that contribute to energy efficiency and sustainability.
Application
The IRFH8318TRPBF is a high-performance N-channel MOSFET primarily used in power management applications. Key areas include DC-DC converters, motor drives, and power supplies. Its low on-resistance and fast switching capabilities make it suitable for automotive, industrial automation, and renewable energy systems. Additionally, it is utilized in battery management systems and efficient power distribution applications.
Equivalent
The IRFH8318TRPBF is a N-channel MOSFET. Equivalent products include the AON7410, MMBF370, and BSS138. However, always verify specifications such as voltage, current ratings, and RDS(on) to ensure compatibility for your application.
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