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IRFH6200TRPBF
MOSFET N-CH 20V 49A/100A 8PQFN
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- Mfr。パート #IRFH6200TRPBF
- パッケージ
- データシート IRFH6200TRPBF DataSheet
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仕様
| Supplier | Infineon Technologies |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | HEXFET® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 49A (Ta), 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 2.5V, 10V |
| RdsOn(Max)@IdVgs | 0.95mOhm @ 50A, 10V |
| Vgs(th)(Max)@Id | 1.1V @ 150µA |
| GateCharge(Qg)(Max)@Vgs | 230 nC @ 4.5 V |
| Vgs(Max) | ±12V |
| InputCapacitance(Ciss)(Max)@Vds | 10890 pF @ 10 V |
| PowerDissipation(Max) | 3.6W (Ta), 156W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-PQFN (5x6) |
概要
Description
The IRFH6200TRPBF is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features low on-resistance and fast switching capabilities, making it suitable for various electronic devices and power management systems. Typically, it is used in applications such as DC-DC converters, motor drivers, and power supplies.
Key specifications include a maximum drain-source voltage (Vds) of 60V, a continuous drain current (Id) rating of up to 90A, and low thermal resistance, allowing for efficient heat dissipation. Its compact package (DPAK) facilitates easy integration into circuit designs, contributing to smaller footprints in electronic devices.
The "TRPBF" designation indicates that the product is RoHS compliant, meaning it is free from hazardous substances. This aspect is crucial for environmentally conscious manufacturing processes. Overall, the IRFH6200TRPBF is a reliable choice for engineers seeking efficient power management solutions in modern electronic applications.
Key specifications include a maximum drain-source voltage (Vds) of 60V, a continuous drain current (Id) rating of up to 90A, and low thermal resistance, allowing for efficient heat dissipation. Its compact package (DPAK) facilitates easy integration into circuit designs, contributing to smaller footprints in electronic devices.
The "TRPBF" designation indicates that the product is RoHS compliant, meaning it is free from hazardous substances. This aspect is crucial for environmentally conscious manufacturing processes. Overall, the IRFH6200TRPBF is a reliable choice for engineers seeking efficient power management solutions in modern electronic applications.
Features
The IRFH6200TRPBF is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 60V.
2. Current Rating: The continuous drain current (ID) is up to 120A, making it suitable for handling substantial loads.
3. RDS(on): It offers a low on-resistance (RDS(on)) value, typically around 6.5 mΩ, which minimizes power loss and improves thermal performance.
4. Package Type: The device comes in a TO-220 package, facilitating effective heat dissipation and easy integration into circuits.
5. Fast Switching: It supports high-speed switching, making it ideal for applications like DC-DC converters, motor drives, and power supplies.
6. Thermal Resistance: The thermal resistance junction-to-case (RθJC) is low, allowing for efficient heat management.
Overall, the IRFH6200TRPBF is suitable for high-performance power management and switching applications in various electronic devices.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 60V.
2. Current Rating: The continuous drain current (ID) is up to 120A, making it suitable for handling substantial loads.
3. RDS(on): It offers a low on-resistance (RDS(on)) value, typically around 6.5 mΩ, which minimizes power loss and improves thermal performance.
4. Package Type: The device comes in a TO-220 package, facilitating effective heat dissipation and easy integration into circuits.
5. Fast Switching: It supports high-speed switching, making it ideal for applications like DC-DC converters, motor drives, and power supplies.
6. Thermal Resistance: The thermal resistance junction-to-case (RθJC) is low, allowing for efficient heat management.
Overall, the IRFH6200TRPBF is suitable for high-performance power management and switching applications in various electronic devices.
Package
The IRFH6200TRPBF is packaged in a TO-220 form factor. This type of package is designed for high-power applications, providing effective heat dissipation and is suitable for mounting on heatsinks.
Pinout
The IRFH6200TRPBF is a N-channel MOSFET with a pin count of 5. Its primary functions include switching and amplifying electronic signals in various applications, such as power management and motor control.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching behavior.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): Common terminal connected to ground or the negative side of the circuit.
4. Body Diode: Integrated diode that provides reverse current capability.
5. Thermal Pad: A feature for heat dissipation, often connected to a PCB for effective thermal management.
The IRFH6200TRPBF is characterized by high efficiency, low R_DS(on), and fast switching speeds, making it suitable for high-performance applications.
The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's switching behavior.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): Common terminal connected to ground or the negative side of the circuit.
4. Body Diode: Integrated diode that provides reverse current capability.
5. Thermal Pad: A feature for heat dissipation, often connected to a PCB for effective thermal management.
The IRFH6200TRPBF is characterized by high efficiency, low R_DS(on), and fast switching speeds, making it suitable for high-performance applications.
Manufacturer
The IRFH6200TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor company headquartered in Neubiberg, Germany. It specializes in providing a wide range of semiconductor and system solutions, focusing on applications in automotive, industrial power control, and digital security. Infineon is known for its innovations in power management, sensor technology, and microcontrollers, serving various industries including automotive, aerospace, consumer electronics, and renewable energy. The company emphasizes sustainability and energy efficiency in its product offerings.
Application
The IRFH6200TRPBF is a N-channel MOSFET designed for various applications, including power management, DC-DC converters, and motor control. Its low on-resistance and high-speed switching capabilities make it suitable for use in telecommunications, industrial automation, and consumer electronics, particularly in power supply circuits and battery management systems.
Equivalent
The IRFH6200TRPBF is a N-channel MOSFET. Equivalent products include the STP75NF75, FQP75N75, and AOD7N75. When searching for equivalents, ensure they match specifications like voltage rating, current rating, and RDS(on) for compatibility. Always consult the datasheets to verify exact matches for your application.
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