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IRFH5406TRPBF
MOSFET N-CH 60V 11A/40A 8PQFN
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- Mfr。パート #IRFH5406TRPBF
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- データシート IRFH5406TRPBF DataSheet
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仕様
| Series | HEXFET® |
| Part Status | Obsolete |
| Base Product Number | IRFH5406 |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 40A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 14.4mOhm @ 24A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1256 pF @ 25 V |
| Power Dissipation (Max) | 3.6W (Ta), 46W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6) |
| Package | 8-PowerVDFN |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
概要
Description
IRFH5406TRPBF is an N-channel MOSFET designed for power management applications. It features a low on-resistance (R_DS(on)) which enhances efficiency in power conversion and switching applications. With a maximum drain-source voltage of 60V and a continuous drain current rating of 30A, it is well-suited for applications such as motor control, power supplies, and DC-DC converters.
The device is packaged in a surface-mount configuration, making it suitable for compact designs. Its high-speed switching capabilities allow for quick response in dynamic applications, minimizing energy losses. The IRFH5406TRPBF also offers thermal stability, ensuring reliable operation under various conditions.
Overall, this MOSFET is ideal for engineers seeking robust performance in high-efficiency circuits.
The device is packaged in a surface-mount configuration, making it suitable for compact designs. Its high-speed switching capabilities allow for quick response in dynamic applications, minimizing energy losses. The IRFH5406TRPBF also offers thermal stability, ensuring reliable operation under various conditions.
Overall, this MOSFET is ideal for engineers seeking robust performance in high-efficiency circuits.
Features
The IRFH5406TRPBF is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, allowing it to handle significant voltage levels.
- Current Rating: The device can conduct a continuous drain current (I_D) of up to 60A, making it suitable for high-current applications.
- R_DS(on): It offers a low on-resistance (R_DS(on)) of around 6.6 mΩ at V_GS = 10V, which minimizes conduction losses and improves efficiency.
- Switching Speed: Fast switching capabilities support high-frequency operation in various applications.
- Package: Available in a DPAK package, providing good thermal performance and ease of mounting.
- Applications: Commonly used in power supplies, motor drivers, and other power management circuits.
Overall, the IRFH5406TRPBF is designed for robust performance in demanding electrical environments, delivering efficiency and reliability.
- Voltage Rating: It has a maximum drain-source voltage (V_DS) of 40V, allowing it to handle significant voltage levels.
- Current Rating: The device can conduct a continuous drain current (I_D) of up to 60A, making it suitable for high-current applications.
- R_DS(on): It offers a low on-resistance (R_DS(on)) of around 6.6 mΩ at V_GS = 10V, which minimizes conduction losses and improves efficiency.
- Switching Speed: Fast switching capabilities support high-frequency operation in various applications.
- Package: Available in a DPAK package, providing good thermal performance and ease of mounting.
- Applications: Commonly used in power supplies, motor drivers, and other power management circuits.
Overall, the IRFH5406TRPBF is designed for robust performance in demanding electrical environments, delivering efficiency and reliability.
Package
The IRFH5406TRPBF is packaged in a TO-220 format.
Pinout
The IRFH5406TRPBF is an N-channel MOSFET with a total of 8 pins. The pin configuration and their functions are as follows:
1. Gate (G) - Controls the MOSFET's switching on and off.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The input terminal connected to ground or the lower potential side of the circuit.
4. Body Diode - Internal to the MOSFET, allows current to flow from the source to drain when the MOSFET is off.
The device is designed for applications like motor control, power management, and DC-DC converters, with a maximum drain-source voltage of 55V and a continuous drain current of up to 54A. The IRFH5406TRPBF features a low R_DS(on), making it efficient for high-performance applications.
1. Gate (G) - Controls the MOSFET's switching on and off.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The input terminal connected to ground or the lower potential side of the circuit.
4. Body Diode - Internal to the MOSFET, allows current to flow from the source to drain when the MOSFET is off.
The device is designed for applications like motor control, power management, and DC-DC converters, with a maximum drain-source voltage of 55V and a continuous drain current of up to 54A. The IRFH5406TRPBF features a low R_DS(on), making it efficient for high-performance applications.
Manufacturer
The IRFH5406TRPBF is manufactured by Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Germany, specializing in the development and production of a wide range of semiconductor solutions. The company focuses on areas such as automotive electronics, industrial power control, and chip card and security technologies. Infineon is known for its commitment to innovation, efficiency, and sustainability in the semiconductor industry. Their products are used in various applications, including power management, automotive systems, and renewable energy.
Application
The IRFH5406TRPBF is a N-channel MOSFET used primarily in power management applications. Its application areas include DC-DC converters, power supplies, motor drives, and high-frequency switching applications. It is suitable for use in automotive, industrial, and consumer electronics due to its high efficiency and thermal performance.
Equivalent
The IRFH5406TRPBF is an N-channel MOSFET. Equivalent products include the STP16NF06, FQP30N06L, and PMPFJ30E. Always verify specifications such as voltage, current ratings, Rds(on), and package type before substituting.
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