IRFH5250TRPBF

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IRFH5250TRPBF

MOSFET N-CH 25V 45A/100A 8PQFN

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仕様

Package Tape & Reel (TR),Cut Tape (CT)
Series HEXFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 25 V
Current-ContinuousDrain(Id)@25°C 45A (Ta), 100A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 1.15mOhm @ 50A, 10V
Vgs(th)(Max)@Id 2.35V @ 150µA
GateCharge(Qg)(Max)@Vgs 110 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 7174 pF @ 13 V
PowerDissipation(Max) 3.6W (Ta), 160W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-PQFN (5x6)

概要

Description

IRFH5250TRPBF is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features low on-resistance, allowing it to effectively handle significant current loads while minimizing power loss. The MOSFET is commonly used in power management systems, DC-DC converters, and motor control applications due to its efficiency and reliability.
The part number indicates it is a RoHS-compliant product, emphasizing its suitability for environmentally-conscious designs. Key specifications typically include maximum voltage ratings, current ratings, and thermal characteristics, which determine its performance in various applications. Overall, IRFH5250TRPBF is a versatile component ideal for modern electronic design, providing efficient switching capabilities for both consumer and industrial applications.

Features

The IRFH5250TRPBF is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 25V, making it suitable for various low-voltage applications.
2. Current Rating: The device supports a continuous drain current (Id) of up to 50A, enabling robust performance in demanding environments.
3. On-Resistance (Rds(on)): With a low on-resistance of around 10 mΩ at a gate-source voltage (Vgs) of 10V, it ensures minimal power loss and heat generation during operation.
4. Gate Threshold Voltage: The gate threshold voltage (Vgs(th)) is in the range of 1V to 3V, allowing for efficient switching with low gate drive requirements.
5. Fast Switching Speed: The MOSFET exhibits high-speed switching capabilities, making it ideal for applications like DC-DC converters and motor drives.
6. Package: It is available in a compact TO-220 package, facilitating easy heat dissipation.
These features make the IRFH5250TRPBF suitable for applications in automotive, industrial, and consumer electronics.

Package

The IRFH5250TRPBF is packaged in a TO-220 form factor. This package type is commonly used for power MOSFETs, providing efficient thermal management and ease of mounting on heat sinks.

Pinout

The IRFH5250TRPBF is a N-channel MOSFET with a total of 8 pins. Its primary functions include acting as a switch or amplifier in various electronic circuits, particularly in power management applications. The pin configuration typically includes:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to the ground or the negative side of the power supply.
The arrangement allows for efficient control of high-current loads, making it suitable for applications like DC-DC converters, motor drivers, and power supplies. The IRFH5250TRPBF features a low on-resistance and fast switching capabilities, contributing to improved efficiency in electronic designs. Always refer to the specific datasheet for detailed electrical characteristics and pinout information.

Manufacturer

The manufacturer of the IRFH5250TRPBF is Infineon Technologies AG. Infineon is a global semiconductor manufacturer headquartered in Neubiberg, Germany. The company specializes in providing semiconductor and system solutions for various applications, including automotive, industrial, and consumer electronics. Infineon is known for its expertise in power semiconductors, microcontrollers, sensors, and security solutions, contributing to advancements in energy efficiency, mobility, and connectivity. The IRFH5250TRPBF is a part of their portfolio of power MOSFETs, designed for high-efficiency applications.

Application

The IRFH5250TRPBF is a N-channel MOSFET used in various applications, including:
1. Power management systems
2. DC-DC converters
3. Motor drives
4. High-speed switching applications
5. Load switching
6. Power amplifiers
Its high efficiency and low on-resistance make it suitable for automotive, industrial, and consumer electronics.

Equivalent

The IRFH5250TRPBF is a N-channel MOSFET known for its high efficiency and low RDS(on). Equivalent products include the AON7416, BSS140, and FQP30N06L. Ensure to check the datasheets for specifications like voltage, current ratings, and package type to confirm compatibility for your specific application.

出荷

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出荷料参照（DHL/FedEx）:

DHL の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は2〜5営業日です。

フェデックス: 配送費は25ドル〜40ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

UPS の: 配送費は25ドル〜45ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

TNT社: 配送費は25ドル〜65ドル（0.5kg）の範囲で、推定配送時間は3〜7営業日。

EMS: 配送料金は30〜50ドル（0.5kg）の範囲で、推定配送時間は7〜15営業日です。

登録航空郵便: 配送費は2〜4ドル（0.1kg）で、推定配送時間は5〜20営業日です。

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